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  • 1
    Monograph available for loan
    Monograph available for loan
    Berlin [u.a.] : Springer
    Call number: PIK N 454-96-0251
    Type of Medium: Monograph available for loan
    Pages: X, 368 S.
    ISBN: 3540609717
    Series Statement: Veröffentlichungen der Akademie für Technikfolgenabschätzung in Baden-Württemberg
    Location: A 18 - must be ordered
    Branch Library: PIK Library
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Discrete & computational geometry 22 (1999), S. 297-315 
    ISSN: 1432-0444
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science , Mathematics
    Notes: Abstract. We present an easy to survey constructive method using only basic mathematics which allows us to define a homeomorphism between any compact real algebraic variety and some components of the configuration space of a mechanical linkage. The aim is to imitate addition and multiplication in the framework of weighted graphs in the euclidean plane that permit a ``mechanical description'' of polynomial functions, and thus of varieties.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spontaneous nuclear spin ordering in the simple diamagnetic metals Cu and Ag has been studied by neutron diffraction using the spin dependent part of the nuclear cross section. Simple antiferromagnetic ordering of type I has been found in zero field for these fcc-systems below 60 and 560 pK for Cu and Ag, respectively. The ordering in an applied field has been investigated and the phase diagrams have been determined: a very complex phase diagram with different magnetic structures, strong hysteresis, and time dependence was found for Cu, while in Ag the phase diagram is very simple. Comparison with ab initio calculations allows a rather deep insight into the interactions leading to the ordering. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 286-288 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present quantitative measurements of the work function of semiconductor and metal surfaces prepared in ultrahigh vacuum (UHV) using a combination of UHV noncontact atomic force microscopy and Kelvin probe force microscopy. High energetic and lateral resolution is achieved by using the second resonance frequency of the cantilever to measure the electrostatic forces, while the first resonance frequency is used to simultaneously obtain topographic images by the frequency modulation technique. Spatially resolved work-function measurements reveal a reduced work function in the vicinity of steps on highly oriented pyrolytic graphite. On the GaAs(110) surface it could be demonstrated that defect states in the forbidden band gap cause a local pinning of the Fermi level along monolayer steps. On p-WSe2(0001) work-function variations due to the Coulomb potential of single dopant sites were resolved. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1099-1101 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of the ZnSe/CuGaSe2 heterointerface was studied by x-ray photoelectron spectroscopy (XPS). ZnSe was sequentially grown on CuGaSe2(001) epilayers. In situ photoemission spectra of the Ga 3d and Zn 3d core levels as well as XPS valence bands were acquired after each deposition step. The valence-band offset is determined to be ΔEV=0.6±0.1 eV. As a consequence, a nearly symmetric "type-I" band alignment for the ZnSe/CuGaSe2 heterojunction with a conduction-band offset of ΔEC=0.4±0.1 eV is found. Concerning the band alignment ZnSe can, therefore, be expected to be a suitable buffer material for CuGaSe2-based thin-film solar cells. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 692-694 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Directed semiconductor growth in nanoporous ceramic films is reported. A p-n heterojunction with an interface that is spatially distributed across the complete thickness of the ceramic film is established. The interface area is estimated to be several 100 times larger than its geometric projection. The p-n junction shows excellent rectification and may serve as the basic building block for photovoltaic devices. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2888-2890 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Admittance spectroscopy was measured on Cu(In,Ga)(S,Se)2 thin film and single crystal heterojunctions. The emission rates of defects for various near-stoichiometric compositions follow a Meyer–Neldel rule, showing increasing attempt-to-escape frequencies with increasing defect depth. Defects in highly (In,Ga)-rich material showed lower attempt-to-escape frequencies and follow a separate Meyer–Neldel relation. Repetitive air annealing of a CuInSe2 heterojunction revealed a shift of the depth and capture cross section of an observed defect. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1432-2099
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Physics
    Notes: Abstract A temporary increase in the incidence of infant leukaemia in Greece was reported by Petridou et al., which was attributed to in utero exposure to ionising radiation resulting from the Chernobyl accident. We performed a similar analysis based on the data of the German Childhood Cancer Registry in order to check whether the observation could be confirmed by means of independent data. Applying the same definitions as Petridou et al., we also observed an increased incidence of infant leukaemia in a cohort of children born after the Chernobyl accident. More detailed analyses, regarding areas with different contamination levels and dose rate gradients over time after the accident, showed, however, no clear trend with regard to exposure. It would therefore appear less likely that the observed effect was caused by exposure to ionising radiation due to the Chernobyl accident.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 62 (1996), S. 181-185 
    ISSN: 1432-0630
    Keywords: 72.70 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Heterojunctions, such as ZnO/CdS/CuGaSe2, were fabricated for photovoltaic applications. Optimization of device structures based on monocrystalline CuGaSe2 led to the highest-to-date power conversion efficiencies for CuGaSe2 solar cells. At room temperature under 100 mW/cm2 AM1.5 illumination a maximum cell efficiency of 9.7% was achieved, given by an open-circuit voltage of 946 mV, a short circuit current density of 15.5 mA/cm2, and a fill factor of 66.5%. Preparation and performance of the optimum device are described. Current voltage characteristics dependent on illumination intensity and temperature, spectral response and electron-beam-induced current measurements were performed to determine the device parameters as well as to analyse the current transport and loss mechanisms. Tunneling, assisted by defect levels in the CdS layer, seems to play a major role. High injection effects are observed at forward bias ofV 〉 0.5 V or an illumination level ofP 〉 10 mW/cm2. Under such conditions, as well as at low temperatures, the non-zero series resistance comes into play. Effects of the shunt resistance, however, are negligible in all cases.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 62 (1996), S. 181-185 
    ISSN: 1432-0630
    Keywords: PACS: 72.70; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Heterojunctions, such as ZnO/CdS/CuGaSe2, were fabricated for photovoltaic applications. Optimization of device structures based on monocrystalline CuGaSe2 led to the highest-to-date power conversion efficiencies for CuGaSe2 solar cells. At room temperature under 100 mW/cm2 AM1.5 illumination a maximum cell efficiency of 9.7% was achieved, given by an open-circuit voltage of 946 mV, a short circuit current density of 15.5 mA/cm2, and a fill factor of 66.5%. Preparation and performance of the optimum device are described. Current voltage characteristics dependent on illumination intensity and temperature, spectral response and electron-beam-induced current measurements were performed to determine the device parameters as well as to analyse the current transport and loss mechanisms. Tunneling, assisted by defect levels in the CdS layer, seems to play a major role. High injection effects are observed at forward bias of V〉0.5 V or an illumination level of P〉10 mW/cm2. Under such conditions, as well as at low temperatures, the non-zero series resistance comes into play. Effects of the shunt resistance, however, are negligible in all cases.
    Type of Medium: Electronic Resource
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