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  • American Institute of Physics (AIP)  (4)
  • Wiley-Blackwell  (1)
  • 1985-1989  (5)
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Publisher
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Characterization of crystalline quality of diamond films by Raman spectroscopy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2608-2610 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured Raman spectra of diamond films prepared by a hot-filament method and found that diamond layers on Si substrates are under compressive strain. The degree of the strain is found to increase with increasing nondiamond component in the diamond films. It is shown that Raman spectroscopy is a powerful method to estimate the crystalline quality, especially the strain in the diamond films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101951
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  • 2
    Electronic Resource
    Electronic Resource
    Raman spectra of diamondlike amorphous carbon films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6464-6468 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectra of diamondlike amorphous carbon (a-C) films prepared under atmosphere with various hydrogen gas content have been measured as a function of excitation wavelength. The Raman spectral profiles vary with excitation wavelength depending on electronic absorption spectra associated with π-π* electronic transitions. Dependence of Raman spectra on excitation wavelength is interpreted in terms of π-π* resonant Raman scattering from aromatic rings with various sizes rather than polyene chains. The relative intensity of a 1400 cm−1 band against a 1530 cm−1 band is found to decrease with an increase of sp3 content in a-C films. It is shown that the relative intensity can be used as a parameter for sp3 content.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342063
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  • 3
    Electronic Resource
    Electronic Resource
    Epitaxial growth of silicon at low temperature by ultrahigh vacuum electron cyclotron resonance plasma chemical vapor deposition (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5183-5188 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of a silicon thin film has been accomplished at a temperature lower than 650 °C by electron cyclotron resonance plasma chemical vapor deposition using an ultrahigh vacuum chamber. Ar plasma from the same electron cyclotron plasma ion source is also used for surface cleaning of the substrate. The relationship between the cleaning condition of a substrate and the quality of an epitaxially grown silicon film is examined in detail. The energy of Ar plasma in the cleaning process should be kept lower than 100 eV in order to obtain films of good crystal quality. Otherwise, damage by Ar ion bombardment cannot be restored by annealing at lower than 700 °C. The epitaxial growth also should be carried out without the accelerating bias voltage to avoid residual compressive stress in the film. An epitaxial film with perfect crystal structure (indicating only a Kikuchi pattern of reflection of high-energy electron diffraction) is obtained at the substrate temperature of 710 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342429
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  • 4
    Electronic Resource
    Electronic Resource
    Resonant Raman scattering of diamondlike amorphous carbon films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1639-1641 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectra of diamondlike amorphous carbon (a-C) films prepared by the sputtering method have been measured as a function of the excitation wavelength. The Raman spectral profiles vary sensitively, reflecting the change of absorption spectra associated with π-π* electronic transitions with the hydrogen content of the films. From a comparison between Raman and electronic absorption spectra, it is confirmed that the Raman spectral variation with the excitation wavelength is due to the π-π* resonant Raman scattering from π-bonded (sp2) carbon clusters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99060
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  • 5
    Electronic Resource
    Electronic Resource
    Raman spectra of thin TCNQ films deposited on silver films (1986)
    Chichester [u.a.] : Wiley-Blackwell
    Journal of Raman Spectroscopy 17 (1986), S. 369-371 
    Details
    ISSN: 0377-0486
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: Raman spectra of thin TCNQ films deposited on Ag films were measured as a function of TCNQ thickness. For these thin TCNQ films, several modes which are different from those in TCNQ films deposited on glass substrates were observed. A comparison with the Raman spectra of an oxidation product of TCNQ2- (DCTC-) indicates that the thin TCNQ layers (ca 20 Å) near the underlying Ag films are converted into DCTC- layers.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jrs.1250170414
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