ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract This paper reports the analysis of lattice defects induced in silicon by phosphorus predeposition carried out at 920, 1000 and 1100° C through a polycrystalline silicon layer. The corresponding results obtained on bare wafers are also represented for comparison. From transmission electron microscopy it was found that the precipitation of phosphorus, when it occurs, is confined within the polysilicon film, keeping the substrate free from this type of defect, even for very long predeposition times. In addition, X-ray topography showed that extrinsic stacking faults and dislocations were absent, although these are commonly observed when the doping process is performed under the same conditions on a bare single crystal. This behaviour suggests that the polysilicon layer acts as a sink for the excess interstitials induced by the in-going phosphorus atoms. The resulting improvement of lattice perfection should allow fabrication of devices with better electrical performances.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00551800
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