ISSN:
1432-0630
Keywords:
73.60.Fw
;
81.15.Ef
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The presence of parts per million (ppm) levels of impurities in the low-temperature arsenic charge used in molecular beam epitaxy (MBE) is shown to have a dramatic effect on the quality of GaAs grown. Source charge impurities play a vital role in determining the apparent variation in reported doping behaviour in MBE:GaAs.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00620633
Permalink