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  • 1
    Electronic Resource
    Electronic Resource
    Changes in soft magnetic properties of Fe multilayered films due to lattice mismatches between Fe and intermediate layers (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4338-4344 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe multilayered films with various intermediate layers are formed. Their magnetic properties and film structures are examined to understand the mechanism originating soft magnetic properties. The soft magnetic properties change with the lattice mismatches between Fe and intermediate layers, showing low coercive force and high relative permeability at lattice mismatches from 0.4 to 1.2%. It is thought that the lattice mismatches above 0.4% decrease Fe crystallite size and improve soft magnetic properties. Although Fe crystallite size is small at the lattice mismatches above 1.2%, the soft magnetic properties are poor. This is because the large lattice mismatch increases internal stress and magnetic anisotropy energy. This report indicates that the good soft magnetic properties are obtained when both Fe crystallite size and internal stress are small.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343981
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  • 2
    Electronic Resource
    Electronic Resource
    Band lineup for a GaInP/GaAs heterojunction measured by a high-gain Npn heterojunction bipolar transistor grown by metalorganic chemical vapor deposition (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4898-4902 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaInP(N)/GaAs( p) heterojunction bipolar transistor was fabricated by metalorganic chemical vapor deposition (MOCVD) for the first time. The common-emitter current gain exceeded 200 at a current density around 10 A/cm2 and the offset voltage was as small as 50 mV. Thermionic emission theory indicates that the conduction-band discontinuity (ΔEc) at GaInP/GaAs heterointerface is as small as 30 meV at room temperature and this value was more than 160 meV smaller than 0.19–0.22 eV obtained by the C-V profile method. The band-gap energy for MOCVD-grown GaInP was 60 meV smaller than the intrinsic band-gap energy (1.91 eV), but this value is too small to explain the difference between the present ΔEc value and the previously reported ΔEc value.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343205
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  • 3
    Electronic Resource
    Electronic Resource
    Design and fabrication of thin-film heads based on a dry process (invited) (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4157-4162 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High performance thin-film heads for disk drive systems have been developed based on a dry process. Heads were computer simulated and optimal design was carried out. Relationships among Ni-Fe composition, domain structure and wiggle of the read-write waveform were obtained. Based on these results, optimum Ni-Fe composition range was determined. A planarization procedure for an inbedding insulator of the conductor coil was developed. Also narrow track patterning and gap depth controlling procedures were developed. Using these procedures, a two-layered seventeen-turn thin-film head for a large capacity disk drive system (23 Mb/in.2) has been developed. The head exhibited excellent read-write characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338514
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetic and magneto-optic properties of Tb-FeCo-Al films (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3903-3905 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of an addition of Al on the corrosion resistance of amorphous 100-nm-thick Tb-Fe coevaporated films has been studied. From measurements of the change of the optical transmittance, it is seen that the growth of pin holes is reduced considerably. However, the addition of Al also results in a decrease of the magnetic and magneto-optic properties of the Tb-Fe films such as the Curie temperature, the Kerr rotation, the perpendicular anisotropy, and the coercivity. These problems, however, are recovered easily by replacing part of the Fe by Co. This replacement also contributes to the improvement of the corrosion resistance. It has been shown that Tb-Fe-Co-Al films have a much better corrosion resistance than Tb-Fe or Tb-Fe-Co films, while having the same good magnetic and magneto-optic properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334910
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  • 5
    Electronic Resource
    Electronic Resource
    Properties of Fe-Al-Si-N thin films prepared by N2 reactive sputtering (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3844-3846 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have attempted to prepare Fe-Al-Si-N films by rf magnetron sputtering in an atmosphere of Ar+N2, employing an Fe-Al-Si target, and investigated the influence of nitrogen on the properties of sendust alloys. Some properties, such as Vicker's hardness and electrical resistivity of the films, were improved in the presence of nitrogen. In addition, the Fe-Al-Si-N films interestingly show superior magnetic properties to those of sendust films. For example, effective permeability at 1 MHz of the film, prepared under the selected conditions, reached a maximum of approximately 4000, exceeding 2200 of our standard sendust film. The microstructure of Fe-Al-Si-N and Fe-Al-Si films has been observed using scanning electron microscopy. As a result, we have found a difference in microstructure between the nitrogen-containing films and the regular films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338616
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  • 6
    Electronic Resource
    Electronic Resource
    Ionic conductivity and mobility in network polymers from poly(propylene oxide) containing lithium perchlorate (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 123-128 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ionic conductivity σ and mobility μ in the amorphous network polymers from poly(propylene oxide) (PPO) containing lithium perchlorate (LiClO4) at the concentration of [LiClO4]/[PO unit]=0.042 and 0.076 were investigated by means of complex impedance and time-of-flight methods. The σ values of the PPO–LiClO4 complexes reached 10−5 S cm−1 at 70 °C. The temperature dependence of σ deviated from a single Arrhenius behavior above a critical temperature (−1 °C and 11 °C) which approximately corresponded to the glass transition temperature Tg. The μ values were relatively high and changed from 10−6 to 10−5 cm2 V−1 s−1 in the temperature range of 40–100 °C. The Nernst–Einstein equation correlated μ with the ionic diffusion coefficient D. The Williams–Landel–Ferry equation with C1(approximately-equal-to)5 and C2(approximately-equal-to)30–50 held with a temperature dependence of D in the order of 10−8–10−7 cm2 s−1. The change in the number of ionic carriers n with temperature obeyed the Arrhenius equation with the activation energy of 0.26 and 0.34 eV. The degree of dissociation for LiClO4 in the PPO networks was 1–6%, and the dissociation was facilitated in the low LiClO4 concentration complex. The temperature dependence of σ above Tg was interpreted quantitatively in terms of n and μ.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335386
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  • 7
    Electronic Resource
    Electronic Resource
    Recrystallization of AlNx (x〈1) thin films induced by N implantation (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 185-186 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of ion implantation on recrystallization of films has been investigated using AlNx (x〈1) films as targets. The 750 A(ring) AlNx (x〈1) films were deposited on Si(111), glassy carbon, and commercial glass by an activated reactive evaporation method in a nitrogen atmosphere. The 80 keV N+ implantations were carried out near room temperature with doses ranging from 5×1016 to 5×1017 N+ions/cm2 at 1×10−6 Torr. The x-ray diffraction patterns revealed that N implantation enhances a (002) orientation of AlN, growth of which depends on doses. The optical transmittance of the AlNx films is also improved by N implantation, depending on doses. N implantation into AlNx (x〈1) even without any annealing is effective for recrystallization of the films, which leads to improvement of optical properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100581
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