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Wavelength selective infrared microscopy: A nondestructive and quick method for the investigation of buried structures in optoelectronic devices (1986)

Sartorius, B. ; Rosenzweig, M.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 60 (1986), S. 3401-3406

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: In this paper we present an optical method to control the geometry of buried layers in optoelectronic heterostructures. The technique uses an optical microscope equipped for infrared applications and relies on the fact that the different layers of the multilayer structure have different band gaps. Accordingly transmission/absorption, reflectance, and photoluminescence of the inidividual layers exhibit their characteristic near-band-gap spectral variations at different wavelengths. By appropriate selection of the wavelength range used for image formation, any layer of interest can be made visible. As an example we investigated a mushroom-type InGaAsP/InP 1500-nm laser structure with subsequent mass transport. Both technological steps, the formation of the mushroom by underetching, and the regrowth by mass transport represent critical processes in the fabrication of these index-guided lasers. Our results show clearly that the successful accomplishment of the process can be controlled by images of the selected buried layer. Contrast and resolution of the pictures are sufficient to show any irregularity in etching or regrowth. The main advantage of the method is that it offers the possibility of investigating whole wafers without sample preparation and in a nondestructive way, which is in marked contrast to observation with a scanning electron microscope, where only profiles along cleaved facets can be inspected.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.337637

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Thermal degradation effects in InP (1988)

Sartorius, B. ; Schlak, M. ; Rosenzweig, M. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 63 (1988), S. 4677-4682

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Thermal degradation in InP has been regarded to be equivalent to surface deformation. By means of luminescence microscopy we discovered a much larger scale of degradation effects. Crystallographic defects of several geometrical characteristics have been observed although the surfaces seemed to be perfectly smooth. The standard methods of protection against degradation used in liquid phase epitaxy turned out to be unreliable concerning the invisible degradation effects. We propose a model which describes the evolution of degradation starting with invisible crystallographic defects. An extreme loss of phosphorus concentrated around dislocations causes local melting representing the final and visible stage of degradation. We suppose that P vacancies which have never been noticed before are responsible for inhomogeneities affecting processing and the reliability of optoelectronic devices.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.340122

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