ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract The dislocation arrangements produced around microhardness indentations made in silicon at room temperature have been studied by transmission electron microscopy. Loops consisting of 30°- and 60°-dislocations are produced and move on the {111} planes. It is suggested that, during indentation, the theoretical shear strength is exceeded locally and that the observed dislocations arise as a result of the accommodation of the displacements due to block slip. On annealing up to 1030° C the loops do not appear to be mobile, rather new loops consisting of edge and screw components are formed which can move large distances.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00540753
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