ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
  • 1
    facet.materialart.
    Unbekannt
    Semiconductors. Toward functional spintronics (2001)
    American Association for the Advancement of Science (AAAS)
    Details
    Publikationsdatum: 2001-02-28
    Beschreibung: 〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Ohno, H -- New York, N.Y. -- Science. 2001 Feb 2;291(5505):840-1.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Sendai, Japan.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/11225634" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Digitale ISSN: 1095-9203
    Thema: Biologie , Chemie und Pharmazie , Informatik , Medizin , Allgemeine Naturwissenschaft , Physik
    Publiziert von American Association for the Advancement of Science (AAAS)
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    AKTUELLE ARTIKEL
  • 2
    facet.materialart.
    Unbekannt
    Zener model description of ferromagnetism in zinc-blende magnetic semiconductors (2000)
    American Association for the Advancement of Science (AAAS)
    Details
    Publikationsdatum: 2000-02-11
    Beschreibung: Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Dietl -- Ohno -- Matsukura -- Cibert -- Ferrand -- New York, N.Y. -- Science. 2000 Feb 11;287(5455):1019-22.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Sendai 980-8577, Japan. Institute of Physics and College of Science, Polish Academy of Sciences, al. Lotnikow 32/46, PL-02668 Warsaw, Poland. Laboratoire de Spectr.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/10669409" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Digitale ISSN: 1095-9203
    Thema: Biologie , Chemie und Pharmazie , Informatik , Medizin , Allgemeine Naturwissenschaft , Physik
    Publiziert von American Association for the Advancement of Science (AAAS)
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    AKTUELLE ARTIKEL
  • 3
    facet.materialart.
    Unbekannt
    Electrical manipulation of magnetization reversal in a ferromagnetic semiconductor (2003)
    American Association for the Advancement of Science (AAAS)
    Details
    Publikationsdatum: 2003-07-12
    Beschreibung: We report electrical manipulation of magnetization processes in a ferromagnetic semiconductor, in which low-density carriers are responsible for the ferromagnetic interaction. The coercive force HC at which magnetization reversal occurs can be manipulated by modifying the carrier density through application of electric fields in a gated structure. Electrically assisted magnetization reversal, as well as electrical demagnetization, has been demonstrated through the effect. This electrical manipulation offers a functionality not previously accessible in magnetic materials and may become useful for reversing magnetization of nanoscale bits for ultrahigh-density information storage.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Chiba, D -- Yamanouchi, M -- Matsukura, F -- Ohno, H -- New York, N.Y. -- Science. 2003 Aug 15;301(5635):943-5. Epub 2003 Jul 10.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/12855816" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Digitale ISSN: 1095-9203
    Thema: Biologie , Chemie und Pharmazie , Informatik , Medizin , Allgemeine Naturwissenschaft , Physik
    Publiziert von American Association for the Advancement of Science (AAAS)
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    AKTUELLE ARTIKEL
  • 4
    Digitale Medien
    Digitale Medien
    Magnetotransport properties of (Ga, Mn)Sb (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6442-6444 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The preparation of dilute alloy of GaSb and Mn, (Ga, Mn)Sb, with a few percent of Mn by molecular beam epitaxy and its magnetotransport properties are reported. Magnetotransport measurements show a pronounced anomalous Hall effect and negative magnetoresistance below 50 K. The results suggest that Mn atoms are incorporated in the GaSb host, resulting in the formation of the ferromagnetic semiconductor, (Ga, Mn)Sb. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.372732
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 5
    Digitale Medien
    Digitale Medien
    Ultrafast deposition of microcrystalline Si by thermal plasma chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 8311-8315 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This research is an attempt to apply thermal plasma chemical vapor deposition for the ultrafast deposition of Si films for solar cells. The improvement of stability, controllability, and cleanliness of the process enabled the deposition of μc-Si films at the ultrafast rate of over 1000 nm/s. Moreover, a minimum defect density of 7.2×1016 cm−3 was achieved. Monte-Carlo simulation and step coverage analysis suggested that the precursor is an approximately 1 nm cluster with a sticking probability of about 0.6. The success of this research may change the established concepts of Si deposition technology. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1370365
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 6
    Digitale Medien
    Digitale Medien
    Growth and properties of (Ga,Mn)As films with high Mn concentration (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7024-7026 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: (Ga, Mn)As films with high nominal Mn concentration (0〈x〈0.55) are grown by low temperature molecular beam epitaxy (LT-MBE), growth temperature Ts=180 °C. Reflection high energy electron diffraction patterns indicate epitaxial growth of (Ga, Mn)As for x〈0.1, whereas they show spotty patterns for x〉0.1, which turn to polycrystalline features when x〉0.3. X-ray diffraction shows the formation of MnAs together with the growth of (Ga, Mn)As. The lattice constant of the layers suggests that (Ga, Mn)As with high Mn composition as high as 17% can be grown by LT-MBE. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1357841
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 7
    Digitale Medien
    Digitale Medien
    Spin-dependent scattering in semiconducting ferromagnetic (Ga,Mn)As trilayer structures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6436-6438 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The spin-dependent scattering in ferromagnet/nonmagnet/ferromagnet (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As trilayer structures was studied. An increase of sheet resistance was observed when the magnetizations of the two ferromagnetic (Ga,Mn)As layers were aligned anti-parallel, which was realized by the different coercivity of the two (Ga,Mn)As layers with different compositions. This is the first demonstration of spin-dependent scattering in magnetic multilayer structures made of semiconductor-materials alone. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.372730
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 8
    Digitale Medien
    Digitale Medien
    Structure of elasnin, a novel elastase inhibitor (1979)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 101 (1979), S. 4386-4388 
    Details
    ISSN: 1520-5126
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/ja00509a063
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 9
    Digitale Medien
    Digitale Medien
    Room-temperature ferromagnetism in zincblende CrSb grown by molecular-beam epitaxy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2776-2778 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thin films of CrSb grown by solid-source molecular-beam epitaxy on GaAs, (Al, Ga)Sb, and GaSb are found to exhibit ferromagnetism. Reflection high-energy electron diffraction and high-resolution cross sectional transmission electron microscopy both indicate that the structure is zincblende. Temperature dependence of remanent magnetization shows that the ferromagnetic transition temperature is beyond 400 K. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1413732
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 10
    Digitale Medien
    Digitale Medien
    Emission wavelength control by potential notch in type-II InAs/GaSb/AlSb intersubband light-emitting structures (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 4148-4150 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A potential notch in the well region is used to control the emission wavelength of type-II InAs/GaSb/AlSb intersubband light-emitting structures. Intersubband absorption measurements are performed to evaluate the subband structure of the active layers and are compared with theory. Type-II quantum cascade structures using these active layers are fabricated and midinfrared intersubband electroluminescence is observed. Calculation indicates that the active layer structure can emit electromagnetic waves in the THz region without employing a wide alloy well. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1381034
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...