ISSN:
1573-9228
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Conclusions Crystallization from a solution of antimony in a gallium-aluminum melt has been used to produce epitaxial AlxGa1−xSb films with x=0 to 0.4; isothermal (T = 450, 500, 550°C) and isoconcentration (0; 1; 2.4 at. % Al) sections have been drawn for the liquidus surface on the composition plane. X-ray microspectral analysis has been used to examine the composition of the AlxGa1−xSb films in relation to aluminum content in the melt, as well as the distribution of Al and Ga over the epitaxial film. These films had a perfect structure. The results enable one to determine the solution composition needed to grow AlxGa1−xSb epitaxial films at 450–550°C on gallium antimonide substrates, and it is shown to be possible to make heterostructures in the AlxGa1−xSb-GaSb system.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00890910
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