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  • 1
    Electronic Resource
    Electronic Resource
    Crystal structure analysis of Ca4YFe5O13 by combining 1 MeV high-resolution electron microscopy with convergent-beam electron diffraction (1981)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 37 (1981), S. 723-728 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: By combining 1 MeV high-voltage-high-resolution electron microscopy with convergent-beam electron diffraction (CBED), the crystal structure of a perovskite-related compound, Ca4YFe5O13, is determined. The crystal has orthorhombic symmetry with lattice parameters a = 5.46, b = 37.4 and c = 5.54 Å. The space group is determined to be centrosymmetric Pnma by selecting the point group from the CBED patterns. The structure images taken from two principle-axis directions, which are interpreted on the basis of the calculated images, reveal that the structure consists of a succession of the stacking of FeO6 octahedra (O layer) and FeO4 tetrahedra (T layer) and is represented by the stacking sequence of ...OTOOTOTOOTO... along the b axis repeated at intervals of 37.4 Å. It is shown that the Ca4YFe5O13 crystal structure can be described in terms of unit-cell-level twinning of Ca2Fe2O5.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0567739481001605
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  • 2
    Electronic Resource
    Electronic Resource
    Combination of convergent-beam electron diffraction and 1 MeV structure imaging in a structure determination of Na2Ti9O19 (1982)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 38 (1982), S. 211-214 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The space group and atom configuration of monoclinic Na2Ti9O19 have been studied by combining 1 MeV high-resolution electron microscope imaging with the convergent-beam electron diffraction (CBED) technique. The crystal has monoclinic symmetry with lattice parameters a = 12.2, b= 3.78, c = 15.6 Å and β= 105°. The space group was determined uniquely to be centrosymmetric C2/m by selecting the point group from the symmetry of the CBED pattern. On the basis of the 1 MeV structure-image observation reported previously and the space-group determination, the crystal structure of monoclinic Na2Ti9O19 is proposed and atom coordinates are given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0567739482000473
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  • 3
    Electronic Resource
    Electronic Resource
    Atomic layer growth of oxide thin films with perovskite-type structure by reactive evaporation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2840-2845 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of BaTiO3 and SrTiO3 films by the reactive evaporation method was investigated using reflection high-energy electron diffraction (RHEED). The investigations were carried out using two growth methods: coevaporation and alternate evaporation of the metal elements in an oxygen atmosphere. Atomic layer growth was achieved by the alternate supply of Ba or Sr and Ti on the growing surface. In the case of coevaporation, epitaxial growth occurred in a two-dimensional unit-cell-by-unit-cell mode. The surface of each unit cell is terminated by a (TiO2) layer. Artificial superlattices of BaTiO3/SrTiO3 were fabricated by monitoring the film thickness with the RHEED oscillations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351536
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  • 4
    Electronic Resource
    Electronic Resource
    Epitaxial growth and dielectric properties of BaTiO3 films on Pt electrodes by reactive evaporation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7833-7838 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of BaTiO3 have been epitaxially grown on Pt(001)/MgO(100) substrates by reactive evaporation. Structural and electrical properties were investigated as a function of film thickness. In situ reflection high-energy electron diffraction and cross-sectional transmission electron microscope observations have revealed that the BaTiO3 films are epitaxially grown on Pt/MgO substrates from the initial stage without any other phase formation. From the images of an atomic force microscope, it has been found that islands of BaTiO3 are present on the bare Pt surface at the initial stage of deposition; the island structure changes to a continuous layer above 1.2 nm in thickness and BaTiO3 grows in a two-dimensional mode. The lattice parameters and the dielectric properties are dependent on the film thickness. Thermodynamic theory was introduced to explain the thickness dependence of the relative dielectric constant εr. Good agreement between the experimental results and the theoretical calculations leads to the conclusion that the thickness dependencies of the lattice parameters and the dielectric constants are caused by the two-dimensional stress due to the lattice mismatch between Pt and BaTiO3 and/or the difference in the thermal expansion coefficients of BaTiO3 and the MgO substrate. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357891
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  • 5
    Electronic Resource
    Electronic Resource
    Anomalous misfit strain relaxation in ultrathin YBa2Cu3O7−δ epitaxial films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3653-3662 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin YBa2Cu3O7−δ epitaxial films were successfully grown in situ on (001) SrTiO3 and MgO substrates by means of ozone-incorporating activated reactive evaporation. The x-ray-diffraction study was carefully examined to determine the structural properties of the grown films. Excellent crystallinity with no interfacial disorders was revealed by the appearance of the Laue oscillations. It was found that in a well lattice-matched YBa2Cu3O7−δ/SrTiO3 system, the crystallinity was deteriorated due to defect introduction at the critical layer thickness hc ( ∼ 130 A(ring)). Interestingly, also in a poorly lattice-matched YBa2Cu3O7−δ/MgO system, excellent crystallinity was revealed even at above hc ( 〈 24 A(ring)). This implies that an anomalous misfit relaxation process exists in the YBa2Cu3O7−δ/MgO system. In such a system, no crystal imperfection of the MgO substrate caused by defect introduction was elucidated by the grazing incidence x-ray scattering, which indicated that the MgO substrate did not contribute to the anomalous misfit relaxation. The anomalous growth manner was also found in YBa2Cu3O7−δ/MgO according to surface morphology investigations. Below 40 A(ring)( (approximately-greater-than) hc), island nucleation growth was found. Above 40 A(ring), it was observed that an atomically smooth surface was obtained and the crystallinity was simultaneously improved. It is suggested that YBa2Cu3O7−δ possesses an anomalous misfit relaxation mechanism, and that especially in the growth on MgO, it couples with the characteristic growth behavior at the initial stage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348513
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  • 6
    Electronic Resource
    Electronic Resource
    Depth selective Mössbauer spectroscopic study of Fe3O4 epitaxial films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1735-1740 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several (111) oriented 56Fe3O4 films containing a 5-A(ring)-thick 57Fe3O4 probe layer at or below the surface were grown epitaxially on the α-Al2O3 (0001) surface by a reactive vapor deposition method. Conversion electron Mössbauer spectroscopy was applied at 6, 78, and 300 K by using a recently developed helium-filled proportional counter. The well-crystallized surface has been found to be surprisingly stable even in air as characterized by the Mössbauer parameters that are almost the same as for the bulk. Moreover, the Verwey transition was detected clearly even in the 5-A(ring)-thick surface layer. However, the ferrous components seem to have changed their Mössbauer parameters probably because of their sensitivity to any crystalline field modifications in the surface. Generally speaking, the quality of epitaxial Fe3O4 films is very high: Any unusual surface state, if present, is confined in a shallow depth of ≤ 5 A(ring).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346602
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  • 7
    Electronic Resource
    Electronic Resource
    In situ growth of superconducting Nd-Ce-Cu-O thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 677-679 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting Nd-Ce-Cu-O thin films were epitaxially grown on SrTiO3 (100) by activated reactive evaporation. As-grown films showed the metallic temperature dependence of the resistivity and superconducting transition at 12.5 K (R=0). The remarkable parallel shift of the onset temperature of the resistive transition in the magnetic fields was observed. Ginzburg–Landau coherence lengths along the c axis and in the basal plane are 7 and 96 A(ring), respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103309
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  • 8
    Electronic Resource
    Electronic Resource
    Preparation of ferroelectric BaTiO3 thin films by activated reactive evaporation (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 527-529 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric BaTiO3 thin films were directly and epitaxially grown on SrTiO3 single crystal and epitaxial Pt film substrates by activated reactive evaporation. The substrate temperature was around 600 °C. For (100) oriented as-grown films, a typical ferroelectric hysteresis loop and a maximum of dielectric constant at about 115 °C were observed. The resistivity was as high as 109 Ω cm and the breakdown voltage was 2.7 MV/cm for as-grown BaTiO3 films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103300
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  • 9
    Electronic Resource
    Electronic Resource
    Tunneling measurements on superconductor/insulator/superconductor junctions using single-crystal YBa2Cu3O7−x thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 683-685 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have, for the first time, made quasi-particle tunneling measurements on a YBa2Cu3O7−x(001)/Y2O3 (001)/YBa2 Cu3 O7−x (001)junction, which was epitaxially grown on a MgO(100) substrate in an in-situ process. Both layers of YBa2 Cu3 O7−x showed the same superconducting transition of Tc end =86 K with ΔT(R=10–90%)=1.5 K. Quasi-particle tunneling in the direction perpendicular to the Cu-O planes was measured. A gap parameter Δ(4.5 K) of 9.0±0.2 meV and a value of 2Δ/kTc of 3.5+0.4−0.6 were obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103311
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  • 10
    Electronic Resource
    Electronic Resource
    A graphitic carbon nitride (1990)
    Springer
    Journal of materials science 9 (1990), S. 1376-1378 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00721588
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