ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Precipitates of a second phase in P-diffused (111) and (110) silicon wafers were revealed by X-ray topography and studied by transmission electron microscopy. The structural data derived from the analysis of the images and the corresponding diffraction patterns resulted in agreement with the ones recently reported by Wadsten, in his X-ray study on synthetic SiP single crystals. Therefore the precipitates were assigned a SiP base-centred orthorhombic structure with a=3.51 Å, b=20.59 Å and c=13.60 Å. The sign of the calculated values of the misfit parameters between the two phases and the morphology of the precipitates were related to the tensile stress induced by the phosphorus diffusion into silicon.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00540355
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