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  • 1
    Electronic Resource
    Electronic Resource
    Capacitance properties in n-type AlxGa1−xAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2414-2416 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of n-type AlxGa1−x As, for x〉0.2, are governed by deep donor states (formerly called DX centers) created by the isolated donor atoms. We have studied the capacitance properties of such layers for Si and Sn dopants. The meanings of the capacitance-voltage carrier profiling and of the capacitance dependence with temperature have been considered. The deep donor energy position with respect to the Γ minimum has been determined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102031
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  • 2
    Electronic Resource
    Electronic Resource
    Electron capture by DX centers in AlGaAs and related compounds (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1732-1734 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: n-type dopants in Alx Ga1−x As, GaAs1−x Px, and related compounds create deep donors that control the free-electron concentration for x〉0.2. The electron capture by the deep donors shows a very nonexponential dependence with filling time. In this letter the electron capture kinetics is modeled, and the influence of the donor ionization factor, sample degeneracy, and size effects, are introduced. Capture barrier energy determination is discussed, and a comparison with experimental capture data is made.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102202
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  • 3
    Electronic Resource
    Electronic Resource
    Centers at junction boundaries in AlGaAs single heterojunction red light-emitting diodes (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2235-2243 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In AlGaAs red light-emitting diodes fabricated by liquid-phase epitaxy the presence and characteristics of deep centers located near the injecting-active junction boundaries have been studied. Transient capacitance, DLTS, photocapacitance, and photocurrent techniques have been applied. Besides the presence, in the n-type injecting layer, of centers related to the Te dopant (DX defects), deep hole traps have been detected at both sides of the n-p heterojunction. The physical origin of such hole traps, present in moderately large concentrations, is discussed in terms of Zn-related complexes. This defect pattern allows us to explain the thermal- and photocapacitance, and the freeze-out and photocurrent characteristics found in such devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336365
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  • 4
    Electronic Resource
    Electronic Resource
    Trapping characteristics of Te-related centers in GaAs1−xPx (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5295-5301 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient capacitance and photocapacitance techniques have been used to study the characteristics of two electron traps related to Te in GaAs1−xPx: Te. Levels En1 and En2 have thermal activation energies of 0.17 and 0.27 eV, respectively, and their thermal electron emission and capture rates deviate markedly from Schockley–Read–Hall theory for near band gap crossover compositions. Such centers are found for 0.3〈x≤1, are linked to the X conduction band minima, and their photoionization thresholds are 0.5 and 1 eV, respectively. Trap concentrations have been studied as a function of Te doping level, Zn diffusion temperature, and N content (x〉0.4) in GaAsP LEDs. It is suggested that both defects belong to the DX type, and they have been described by a large lattice relaxation model. Franck–Condon energies of 0.3 and 0.95 eV have been determined, respectively. The properties of present Te-related defects are quite similar to donor related centers in AlxGa1−xAs, including the nonexponential capacitance transients found in near x∼0.4 compositions. It is important to mention that both centers have very large hole capture coefficients (σp〉10−14 cm2) and behave as efficient recombination centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335484
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  • 5
    Electronic Resource
    Electronic Resource
    Fine structure of the alloy-broadened thermal emission spectra from DX centers in GaAlAs (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1877-1879 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy in Si- and Sn-doped GaAlAs reveals a fine structure of the DX center thermal emission spectra under adequate filling pulse and sampling window times. This structure is reproducible in samples with Al mode fractions near 30% but it is not detectable in samples with 85% Al content. All resolved peaks of this fine structure have the same thermal emission energy but quite different capture cross section (σ∞n). This fact indicates that the origin of the fine structure and of the nonexponential behavior of the thermal emission processes is the discrete broadening of σ∞n due to the alloy effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99611
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  • 6
    Electronic Resource
    Electronic Resource
    Novel method to determine capture cross-section activation energies by deep-level transient spectroscopy techniques (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 660-661 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep-center characterization by deep-level transient spectroscopy (DLTS) allows a direct determination of the trap thermal emission activation energy. However, capture barrier energy measurements, based on trap partial filling by pulses of increasing width, require a quite different experimental processing and pose some hardware difficulties. In this letter we present a new method to determine the trap capture barrier energy, one that requires constant-width filling pulses and obtains capture information from standard DLTS data. This technique has been applied to Te-, Sn-, and Si-related DX centers in AlGaAs alloys.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99366
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  • 7
    Electronic Resource
    Electronic Resource
    Direct evidence of the DX center link to the L-conduction-band minimum in GaAlAs (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 383-385 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrostatic pressure techniques together with deep level transient spectroscopy (DLTS) measurements have shown that the Si-DX center in GaAlAs is linked to the L-conduction-band minimum. When hydrostatic pressure is applied to a 74% Al content sample, an exponential reduction of the DLTS signal is observed. This exponential dependence with pressure arises from the reduction of the DX filling factor (electron occupancy) due to the increasing X-L energy difference with pressure. Our results, together with previous data, also show that the capture barrier height originating from the lattice relaxation is an intrinsic parameter of both the material and the donor species, that does not depend on Al content or conduction-band structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99473
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  • 8
    Electronic Resource
    Electronic Resource
    Aerobic Incubation of Clostridium perfringens in the Presence of an Oxygen-Reducing Membrane Fraction (1986)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 51 (1986), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: The recovery and growth rates of C. perfringens were evaluated in media to which an oxygen-reducing membrane fraction from E. coli was added. Each of three C. perfringens strains was incubated in Tryptose Sulfite Cycloserine agar, with and without the membrane fraction. Recoveries were greater on media incubated aerobically with the membrane fraction than on the other formulations incubated an-aerobically or aerobically. C. perfringens ATCC 12917 reached stationary phase more rapidly in fluid thioglycollate medium (FTM) plus the membrane fraction than in FTM alone. Results showed that the membrane fraction allowed aerobic incubation for the recovery of C. perfringens.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1986.tb13873.x
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  • 9
    Electronic Resource
    Electronic Resource
    Mannose incorporation and lectin recognition of pronase-sensitive components in Micrococcus lysodeikticus (M. luteus) membranes (1986)
    Springer
    Molecular and cellular biochemistry 69 (1986), S. 169-178 
    Details
    ISSN: 1573-4919
    Keywords: biosynthesis membrane glycoproteins ; bacitracin ; tunicamycin ; lipid intermediates
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology , Medicine
    Notes: Summary Isolated cytoplasmic membranes from Micrococcus lysodeikticus were able to incorporate [14C]mannose from GDP-[14C]mannose. Labelled mannose remained in the membrane fraction after its repeated washing and lipid extraction. Sodium dodecyl sulfate gel electrophoresis in 12% acrylamide showed a set of bands with molecular weights ranging from 230 000 to 19 000 which stained for protein and carbohydrate, and incorporated [14C]mannose. Some of these bands reacted with different lectins (concanavalin A, wheat germ agglutinin and ricin). Furthermore, the mannose was incorporated via a glycosylation pathway similar to that followed in eukaryotic system as shown by the preliminary identification of a lipid intermediate transfering the sugar to proteins and by the differential sensitivity to bacitracin and tunicamycin. These complex membrane components were sensitive to digestion with pronase. All the results presented suggest their glycoprotein nature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00224764
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  • 10
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    Life Span of Arctic Data Buoys (1986)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 56(1/2), pp. 99-107, ISSN: 0032-2490
    Details
    Publication Date: 2019-07-17
    Repository Name: EPIC Alfred Wegener Institut
    Type: "Polarforschung" , peerRev
    Format: application/pdf
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