Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
61 (1987), S. 1883-1890
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Defects in β-SiC films grown on Si substrates by chemical-vapor deposition have been investigated using x-ray double-crystal topography. Varying levels of dislocations are often observed in the form of channels, originating at the SiC/Si interface, which can be detected topographically regardless of the visible roughness in the film surface. It is found that rough surfaces are crystallographically more "flat,'' on a macroscopic scale, compared to smooth surfaces which are often curved. Films in the latter group also contain fewer defects than the former, and are characterized mostly by misfit striations along [110] directions. A model for defect propagation is proposed connecting the observed topographic detail to the lattice mismatch, differences in thermal expansion, and the relative thickness of film and substrate.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.338033
Permalink
|
Location |
Call Number |
Expected |
Availability |