Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 2707-2709
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The band gap of the base of Si1−xGex strained-layer base heterojunction bipolar transistors has been investigated using minority-carrier transport measurements. We have found a band-gap reduction of 131 meV for a base of Si0.82Ge0.18, which is in reasonable agreement with theoretical calculations. Our measurements for a base of Si0.85Ge0.15 show a band-gap reduction less than predicted, suggesting a reduction of strain in the structure.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101003
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