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  • 1980-1984  (2)
  • 1
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    Effect of impurities and processing on silicon solar cells. Volume 1: Characterization methods for impurities in silicon and impurity effects data base (1980)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. Discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, conventional solar cell I-V techniques, and descriptions of silicon chemical analysis are presented and discussed. The tabulated data include lists of impurity segregation coefficients, ingot impurity analyses and estimated concentrations, typical deep level impurity spectra, photoconductive and open circuit decay lifetimes for individual metal-doped ingots, and a complete tabulation of the cell I-V characteristics of nearly 200 ingots.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA-CR-162627 , DOE/JPL-954331-80/9 , JPL-9950-299 , QR-17
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 2
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    Development of an 1100 deg F capacitor (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: The feasibility of developing a high temperature capacitor for 1100 F operation which is as small and light as conventional capacitors for normal operating temperatures is discussed. Pyrolyic boron nitride (PBN) was selected for the dielectric. The PBN capacitors were made by slicing and lapping material from thick blocks and then sputtering thin film electrodes. These capacitors had breakdown strengths of 7,000 volts per mil and a dissipation factor of less than 0.001 at 1100 F. Additional processing improvements were made after testing a multi-layer or stacked PBN capacitor for 1,000 hours at 1100 F. Sputter etching the wafers before depositing electrodes resulted in a reduction in dissipation factor. A sputtered boron nitride film applied to the outer electrode surfaces produced a more stable capacitor. A design for a 0.1 mu F capacitor and a summary of PBN wafer fabrication costs are given.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Lewis Research Center Proc. of the Conf. on High-Temp. Electron.; p 25-28
    Format: application/pdf
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    NASA TECHNICAL REPORTS
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