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  • Chemistry  (3)
  • Ion implantation  (2)
  • Organic Chemistry
  • (Sea cucumber)
  • 1995-1999  (1)
  • 1970-1974  (4)
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Keywords
Publisher
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Damage dependent electrical activation of boron implanted silicon (1974)
    Springer
    Applied physics 3 (1974), S. 321-324 
    Details
    ISSN: 1432-0630
    Keywords: Ion implantation ; Profiles ; Damage
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The important role of damage dependent electrical activation in the case of boron implanted silicon layers is whown by comparing measured acceptor concentration profiles in differently amorphized silicon layers. It is shown that the amorphous layer is completely recrystallized after a 650° C anneal for 10 min and the implanted boron is electrically active. In the heavily damaged but not amorphous region underneath the amorphous layer the implanted boron is hardly electrically active after this temperature treatment. At higher annealing temperatures the electrical activity increases, but 900° C are required for complete activation of the implanted boron. These results indicate that the process to activate the implanted boron electrically is strongly damage dependent. We thus found a new contribution to the understanding of the annealing behavior of implanted layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00887282
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical and backscattering measurements of arsenic implanted silicon (1974)
    Springer
    Applied physics 4 (1974), S. 115-123 
    Details
    ISSN: 1432-0630
    Keywords: Ion implantation ; Backscattering ; Profiles
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of doping concentration and mobility of arsenic implanted silicon at high energies and at low energies with following drive-in diffusion are presented. The electrical measurements are compared with and supported by backscattering measurements. Tails which are present after short time anneals vanish during drive-in diffusion. A temperature of at least 825°C is required to fully activate the arsenic and to obtain the same mobility as in diffused samples. Backscattering data reveal an anomaly in the annealing behavior of the damage. After prolonged annealing As shows some accumulation at the surface. For drive-in diffusions lattice location experiments were performed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00884266
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  • 3
    Electronic Resource
    Electronic Resource
    Eine einfache Methode zum Nachweis löslicher dimethylsilikonhaltiger Verarbeitungshilfsmittel (1972)
    Weinheim : Wiley-Blackwell
    Materialwissenschaft und Werkstofftechnik 3 (1972), S. 263-264 
    Details
    ISSN: 0933-5137
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Description / Table of Contents: A simple Method for the Detection of soluble Auxiliary Agents containing Dimethylsilicone. Rapid detection of soluble dimethyl silicone compounds, occurring as residues of auxiliary agents or finishes on the surface of hardware, which in special cases may cause hazardous effects, can be achieved by a simple test. Since silicone compounds decrease the surface tension of trichloro-ethylene (TRI), shaking of such solutions produces foam. The stability of the foam depends on the silicone concentration from 10 μg silicone per ml TRI (detection limit) up to about 100 mg/ml TRI (saturation).
    Notes: Zum schnellen Nachweis löslicher Dimethylsilikonverbindungen, die auf Oberflächen von Bauteilen z. B. als Reste von Verarbeitungshilfsmitteln oder als Bestandteile von Lacken in bestimmten Fällen Ursache unerwünschter Effekte sein können, hat sich ein sog. „TRI-Schütteltest“ bewährt. Silikonverbindungen setzen die Oberflächenspannung von Trichloräthylen (TRI) herab, so daß beim Schütteln Schaum entsteht. Die Beständigkeit des Schaumes ist ein Maß für den Silikongehalt der Lösung zwischen 10 μg Silikon/ml TRI (Nachweisgrenze) und etwa 100 mg/ml TRI (Sättigung).
    Additional Material: 1 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/mawe.19720030509
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  • 4
    Electronic Resource
    Electronic Resource
    Die Kristallstruktur von tert-Butylimidomethylindan, [CH3In—NC(CH3)3]4 (1997)
    Weinheim : Wiley-Blackwell
    Zeitschrift für anorganische Chemie 623 (1997), S. 1499-1500 
    Details
    ISSN: 0044-2313
    Keywords: Methylindium Compound ; Heterocubane ; Synthesis ; X-ray Structure ; Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: The X-Ray Structure Determination of tert-Butylimido Methylindane, [CH3In—NC(CH3)3]4The reaction of MeInCl2 with LiN(H)tBu in a 1 : 2 molar ratio forms [MeIn—NtBu]4 in high yield, lithium chloride, and the free amine H2NtBu. The crystal structure of the imidomethylindane with a cubic In4N4 skeleton has been determined.
    Additional Material: 1 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/zaac.19976231004
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  • 5
    Electronic Resource
    Electronic Resource
    Uber einige Azide des Berylliums, Magnesiums, Bors und Aluminiums (Zur Reaktion von Silylaziden mit Elementhalogeniden) (1972)
    Weinheim : Wiley-Blackwell
    Zeitschrift für anorganische Chemie 394 (1972), S. 197-208 
    Details
    ISSN: 0044-2313
    Keywords: Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Beryllium dichloride, magnesium dihalide (hal = Cl, Br, J), boron trihalide (hal = F, Cl, Br) and aluminium trichloride are transformed by trimethylsilyl azide in methylen chloride and ether, respectively, to dimer beryllium chloride azide etherate, polymer beryllium diazide, polymer magnesium halide azide, trimer boron dihalide azide, monomer (in CH3Cl2) aluminium dichloride azide and polymer aluminium chloride diazide, respectively. Magnesium diazide and aluminium triazide are formed by azidation of magnesium diiodide and aluminium trichloride only in connection with magnesium iodide azide and aluminium chloride diazide, respectively. Unlike the covalent azides of beryllium, boron and (possibly) aluminium with α-azido brigdes, the azides of magnesium contain azide ions.
    Notes: Berylliumdichlorid, Magnesiumdihalogenid (Hal = Cl, Br, J), Bortrihalogenid (Hal = F, Cl, Br) bzw. Aluminiumtrichlorid lassen sich mit Trimethylsilylazid in Methylenchlorid bzw. Äther in dimeres Berylliumchloridazid-Ätherat, polymeres Berylliumdiazid, polymeres Magnesiumhalogenidazid, trimeres Bordihalogenidazid, monomeres (in CH2Cl2) Aluminiumdichloridazid bzw. polymeres Aluminiumchloriddiazid überführen. Magnesiumdiazid bzw. Aluminiumtriazid bilden sich durch Azidierung von Magnesiumdijodid bzw. Aluminiumtrichlorid nur im Gemisch mit Magnesiumjodidazid bzw. Aluminiumchloriddiazid. Zum Unterschied von den kovalent gebauten Aziden des Berylliums, Bors und (möglicherweise) Aluminiums mit α-Azidbrücken, enthalten die Azide des Magnesiums ionogen gebundenes Azid.
    Additional Material: 2 Tab.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/zaac.19723940123
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