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  • 2015-2019  (71)
  • 2000-2004  (107)
  • 1985-1989  (42)
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  • 1
    Electronic Resource
    Electronic Resource
    Photoionization cross section of InP:Fe (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3933-3936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spectral dependence of the photoionization cross section of Fe doped in InP is determined by photocapacitance spectroscopy. The optical process of the carrier emission from the deep acceptor level of Fe is discussed from the results. For the crystal-field-split level of Fe2+:5E, the photoionization cross sections for the fundamental transitions of 5E→Γ1 and Γ15→5E are adequately described by the Lucovsky model. Those optical thresholds are 0.63 and 0.78 eV, respectively, at 77 K. In comparison with the deep-level transient spectroscopy measurements, the following conclusions are obtained. The energy separation between the Fe acceptor level and the conduction-band edge is constant, but that between the Fe level and the valence-band edge varies correspondingly to the temperature variation of the InP band-gap energy. The fact that there is no difference between the optical and thermal activation energies for the 5E→Γ1 transition indicates that the Fe acceptor level is not perturbed by the InP lattice vibration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343358
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  • 2
    Electronic Resource
    Electronic Resource
    Photoionization cross section of In0.49Ga0.51P:Fe (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 529-531 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We determined spectral dependence of the photoionization cross section of the Fe acceptor in In0.49Ga0.15P by photocapacitance spectroscopy. As a result of the alloy effect we observed the nonexponential photocapacitance transient. We treated it with a model of the energetically broadened defect level. Optical thresholds for 5E and 5T2 of the crystal-field-split Fe acceptor level are 0.78 and 1.15 eV at 77 K. The small difference of 40 meV between the optical and thermal activation energies for the transition from the valence band to 5E reveals the weak coupling between the Fe acceptor level and the lattice vibration of InGaP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100920
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  • 3
    Electronic Resource
    Electronic Resource
    Room-temperature exciton optical absorption peaks in InGaAsP/InP multiple quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1353-1355 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We grew In1−xGaxAsyP1−y/InP quantum wells (QWs) by low-pressure metalorganic vapor phase epitaxy. The In1−xGaxAsyP1−y layer was closely lattice matched to InP with a composition of y=0.9 (x=0.47y). We investigated structural imperfections such as composition fluctuations, interface roughness, and nonperiodicity analyzing the low-temperature photoluminescence linewidth. We found that the InGaAsP layer composition fluctuated, causing about 5 meV inhomogeneity in the exciton energy level in QWs wider than about 3 nm. Since we obtained very smooth interfaces with less than one monolayer of fluctuation and excellent periodicity by lowering growth temperature to 570 °C, the inhomogeneity of the exciton energy level could be held at 6 meV for 20-period 10-nm multiple QWs. As a result, despite composition fluctuations, a clear room-temperature exciton optical absorption peak was observed at 1.5 μm for the first time to our knowledge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100713
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  • 4
    Electronic Resource
    Electronic Resource
    A systemic iridoviral disease in mullet, Mugil cephalus L., and tiger grouper, Epinephelus fuscoguttatus Forsskal: a first report and study (2004)
    Oxford, UK : Blackwell Science Ltd
    Journal of fish diseases 27 (2004), S. 0 
    Details
    ISSN: 1365-2761
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: A systemic iridoviral disease associated with high mortality was initially recognized in cultured mullet, Mugil cephalus L., and tiger grouper, Epinephelus fuscoguttatus Forsskal, by histopathology and transmission electron microscopy. Polymerase chain reaction was performed on tissues and viral isolates, using four published primer sets developed for the Red Sea bream iridovirus (RSIV). An indirect fluorescent antibody test was also performed on virus-infected ATCC gruntfin (GF) and seabass, Lates calcarifer Bloch, (SB) cells using a monoclonal antibody, RSIV M10. Our results suggested that the mullet and tiger grouper iridovirus bears genetic and antigenic similarities to RSIV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2761.2004.00589.x
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  • 5
    Electronic Resource
    Electronic Resource
    Experimental analysis of phase-mode Josephson digital circuits (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 949-955 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present experimental results on elementary phase-mode Josephson circuits whose combinations enable us to construct a total data processing system which is expected to be superior to the ordinary voltage-mode Josephson computer in several respects. In the phase-mode system a device depends for its operation on the existence of many stable states differing from one another by integer multiples of 2π in the phase plane. The total system is considered to be a prototype of quantum computer systems where physical quantum states are employed as logic states of information processing. By using the fabricated elementary circuits composed of SQUIDs and two types of branching points we have experimentally confirmed and, fan-out, fan-in operations, etc. We have also proposed an inhibit circuit, and presented the experimental results on the inhibit circuit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343524
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  • 6
    Electronic Resource
    Electronic Resource
    Double tunnel junctions for magnetic random access memory devices (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6064-6066 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optimum junction resistance and minimum tunnel magnetoresistance (TMR) ratio required for high density and high performance magnetoresistive random access memory (MRAM) devices with a TMR cell plus field effect transistor (FET) switch architecture are discussed by taking into account the variation of FET resistance causing noise. This implies that a TMR ratio over 25% at a 400 mV bias voltage and junction resistance of several tens of kilo-ohms for TMR cells are required with a signal voltage of 30 mV and a sense current of 10 μA, which leads to about 10 ns read time. This large magnetoresistance ratio at the elevated bias voltage requires low bias voltage dependence of TMR for the MRAM devices. In order to try to meet this requirement, double tunnel junctions were fabricated which possess the central ferromagnetic layer consisting of a thin discontinuous layer of hard ferromagnetic Co80Pt20 nanoparticles and insulating Al2O3 prepared by alternate sputtering of Co80Pt20 and Al2O3 targets. The maximum TMR obtained was 20.5% at room temperature for FeCo top and bottom electrodes without annealing. Bias voltage dependence of the (NiFe/CoFe)/1.5 nm Al2O3/discontinuous CoPt/2.6 nm Al2O3/(CoFe/NiFe) double tunnel junctions were revealed to be small compared to that of single junctions, the barrier of which was also fabricated by sputtering of an Al2O3 target. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372613
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  • 7
    Electronic Resource
    Electronic Resource
    Energy distribution of the compact microwave ion source for extremely low voltage ion extraction : Papers from the Ninth International Conference on Ion Sources (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 758-760 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The energy distribution of the ion beam extracted from the compact microwave ion source for extremely low voltage ion extraction was measured with Ar and CO as a discharge gas. The energy distribution was measured by the retarding field method, and changes with respect to the change in gas pressure were observed. The obtained data were arranged by the peak energy and the energy spread. For both gases, the peak energy and the energy spread decreased with an increase in the gas pressure. The energy spread of approximately 5 eV with the peak energy of 15 eV were obtained for Ar gas at the pressure of 10−2 Pa. For CO gas, the peak energy was higher than Ar and approximately 20 eV. The energy spread was 6 eV at the pressure of 10−2 Pa. These values agreed with the peak energy and energy spread that were estimated previously from the mass spectra analysis. Since the ion source was designed to be used in the researches of low energy ion-solid interaction, these characteristics satisfy the requirements for this purpose. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1429781
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  • 8
    Electronic Resource
    Electronic Resource
    Magneto-optical properties of Bi-substituted epitaxial rare-earth iron garnet thick films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3256-3258 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of (Yb,Tb,Bi)3Fe5O12 show excellent characteristics of the Faraday rotator at the wavelength of 1.3 μm; the rotation is −1800 deg/cm, insertion loss 0.3 dB, isolation 38 dB, and the temperature dependence of the Faraday rotation is 0.060 deg/K at room temperature. The films are grown epitaxially on the (Gd,Ca)3(Ga,Mg,Zr)5O12 substrates, from the melt in the flux PbO/B2O3/Bi2O3. The melt contains rare-earth ions (R=Y,Gd,Er,Dy,Tm,Yb,Lu) as c-site components of rare-earth iron garnets, and Fe and Ga+Al as a- and d-site components. The obtained film thickness is in the range 300–400 μm without appreciable defects on the substrate, with a 2-in. diameter. This technology will lead to the efficient production of the optical isolator used in optical systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338873
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  • 9
    Electronic Resource
    Electronic Resource
    Frequency characteristics of the Mn-doped InP p-n junction (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1961-1963 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Admittance spectroscopy is applied to the analysis of the thermal properties of the Mn acceptor-doped InP grown by liquid-phase epitaxy. The thermal activation energy and capture cross section are determined as ΔET=183 meV and σp=1.8×10−13 cm2, respectively. The cutoff frequency of the emission of holes from the Mn acceptor is 1 GHz at 300 K. It is shown that the small signal frequency characteristic of a buried heterostructure laser is improved at frequencies f〉1 GHz by using the Mn-doped p-InP layer for the current blocking region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341094
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  • 10
    Electronic Resource
    Electronic Resource
    Direct observation of the current oscillation in a dc SQUID (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3786-3788 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current waveforms of the self-resetting oscillation in a dc superconducting quantum interference device (SQUID) are observed by means of a Josephson sampling system. The frequency of the oscillation is around 60 GHz. The time period of the self-resetting oscillation is experimentally measured as a function of the bias current to the SQUID. Theoretical and numerical analyses are presented for the self-resetting oscillation in the dc SQUID.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337545
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