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  • 1
    Electronic Resource
    Electronic Resource
    Space-resolved measurement of internal magnetic field in a bumpy torus by Li0-beam probe spectroscopy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 857-859 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new method combining Li0-beam probing and spectroscopic techniques has been developed to measure local magnetic fields in a bumpy torus. A collimated thermal Li0 beam is injected into the plasma. The Zeeman pattern of the lithium resonance radiation (22S–22P, 6708 A(ring)) is observed with a Fabry–Perot interferometer. The strength of the local magnetic field is determined from the splitting between two π components of the 22S1/2–22P1/2 transition with the spatial resolution of about 7 mm. The magnetic fields from 2 to 4 kG were measured with accuracy of ±2%. This method is applicable to plasmas of a line-integrated electron density below 5×1012 cm−2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138072
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  • 2
    Electronic Resource
    Electronic Resource
    Annealing effects for implanted Y-Ba-Cu-O superconductors (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 936-938 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Annealing effects of Y-Ba-Cu-O superconductor thin films implanted by 200-keV Ne+ have been investigated. Transition temperature (Tc) end points for 0, 1×1014, 1×1015, and 1×1016 ions/cm2 doses are 75, 71, 62, and 16 K, respectively. The film implanted at 1×1017 ions/cm2 dose indicates nonsuperconductors. The c-lattice constant increases were observed for the implanted films. It is confirmed that the superconducting characteristics for film, which is implanted at 1×1016 ions/cm2 dose, are recovered by annealing in O2 atmosphere at 940 °C for 4 h. Moreover, microcrystal growth caused by annealing the implanted film was observed on the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341897
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  • 3
    Electronic Resource
    Electronic Resource
    Measurements of NBI and ion cyclotron range of frequency power deposition profiles using charge exchange spectroscopy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 1503-1505 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Power deposition profiles of a heating neutral beam and/or an ion cyclotron range of frequency (ICRF) heating have been measured on the JIPP T-IIU tokamak. The deposition is obtained from the rise time of the ion temperature, which is measured from the Doppler broadening of C vi emission produced by charge exchange reaction between a neutral beam and a carbon impurity. The power deposition of ICRF has been found to be flatter than that of neutral beam injection (NBI). The thermal diffusivities are 4–5 times larger than the neoclassical values both in NBI and NBI+ICRF cases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140177
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  • 4
    Electronic Resource
    Electronic Resource
    Preparation of Bi-Sr-Ca-Cu-O thin film by coevaporation and its thermal stability (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 572-574 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin film with a high Tc single phase was prepared on a (100)MgO substrate at a substrate temperature of about 620 °C by coevaporation of Bi2O3, Sr, Ca, and Cu metal. The resistive superconducting transition with onset Tc of 80 K was observed for this film. By post-deposition annealing at 850 °C, the high Tc phase was transformed into a low Tc phase, while films annealed at a higher temperature such as 890 °C maintained the high Tc phase. These results indicated that the high Tc phase can exist only at the high-temperature region (∼890 °C) while the stable phase existing at the low-temperature region (∼850 °C) is the low Tc phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101460
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  • 5
    Electronic Resource
    Electronic Resource
    Epitaxial film growths of artificial (Bi-O)/(Sr-Ca-Cu-O) layered structures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2364-2366 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial film growth of artificial (Bi-O)/(Sr-Ca-Cu-O) layered structures on MgO substrates was carried out using reactive-oxygen-gas dual ion beam sputtering and shuttering technique. A 12 A(ring) Sr-Ca-Cu-O buffer layer seems suitable for perfect epitaxial film growth. Single-phase films having periodicities of 12, 15, and 18 A(ring) (which correspond to bulk 24, 30, and 36 A(ring) phases in Bi oxide superconductors) were selectively grown by adjusting the thickness of a Sr-Ca-Cu-O layer sandwiched by Bi-O bi-planes. A high Tc phase film with a total thickness of about 300 A(ring) showed an onset Tc of 110 K and a zero resistivity temperature of 45 K without post-deposition annealing. The shuttering technique seems to enable the layer-by-layer film growth, and it is very effective for the formation of smooth and perfect epitaxial structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101529
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  • 6
    Electronic Resource
    Electronic Resource
    Development of Li beam probing and laser-induced fluorescence technique for electric field measurement in a plasma (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 2351-2356 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: To measure local electric field in an rf-plugged sheet plasma in the RFC-XX-M open-ended machine, a spectroscopic system using a combined technique of Li-beam probing (laser blow-off method) and laser-induced fluorescence has been developed. A Li atom in the rf field can be populated to 42F by a stepwise laser pumping (22S→22P→42F) because of the Stark mixing between 42F and 42D. A cascade fluorescence of 610.4 nm (32D→22P) subsequent to the direct transition (42F→32D) was observed to estimate the rf field strength (rms) Erms. To correct the effect of electron collisions in the plasma, we observed a blue fluorescence consisting of two lines: a forbidden line of 460.2 nm (42F→22P) and an allowed line of 460.3 nm (42D→22P) induced by electron collisional transfer (42F→42D). From these intensities, we obtained Erms and electron density ne by solving numerically the rate equations, including the relevant radiative and collisional processes under the experimental conditions. Erms and ne were estimated to be 2.4 kV/cm and 3.1×1011 cm−3 near the center of the sheet plasma, respectively. It was found that the obtained Erms was enhanced by about 2.5 times with respect to the vacuum field (1 kV/cm). The obtained ne agreed well with ones by other methods. A spatial distribution of ne was also obtained from that of the Li0 resonance line (22P→22S) due to electron impact excitation. The present spectroscopic system is applicable to plasmas of ne(approximately-less-than)1013 cm−3 and static or quasi-static electric fields of E(approximately-greater-than)400 V/cm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139960
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  • 7
    Electronic Resource
    Electronic Resource
    A plane-grating monochromator for radiometric calibration : INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2089-2092 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new plane-grating monochromator and calibration chamber were constructed for the radiometric calibration of plasma diagnostic devices. The monochromator is designed to cover a wavelength range of 1.8–238 nm with moderate resolving power of 500±200 in λ/Δλ. To check the performance of the monochromator, spectral distribution and resolution were measured by experiments on photoemission from solids and photoionization of rare gases. The characterization of multilayer reflectors by the use of this beamline is demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140833
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  • 8
    Electronic Resource
    Electronic Resource
    Neutral beam probe spectroscopy for the measurement of local plasma density fluctuations (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 151-154 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A neutral Li beam probing combined with a spectroscopic technique to measure local electron-density fluctuations is experimentally demonstrated in an ECR test plasma. The density fluctuations of up to 180 kHz are excited and controlled by applying periodic bursts of sinusoidal waves to a grid. The electron-density fluctuation levels thus obtained are found to agree well with those measured with a Langmuir probe. It is also suggested that this method can be applied to plasmas whose densities are in a wide range of 1010–1013 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138959
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  • 9
    Electronic Resource
    Electronic Resource
    Measurement of electron density with combined technique of laser blowoff and laser-induced fluorescence (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 1036-1037 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A method combining the techniques of laser blowoff and laser-induced fluorescence has been developed in order to measure the local electron density below 1013 cm−3. Characteristics of a Li0 beam produced by laser blowoff of a thin Li film are investigated using beam–plasma interactions and laser-induced fluorescence. Such a beam has a near-Maxwellian velocity distribution with a temperature around 4.5 eV and a density of the order of 1010 cm−3 at a distance of about 1 m from the film target. The feasibility of measuring electron density with this Li0 beam and a dye laser is demonstrated with an ECR plasma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138260
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  • 10
    Electronic Resource
    Electronic Resource
    Preferentially oriented epitaxial Y-Ba-Cu-O films prepared by the ion beam sputtering method (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1292-1295 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Preferentially oriented epitaxial Y-Ba-Cu-O films were prepared on (100) SrTiO3 substrates by oxygen reactive ion beam sputtering. The epitaxial orientations were varied by controlling both substrate temperature and oxygen parital pressure. c-axis oriented films tended to be formed at higher substrate temperatures (〉620 °C) and lower oxygen pressures (〈3×10−3 Torr). In contrast, a/c- and a-axis oriented films were formed at lower substrate temperatures (〈600 °C) and higher oxygen pressures (〉3×10−3 Torr). The best Tc (end) of 82 K was observed in one of the c-axis oriented film without post-annealing. The tendency for preferential orientation can be well understood in terms of the lattice mismatch between the substrate and the film, the lattice constants of which depend on oxygen deficiency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341848
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