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  • American Institute of Physics (AIP)  (24)
  • American Association for the Advancement of Science (AAAS)  (8)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 2696-2703 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: With the increasing popularity of the scanning tunneling microscope (STM) in surface science, many ideas for additional and new technical features have been proposed. The work herein contributes to this evolution with a special STM design. The STM described is part of an experimental apparatus for thin film growth investigations in ultrahigh vacuum. Besides the STM, the apparatus includes facilities for thermal desorption spectroscopy and Auger electron spectroscopy and a Kelvin probe for measuring dynamic work function changes. The Kelvin probe is optimized for gas adsorption experiments as well as for in situ film growth investigations during metal deposition. These added features combined with the STM and easy sample transfer yield a new powerful tool for in situ controlled preparation and extensive characterization of thin films. In the present work we describe the novel features of this STM and we demonstrate the efficiency of the whole system by giving a few representative results. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In the present work, we describe a new Kelvin probe for dynamical work function change (ΔΦ) measurements in ultrahigh vacuum. The construction of the Kelvin probe is especially optimized to meet the experimental conditions for gas-adsorption experiments as well as for in situfilm growth investigations during metal deposition. This is realized by a new setup which enables a change of the geometrical orientation of the vibrating reference electrode with respect to the sample surface. The Kelvin probe combined with thermal desorption spectroscopy, Auger electron spectroscopy, and scanning tunneling microscopy facilities, forms a powerful tool for film growth analysis. The performance of the instrumentation is demonstrated with some representative test experiments for copper deposition on Pt(111). © 1997 American Institute of Physics.
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  • 3
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
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  • 4
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrafast electromagnetic radiation induced by a femtosecond laser beam from a semiconductor provides determination of the impurity doping concentration, carrier mobility, sign, and strength of the depletion field near the semiconductor surface.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 268-270 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fermi level movements at Pt/GaAs and Ti/GaAs interfaces have been investigated using a direct measurement of Schottky barrier heights in a bimetal Schottky structure. Using thin interfacial layers, the Schottky barrier was smoothly varied from the characteristic value of the thick metal to that of the interfacial metal. The variation of barrier height versus the inner metal thickness was found to exhibit an exponential behavior extending over a few monolayers coverage. This experiment indicates a new approach to the fundamental study of metal-semiconductor interfaces and could be useful in device applications.
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 211-218 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report measurements of the absolute cross sections for the electron-impact ionization of SO2 from threshold to 200 eV. Absolute cross sections for the formation of the SO+2 parent ions and of the SO+, S+, O+, and O+2 fragment ions were obtained independently in two different laboratories using two different experimental techniques with uncertainties ranging from ±18% to ±25%. The level of agreement between the absolute cross sections (at 70 eV) obtained by the two techniques ranges from about 10% for SO+2 and SO+ to 20% for (S++O+2) and O+, which in all cases is well within the combined error margins of the two measurements. The high resolution capability of the mass spectrometer employed in one experiment enabled the separation of the S+ and O+2 fragment ions, which are separated by only 0.017 76 atomic mass units (amu), for the first time. The single positive ion formation is the dominant process for all observed product ions. The total single SO2 ionization cross section obtained by the two techniques agreed to within 8%. A comparison of the experimentally determined total SO2 single ionization cross sections with calculated cross sections based on a modified additivity rule revealed agreement to within 20%. © 1995 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 1170-1177 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We measured absolute partial cross sections for the formation of various singly charged and doubly charged positive ions produced by electron impact on SiF4 from threshold to 900 eV using a time-of-flight mass spectrometer. Dissociative ionization was found to be the dominant process, although we found evidence of the presence of the SiF4+ parent ion in our experiment. The SiF3+ fragment ion has the largest partial ionization cross section with a maximum value of 4.3×10−16 cm2 at 90 eV. All other singly charged fragment ion cross sections are about one order of magnitude smaller at this impact energy. The cross-section values of the doubly charged ions with the exception of SiF2++ are about two orders of magnitude smaller. A comparison is made with available previously measured data. Additional measurements using a sector-field mass spectrometer revealed that all fragment ions are formed with excess kinetic energy. The experimentally determined total single ionization cross section of SiF4 is compared with results of semiempirical and semiclassical calculations and reasonable agreement is found. © 2001 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 1020-1028 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have made a series of isotropic pressure-densified atactic poly(methyl methacrylate) (PMMA) glasses with densities ranging from 1.1823 g/cm3 to 1.1963 g/cm3, in order to investigate how the glassy dynamics, measured by Raman scattering in the frequency range of 0.1–10 THz, depends on the thermomechanical history of the glasses. In particular, we investigate whether there is a correlation between the strength of the fast relaxation dynamics and the free-volume characteristics, such as the average free-volume size and the free-volume fraction. The fast relaxation strength is deduced from the quasielastic light scattering (QES) intensity; the free-volume size is measured with positron annihilation lifetime spectroscopy (PALS); and the free-volume fraction is determined from pressure–volume–temperature (PVT) data and the Simha–Somcynsky equation-of-state (EOS) theory. Our temperature-dependent Raman and PALS measurements show that both the QES intensity and the ortho-positronium (o-Ps) lifetime increase smoothly with the temperature. On the other hand, the relaxation strength of the densified glasses at room temperature is, within experimental error, independent of the density, whereas both the o-Ps lifetime from PALS and the free volume fraction from the PVT data decrease significantly with pressure densification. We therefore conclude that the fast relaxation intensity cannot be explained on the basis of free-volume quantities, contrary to a recently suggested correlation between the QES intensity and the free volume [V. N. Novikov et al., J. Chem. Phys. 107, 1057 (1997)]. On the other hand, the observed behavior is consistent with another recently suggested model [V. N. Novikov, Phys. Rev. B 58, 8367 (1998)] which attributes the fast relaxations to vibration anharmonicity. Moreover, we show that the measured increase in the refractive index of the pressure-densified glasses fits the Lorentz–Lorenz equation and compares well to predictions of the relative change in refractive index with formation pressure from our own as well as published PVT data. © 2000 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1118-1120 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a reduction of inhomogeneous broadening in CdSe-related quantum wells in ZnSe by employing a growth technique that uses a CdS-compound source instead of the standard Cd elemental source for molecular-beam epitaxy. Assisted by the low sticking coefficient of sulfur and possibly an exchange reaction between S and Se, only a small S contamination is observed. A comparison with standard layers reveals an increase in quality and homogeneity by a strong reduction of the photoluminescence (PL) linewidth. Samples obtained by our method show extremely little lateral confinement as indicated by a lack of sharp single dot emission lines in micro PL and the absence of the extensive redshift observed in temperature dependent PL of fluctuating well potentials. © 2001 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1441-1443 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a new microfabrication technique for the construction of three-dimensional photonic crystals. In particular, we used multiple tilted x-ray lithography exposures in order to construct structures with photonic band gaps in the infrared region. First polymethylmethacrylate (PMMA) resist layers with a thickness of 500 μm were irradiated, then the holes in the resist structure were filled with preceramic polymer and subsequent pyrolysis converts the preceramic polymer into a SiCN ceramic. Theoretical results with fitted values of the dielectric constant are in good agreement with the transmission measurements. © 1997 American Institute of Physics.
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