Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
51 (1987), S. 2206-2207
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially of the A center, and lowers the annealing temperature to 220–140 °C for the A and E centers, respectively. The level Ea (0.23) in the Pt-doped silicon is the Pt(−/0) level, an acceptor like the A center.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.98941
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