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  • 1985-1989  (130)
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  • 1
    Electronic Resource
    Electronic Resource
    3-Amino-3-deoxy-D-glucose: an antibiotic produced by a deep-sea bacterium (1987)
    Springer
    Cellular and molecular life sciences 43 (1987), S. 464-465 
    Details
    ISSN: 1420-9071
    Keywords: Deep-sea bacteria ; gram-positive ; antimicrobial activity ; Bacillus ; 3-amino-3-deoxy-D-glucose
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary Gram-positive bacteria isolated from deep-sea sediments of the Pacific basin showed considerable antibacterial activity. ABacillus strain, isolated from a sediment sample collected at a depth of 4310 m, was shown to produce 3-amino-3-deoxy-D-glucose, a known antibiotic.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01940457
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  • 2
    Electronic Resource
    Electronic Resource
    Selective T/H separation by NH3 laser multiple-photon dissociation of CTCL3 (1985)
    Springer
    Applied physics 38 (1985), S. 99-105 
    Details
    ISSN: 1432-0649
    Keywords: 28.60 ; 33.80 ; 42.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The multiple-photon dissociation (MPD) of CTCL3 and the selectivity of T/H separation were investigated using a pulsed NH3 laser, whose radiation contained a few lines depending on operating conditions. When Xe was added to chloroform, the dissociation rate of CTCL3 increased at chloroform pressures below 2 Torr as a consequence of the removal of multiple-photon absorption bottleneck by collisions with Xe. The dissociation rate of CTCl3 decreased monotonically with increasing chloroform pressure from 0.2 to 7 Torr. The depletion of CHCl3 was not observed within experimental errors. The lower limit of the tritium enrichment factor in photo-products produced by one pulse irradiation was 570 at chloroform pressure of 2 Torr.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00697448
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  • 3
    Electronic Resource
    Electronic Resource
    Human scalp hair as evidence of individual dosage history of haloperidol: method and retrospective study (1989)
    Springer
    European journal of clinical pharmacology 37 (1989), S. 239-244 
    Details
    ISSN: 1432-1041
    Keywords: haloperidol ; hair ; dosage monitoring ; nails
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Notes: Summary Hair samples and morning pre-dose plasma were collected from 40 patients who had received fixed daily doses of haloperidol for more than four months and whose compliance was good. After washing, 1 to 2 cm-long portions nearest to the roots of 2 to 3 strands of hair were completely dissolved in 2.5N NaOH. Haloperidol in that sample or alkalinised plasma was extracted and measured by RIA. Haloperidol concentrations in hair correlated well both with the trough concentration in plasma at steady-state (r=0.772,n=39) and with the daily dose (r=0.555,n=40). Another keratinized tissue, nail, was also collected from 20 of the 40 patients and the haloperidol level was compared with that in hair. The former was only about 4.3% of the latter and was significantly correlated only with the daily dose (r=0.525,n=20). Hair from 10 other patients in whom the dosage of haloperidol had been changed within a few months prior to sampling the hair was cut into 0.5 or 1 cm-long portions from the roots and the drug concentration in each portion was measured. If hairs were assumed to grow at 1 cm/month, a history of individual dosage could be deduced in 9 of the 10 patients from the distribution of drug level along the length of the hair. The results suggest that human scalp hair could serve as a useful tool for monitoring individual dosage history over several months, or in demonstrating exposure or non-exposure of a patient to a drug.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00679777
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  • 4
    Electronic Resource
    Electronic Resource
    Hydrogen atom abstraction by O(3P) from diborane and ethane (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 6282-6289 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We measured, via LIF, time-dependent concentrations of OH resulting from the reaction of O(3 P) with B2H6 and C2H6. The oxygen atoms were generated by titrating microwave discharged N2 /He with NO to the chemiluminescent end point. The operating pressures in the flow reactor ranged from 5 to 15 Torr; the mixtures consisted of He/O(3 P)/fuel in the approximate ratios 100/1/0.1 to 100/1/1. Flow conditions were such that in the low pressure experiments the controlled residence time prior to detection were 0.8–17 ms; under the higher pressure conditions, the time interval covered was 2–35 ms. We estimated that the temperature of the reaction region was (approximate)350 K, based on rotational emission temperatures measured for BO*, generated under closely similar conditions. First a complete mechanism was derived for ethane for a specified set of experimental parameters. For ethane, a single set of experimental conditions was selected for ratioing the recorded intensity to the computed OH density; this was cross checked with other runs for ethane. Finally, a mechanism was developed for B2H6, which quantitatively checked our experimentally determined profiles both in shape and magnitude, for three sets of conditions, and within a factor of 2 for the high concentration runs (100% B2H6 feeding into the reactor at 14 Torr).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.454751
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  • 5
    Electronic Resource
    Electronic Resource
    Synchrotron radiation lithography system in an atmospheric environment (invited) : INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 1643-1648 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The atmospheric environmental exposure system for synchrotron radiation (SR) lithography has been integrated using the Photon Factory storage ring (2.5 GeV). The system, composed of a highly reliable beamline, an SR extracting chamber and a prototype SR stepper, aims at attaining higher accuracy and throughput. Based on a fail-safe mechanism notion, a double-vacuum protection system, in which two sets of a fast closing valve and acoustic delay line are installed in the main beamline and branch beamline, respectively, has been organized. Vacuum breakdown tests indicated that any vacuum breakdown, a beryllium (Be) window rupture in the worst case, exerts little influence on the storage ring ultrahigh vacuum. The SR extracting chamber, equipped with a Be window and an extraction window, is filled with helium at atmospheric pressure. Particularly, the 50-μm-thick, 35-mm-diam Be window, vacuum-sealed by a Viton O-ring, was preliminarily employed and, so far, has operated successfully, giving a 25-mm square exposure area. In terms of practical availability and simplicity, the SR stepper in an atmospheric environment has been constructed. A novel differential mode linear Fresnel zone plate alignment method, which can detect an alignment error between a mask and a wafer during exposure, was developed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141050
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical properties of hydrogenated amorphous silicon layers on a polymer film substrate under tensile stress (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1678-1680 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of hydrogenated amorphous silicon (a-Si:H) layers on a polyethylene terephthalate (PET) film were studied under tensile stress. As the a-Si:H layers were stretched about 1.5%, dark conductivity and photoconductivity decreased gradually at first and then steeply beyond a critical strain. It was found that the former behavior was caused by a piezoresistance effect and the latter was attributed to breaking weak SiSi bonds, as shown by an increase of the electron spin resonance (ESR) intensity of Si dangling bonds. These changes of conductivity and ESR signal intensity were almost completely restored by annealing the a-Si:H layer at 150 °C for 1 h while relaxed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101431
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  • 7
    Electronic Resource
    Electronic Resource
    Variable-energy positron-beam studies of SiO2/Si irradiated by ionizing radiation (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 473-475 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variable-energy positron-beam studies have been carried out on Si with a 1.61 μm overlayer of SiO2 irradiated by x ray and γ ray up to the dose of 5×105 R. The Doppler broadening of annihilation photons was found to be strongly influenced by x-ray irradiation, and the effect was extended homogeneously over the entire oxide layer. A trapping model which neglects positron diffusion effects was applied to the dependence of the line shape parameter S on incident positron energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100616
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  • 8
    Electronic Resource
    Electronic Resource
    High-resolution Compton profile spectrometer for 29.5-keV x rays with a combination of crystal analyzer and imaging plate : International conference on synchrotron radiation instrumentation (SRI−88) (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2402-2405 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high-resolution Compton spectrometer has been installed for 29.5-keV incident x rays from a vertical wiggler inserted in the 2.5-GeV storage ring of the Photon Factory at Tsukuba. This spectrometer consists of bent-crystal monochromator, a Cauchois-type bent-crystal analyzer, and an imaging plate as a position sensitive detector. The overall momentum resolution is 0.084 a.u. for the incident x-ray energy of 29.5 keV. High-resolution Compton profile measurements on Al, a quasicrystal Al-Li-Cu, and solid and liquid phase of Li are shown to demonstrate the performance of this spectrometer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140730
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  • 9
    Electronic Resource
    Electronic Resource
    Laser-assisted chemical vapor deposition of Si: Low-temperature (〈600 °C) growth of epitaxial and polycrystalline layers (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 979-982 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed KrF laser irradiation (248-nm or 5-eV photons) during the chemical vapor deposition of Si from SiH4 has been used to periodically melt and rapidly resolidify thin layers of continuously deposited material. From one-dimensional heat-flow calculations, the increase in the average film growth temperature for the conditions used in these experiments was less than 1° C, the melt depth ranged from ∼5 to 40 nm, and the resolidification velocity was 2 to 3 ms−1. By proper choice of laser energy density E, pulse repetition rate f, and film deposition rate R, the melt depth was adjusted to correspond to a value slightly larger than the film thickness deposited between pulses. Using this procedure, we have grown polycrystalline Si films on SiO2 and Si single crystals on (100)Si substrates at average growth temperatures Ts between 535 and 650 °C. The polycrystalline films had average grain sizes of 1 to 2 μm with a (111) preferred orientation. Films grown without laser irradiation, but otherwise under the same conditions, were amorphous at Ts〈580 °C and fine-grained polycrystalline at higher temperatures. The room-temperature conductivity of irradiated In-doped polycrystalline films grown at Ts=565 °C was ∼5 orders of magnitude higher than the conductivity of unirradiated films. Irradiated single-crystal films doped with B exhibited room-temperature hole mobilities which were near the maximum theoretical bulk values for the corresponding carrier concentrations (∼1018 cm−3).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336144
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  • 10
    Electronic Resource
    Electronic Resource
    Laser-induced fluorescence measurement and analytical model for the reaction probability of CF2 on Si (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2775-2777 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate an analytical model for concentration profiles of reactive gas-phase species adjacent to surfaces, as determined by optical probe techniques. The model is illustrated with measurements of CF2, detected by laser-induced fluorescence, above silicon and other substrates. Conditions under which the model is applicable are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337110
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