ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A strong, wide infrared absorption band in 2050–2150-cm−1 range has been found in neutron-transmutation-doped silicon grown by the floating-zone method in a hydrogen atmosphere and annealed at 650 °C. This band is due to the stretching vibration of the Si–H bond, formed as hydrogen atoms diffuse, aggregate, and saturate silicon dangling bonds in the neutron-irradiation disordered region. This absorption band is similar to that of hydrogenated amorphous silicon in the 1900–2150-cm−1 range except that its vibration frequency is somewhat higher. The disordered region defect and its amorphous-siliconlike property could be observed because of the incorporation of hydrogen. The hydrogen concentration of the floating-zone melted silicon grown in a hydrogen atmosphere used in this study is estimated to be (1–2)×1017 cm−3 on the basis of the strength of this wide infrared absorption band. A possible reason for this vibration frequency shift is discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.340342
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