ISSN:
1432-0630
Keywords:
78.65.Fa
;
07.60.Fs
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Multiple-angle-of-incidence (MAI) ellipsometry is used to study Ge x Si1−x /Si superlattices fabricated by a RRH/VLP-CVD system. Based on the fundamental ellipsometric equations and properties of semiconductor superlattices (SL), various parameters of SL structure, such as the sublayer thickness, complex refractive index and composition, are achieved precisely and simultaneously. The results obtained from ellipsometry are well consistent with those from growth conditions and other characterization techniques.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00348400
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