ISSN:
1573-9228
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract The temperature dependence of the charge carrier concentration and mobility in n-type GaAs monocrystals doped jointly by Ge and isovalent In and Sb impurities is investigated. The observable charge carrier concentration and mobility changes in the GaAs:Ge:In and GaAs:Ge:Sb are compared with the corresponding characteristics in GaAs:Ge, and the change in properties along the ingots can be explained by the Ge impurity redistribution in the gallium and arsenic sublattices in the presence of an isovalent impurity.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00897466
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