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  • Cambridge University Press  (67)
  • American Institute of Physics (AIP)  (40)
  • 1985-1989  (68)
  • 1980-1984  (26)
  • 1965-1969  (13)
  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3277-3281 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We point out that the creation of a soliton pulse train in a nonlinear-dispersive system can be used for the generation of high-power microwave bursts. A modulated transmission line with an appropriate nonlinear dielectric is proposed. The nonlinear wave evolution is analyzed and requirements for the dielectric material are found. Problems associated with the material are discussed. Low-power experimental demonstrations of these concepts are presented.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 761-765 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An electron channeling study has been done on large grained YBa2Cu3Ox samples. Selected area channeling patterns (SACP) were used to examine several dozen grains on electropolished surfaces and it was demonstrated that (a) the twin planes observed in polarized optical light microscopy lie parallel to {110} crystal planes, and (b) the long flat sides of high aspect ratio grains are formed by basal planes, and the shorter sides are formed by either (010), (100), or {110} planes. A majority of the large grains examined were found to contain subgrains, misaligned by 0.5°–1° and ranging in size from less than 3 to 20 μm. The origin of the subgrains is not understood.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Diffusion of Si into quantum-well heterostructures and superlattices employing the high gap III-V quaternary system Iny (AlxGa1−x )1−yP is shown to result in impurity-induced layer disordering. Secondary ion mass spectroscopy, transmission electron microscopy, and photoluminescence data indicate that the diffusion of Si into an InAlP-InGaP superlattice grown lattice matched on GaAs (y≈0.5) results in the intermixing of the layers, thus forming an alloy of average composition. Buried-heterostructure lasers are fabricated using Si layer disordering of In0.5 (Alx Ga1−x )0.5 P p-n quantum-well heterostructures. The disorder-defined stripe-geometry diode lasers operate pulsed at 300 K near 6400 A(ring). Continuous wave operation at λ∼6255 A(ring) is achieved at −47 °C.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1838-1844 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Data are presented and a model describing the diffusion of the donor Si in GaAs from grown-in dopant sources. In addition, the effects of background impurities on Si diffusion and layer interdiffusion in AlxGa1−xAs-GaAs superlattices are described. These results are obtained on epitaxial GaAs samples with alternating doped and undoped layers and on AlxGa1−xAs-GaAs superlattices with doped (Si or Mg) layers. The layer-doped GaAs and the AlxGa1−xAs-GaAs superlattices have been grown using metalorganic chemical vapor deposition and are characterized using secondary ion mass spectroscopy and transmission electron microscopy. Different annealing conditions are used to study the interaction between the grown-in impurities and the native defects of the crystal controlling the diffusion processes. The model describing the impurity diffusion and layer (Al-Ga) interdiffusion is based on the behavior of column III vacancies, VIII, and column III interstitials, IIII, and the control of their concentration by the position of the crystal Fermi level and the crystal stoichiometry. Experimental data show that n-type AlxGa1−xAs-GaAs superlattices undergo enhanced layer interdiffusion because of increased solubility of the VIII defect, while enhanced layer interdiffusion in p-type superlattices is caused by an enhanced solubility of IIII. The model employed is consistent with the experimental data and with the data of previous work.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3815-3819 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A three-dimensional formalism has been developed that can be used to compute the anhysteretic magnetization of anisotropic materials. The formalism represents a statistically based mean-field model in which the material is characterized as an ensemble of pseudodomains. The magnetization of the ensemble is obtained using a Maxwell–Boltzmann distribution with an energy dependence that includes both interactive and anisotropic terms. The model is applied to a single crystal of cobalt and excellent agreement with experimental data is obtained.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5821-5825 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Data are presented showing that donor diffusion and Alx Ga1−x As-GaAs layer intermixing are greatly enhanced in the presence of defects created by crystal overgrowth on locally laser-melted substrates. Accelerated defect and impurity-induced layer disordering, and donor diffusion from a solid source (SiO2 ), a vapor source (Ge), and from a grown-in source (Se) are observed in regions of high defect density. The enhanced donor diffusion and crystal self-diffusion are attributed to an increased density of column-III defects and dislocations in the crystal.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6836-6838 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We present experimental and numerical evidence of temporal contraction of electromagnetic pulses propagating in nonuniform, nonlinear dispersive transmission lines. The pulses are both contracted and amplified by orders of magnitude.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2763-2770 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have designed, built, and tested a pulsed gas-injection coaxial plasma gun driven by a 72-μF capacitor bank, with operating voltages of 60–80 kV (stored energy 130–230 kJ), and 1.6-MA, 1-μs rise-time current discharges. Using deuterium gas, we have obtained reliable delivery of all current to the gas and neutron yields of greater than 109. Current, voltage, inductance, and current position data are discussed and are compared with circuit solver models. Magnetic-probe and filtered scintillator photomultiplier detector array data on high-energy photon spectra were taken. A second puff-gas valve near the anode (inner electrode) axis at the muzzle end substantially improved the neutron yield.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2091-2097 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Reflection coefficients and complete angular distributions have been measured at angles of incidence between normal and near grazing for thermal beams of RbI molecules which were scattered from clean and beam-covered NaCl (100) surfaces. For fixed angles of incidence and scattering the intensity of scattered molecules was measured as a function of coverage of RbI on the sodium chloride surfaces. Dynamics of the gas-surface interactions are discussed and a mechanism for condensation of RbI is proposed.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 10
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 6642-6646 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: We have studied the origin and decay dynamics of triplet excitons in the conjugated polymer poly(4BCMU) in its sol(yellow) and gel(red) phases. Wavelength and intensity dependencies of the triplet yield show that the triplet exciton cannot be produced by excitation into the singlet exciton edge but only from higher lying states. The observed lifetime of the triplet state, coupled with the magnetic field dependence of the triplet state production and decay, indicate that the triplet state is created by a fission process from the excited singlet. The time and magnetic field dependence of the triplet exciton decay indicate that the triplet exciton decay in the red phase occurs by diffusive bimolecular fusion, but in the yellow phase the triplet exciton decay is nondiffusive. We postulate that the unimolecular decay of the triplet exciton in the yellow phase results from exciton pinning by conformational disorder.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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