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  • 1
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    Germline transmission of exogenous genes in the chicken (1989)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1989-01-27
    Description: Difficulties associated with in vitro manipulation and culture of the early chicken embryo have restricted generation of transgenic chickens to approaches that use replication-competent retroviruses. The need to produce transgenic chickens in the absence of replicating virus prompted development of a new method of gene transfer into the chicken. Microinjection of the replication-defective reticuloendotheliosis virus (REV) vector ME111 beneath unincubated chicken embryo blastoderms results in infection of germline stem cells. This vector contains genetic information exogenous to the chicken genome, including both the herpes simplex virus type 1 thymidine kinase gene and the Tn5 neomycin phosphotransferase gene. About 8 percent of male birds hatched from injected embryos contained vector DNA in their semen. All four positive males tested passed vector sequences onto their progeny. Analysis of G1 offspring showed that gonads of G0 male birds were mosaic with respect to insertion of vector provirus. Thus, primordial germ cells present in the unincubated chicken embryo blastoderm are susceptible to infection by defective REV vectors.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Bosselman, R A -- Hsu, R Y -- Boggs, T -- Hu, S -- Bruszewski, J -- Ou, S -- Kozar, L -- Martin, F -- Green, C -- Jacobsen, F -- New York, N.Y. -- Science. 1989 Jan 27;243(4890):533-5.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Amgen Inc., Thousand Oaks, CA 91320.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/2536194" target="_blank"〉PubMed〈/a〉
    Keywords: Animals ; Animals, Genetically Modified ; *Blastoderm ; Blotting, Southern ; Chick Embryo ; Chickens ; DNA Probes ; DNA, Viral/analysis ; *Germ Cells ; Kanamycin Kinase ; Male ; Microinjections ; Nucleic Acid Hybridization ; Phosphotransferases/genetics ; Retroviridae/genetics ; Semen/analysis ; Simplexvirus/enzymology/genetics ; Stem Cells ; Thymidine Kinase/genetics ; *Transfection
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 2
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    Acylation of proteins with myristic acid occurs cotranslationally (1987)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1987-11-27
    Description: Several proteins of viral and cellular origin are acylated with myristic acid early during their biogenesis. To investigate the possibility that myristylation occurred cotranslationally, the BC3H1 muscle cell line, which contains a broad array of myristylated proteins, was pulse-labeled with [3H]myristic acid. Nascent polypeptide chains covalently associated with transfer RNA were isolated subsequently by ion-exchange chromatography. [3H]Myristate was attached to nascent chains through an amide linkage and was identified by thin-layer chromatography after its release from nascent chains by acid methanolysis. Inhibition of cellular protein synthesis with puromycin resulted in cessation of [3H]myristate-labeling of nascent chains, in agreement with the dependence of this modification on protein synthesis in vivo. These data represent a direct demonstration that myristylation of proteins is a cotranslational modification.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Wilcox, C -- Hu, J S -- Olson, E N -- New York, N.Y. -- Science. 1987 Nov 27;238(4831):1275-8.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Biochemistry and Molecular Biology, University of Texas, M.D. Anderson Hospital and Tumor Institute at Houston 77030.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/3685978" target="_blank"〉PubMed〈/a〉
    Keywords: Acylation ; Animals ; Cell Line ; Kinetics ; Methionine/metabolism ; Muscles ; Myristic Acid ; Myristic Acids/*metabolism ; *Protein Biosynthesis ; Proteins/*genetics/metabolism ; Sulfur Radioisotopes ; Tritium
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 3
    Electronic Resource
    Electronic Resource
    Comment on: "H+NO translation-to-vibration/rotation energy transfer: A classical trajectory study'' (1987)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 86 (1987), S. 3756-3758 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Classical trajectories were calculated for H+NO vibrationally, rotationally inelastic scattering at a relative translational energy of 2.3 eV over the 1A' surface. The results complement an earlier trajectory study by M. Colton and G. Schatz [J. Chem. Phys. 83, 3413 (1985)]. The role of nearly direct hits and complex formation are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.451930
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  • 4
    Electronic Resource
    Electronic Resource
    The expansion of product probability distributions from trajectory calculations in two-dimensional Fourier series (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 1958-1965 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The procedure for expanding product probability density functions determined from a classical trajectory study in a two-dimensional Fourier series is developed. This method has the advantage that essentially all of the information obtained from the trajectories is retained in the expansion; consequently, the resolution of the density functions is high. A smoothing technique using a Gaussian filter is also presented. The results are applied to a quasiclassical study of the F+H2 reaction, and new insights are obtained for this reaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.455094
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of process parameters on stress development in two-dimensional oxidation (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 323-330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simplified viscoelastic analysis has been made of the stress evolution during two-dimensional (2D) oxidation of silicon substrates, with the objective of learning the effect of process parameters such as temperature and steam pressure. A cylindrical silicon surface was chosen for simplicity of analysis, and yet it still has most of the essential elements pertinent to practical problems such as, e.g., the oxidation of trench corners in silicon integrated circuits. With correlations between the viscosity and the hydroxyl content of SiO2, and between the hydroxyl content and the steam pressure, the analysis shows that stress reduction can be achieved by carrying out oxidation at high steam pressures. However, stresses remain rather high if the oxidation temperature is as low as 800 °C. For a linear-parabolic oxidation kinetics, both the oxide and the substrate stresses do not increase indefinitely with the increase of oxide thickness, but reach their respective peaks at oxide thicknesses that are dependent on process parameters. The present results should be useful in serving as guidelines in the selection of 2D oxidation conditions. The accuracy of a previous 2D oxidation model based on the viscous flow of an incompressible fluid has also been assessed with reference to the viscoelastic model. The incompressible-fluid model is found to be quite accurate at high temperatures (approximately-greater-than)900 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341430
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  • 6
    Electronic Resource
    Electronic Resource
    Stress from a parallelepipedic thermal inclusion in a semispace (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2741-2743 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Many problems concerning stress arising from the embedding of a foreign body in a semi-infinite matrix can be described as thermal inclusion involving a single or an assemblage of parallelepipedic elements. Because of its basic usefulness, we present an analytical solution to the problem of a parallelepipedic thermal inclusion in a three-dimensional semispace. Application of this solution to the currently important problem of trench isolations in integrated circuits will be presented separately elsewhere.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344194
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  • 7
    Electronic Resource
    Electronic Resource
    Interstitial and vacancy concentrations in the presence of interstitial injection (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1069-1075 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In processes such as thermal oxidation and phosphorus diffusion, where self-interstitials are generated in excess, what happens to the vacancy concentration may significantly affect many diffusion processes which occur via dual mechanisms. Most authors in diffusion modelling have assumed as self-evident that, for a very long time or in steady state, the product of the vacancy and the interstitial concentrations should be a constant. It is shown here that this assumption is generally invalid. The fallacy in the analogy between this case and the solubility product is pointed out. A correct relationship is first derived on a uniform defect concentration approximation. Then rigorous expressions for both the vacancy and the interstitial concentrations are given from an exact solution of simultaneous vacancy and interstitial continuity equations that include diffusion, recombination, and generation terms, under appropriate boundary conditions. The errors in the results from previous speculations are especially severe in the surface region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334548
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  • 8
    Electronic Resource
    Electronic Resource
    Kinetics of interstitial supersaturation and enhanced diffusion in short-time/low-temperature oxidation of silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4527-4532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetics of the supersaturation of self-interstitials and the enhancement of impurity diffusivity in short-time/low-temperature oxidation of silicon is investigated analytically. It is found that, whereas in long-time/high-temperature oxidation the interstitial supersaturation and the diffusivity enhancement decrease with time as t−n (n(approximately-equal-to)0.2–0.3), in short-time low-temperature oxidation they start from zero and increase with time, until some characteristic time determined by the linear-parabolic oxide growth. This characteristic time increases rapidly with the decrease of temperature. This kinetic behavior has not been expected previously, mainly because there is no available data on stacking fault growth and on diffusion enhancement under the short-time/low-temperature condition which has become common in modern IC processings. The more general case of linear-parabolic oxidation and the effect of bulk recombination have also been analyzed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335353
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  • 9
    Electronic Resource
    Electronic Resource
    Point defect generation and enhanced diffusion in silicon due to tantalum silicide overlays (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 308-310 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tantalum silicide deposited directly on monocrystalline silicon substrates and annealed at 950 °C causes enhanced diffusion of both boron and antimony in buried layers. The effect is taken as evidence of vacancy supersaturation, since it is known that antimony diffuses in silicon by an almost entirely vacancy mechanism. It also indicates a substantial vacancy component in boron diffusion, at least at 950 °C, or lower. The simultaneous occurrence of boron and antimony enhanced diffusion contrasts with the nitridation effect on diffusion previously reported. That the enhanced diffusion occurred in buried layers excludes the snow-plow mechanism. The Si:Ta ratio of the sputter-deposited tantalum silicide is slightly less than 2. The interpretation is that further silicidation generates vacancies by removing silicon atoms from the silicon substrate. Enhanced diffusion was not detectable when there was a 150-nm intervening layer of polycrystalline silicon film between the silicide and the monocrystalline silicon substrate, indicating that polycrystalline silicon is an effective sink for excess vacancies, perhaps more than it is for excess interstitials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98452
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  • 10
    Electronic Resource
    Electronic Resource
    Structure of bis(tetra-n-butylammonium) 1,2,3;1,2,4;1,3,4;2,3,4-tetra-μ3-sulfido-tetrakis[(benzenethiolato)iron] (1987)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 43 (1987), S. 352-353 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108270187095866
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