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  • 1
    Electronic Resource
    Electronic Resource
    Sulfur and nitrogen evolution in the Argonne coals. Experiment and modeling (1993)
    s.l. : American Chemical Society
    Energy & fuels 7 (1993), S. 710-720 
    Details
    ISSN: 1520-5029
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ef00042a004
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  • 2
    Electronic Resource
    Electronic Resource
    Analysis of the Argonne premium coal samples by thermogravimetric Fourier transform infrared spectroscopy (1990)
    s.l. : American Chemical Society
    Energy & fuels 4 (1990), S. 319-333 
    Details
    ISSN: 1520-5029
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ef00021a017
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  • 3
    Electronic Resource
    Electronic Resource
    An empirical model for coal fluidity based on a macromolecular network pyrolysis model (1992)
    s.l. : American Chemical Society
    Energy & fuels 6 (1992), S. 143-154 
    Details
    ISSN: 1520-5029
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ef00032a005
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  • 4
    Electronic Resource
    Electronic Resource
    On the rectifying ability of a p-type semi-insulating junction (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5408-5419 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The system consisting of an unintentionally doped GaAs epitaxial layer on a semi-insulating (SI) GaAs substrate forms a starting point for the GaAs integrated circuit technology. It is also the genesis of problems for GaAs field-effect transistors (FETs) in the form of back gating. Potentials applied to a point on the surface may propagate several millimeters to modulate the conduction of an FET built into the layer. In addition, the conductivity of the epilayer may be efficiently modulated by a potential applied to the back of the SI substrate. Well-developed p-channel FET characteristics have been observed in an epilayer on top of a 0.4-mm-thick SI substrate using the back of the substrate as a gate. Numerical simulations revealed that under some circumstances potentials may propagate across the substrate with little attenuation, giving a degree of modulation in agreement with experiment. Conditions for current transport then corresponded closely to those in a rectifying p-n junction. The parameter space was fully explored numerically and using an analytical model, and a simple set of conditions for rectification were developed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350198
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  • 5
    Electronic Resource
    Electronic Resource
    An FT-IR based instrument for measuring spectral emittance of material at high temperature (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 3700-3708 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: For surfaces at high temperature the emitted spectrum of electromagnetic radiation is the most convenient probe of temperature, if the spectral emittance (emissivity) of the sample at that temperature is known. A bench top instrument has been developed that, when coupled to a Fourier transform infrared (FT-IR) spectrometer, allows for the measurements of emission, directional-hemispherical reflection, and directional-hemispherical transmission from materials at elevated temperatures. From these radiative property measurements, the temperature at the measurement point and the spectral emittance of the surface can both be obtained. The method has been applied to a variety of materials (i.e., metals, dielectrics, coal slags) with a variety of surface properties (i.e., partially transmitting and nontransmitting; specularly reflecting and diffusely reflecting) at temperatures up to 2226 K. The article describes the technique, presents the results for several materials, and compares results with those for other investigators.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141538
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  • 6
    Electronic Resource
    Electronic Resource
    Temperature dependence of carrier density in depleted epitaxial layers deposited on semi-insulating substrates (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1565-1569 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have calculated the temperature dependence of the carrier density in epitaxial layers of semiconductors deposited on semi-insulating substrates when the potentials at the surface and the substrate interface are pinned. The results of these calculations are compared to experiments on thin, nominally undoped p-type layers of GaAs deposited epitaxially on EL2-dominated substrates. The theory predicts that as the temperature is lowered to some critical value the depletion layers at the edges of the epilayer overlap for thin, lightly doped samples. Below this value the carrier density decreases exponentially with inverse temperature with an activation energy which depends on the surface and interface potentials, as well as on the dopant concentration and the width of the layer. This activation energy can be derived analytically for strong depletion. In the intermediate range between negligible and complete depletion of the layer the carrier density must be obtained by numerical methods, and we present the results of such a calculation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349518
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  • 7
    Electronic Resource
    Electronic Resource
    A temperature-independent capacitance in semiconductor-insulator-semiconductor capacitors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6548-6551 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both measurements of capacitance-voltage (C-V) curves of n− GaAs-undoped Al xGa1− xAs- n+ GaAs (AlGaAs) capacitors at different temperatures, and calculations of C-V curves of semiconductor-insulator-semiconductor (SIS) capacitors at different temperatures, show that there is a temperature-invariant capacitance CC and voltage VC at which C-V curves at different temperatures intersect. We show that this is a general property of SIS capacitors having a degenerate gate and nondegenerate substrate of the same doping type, and that qVC, where q is the electron charge, is approximately equal to the Fermi energy of the degenerate GaAs gate. VC provides a good estimate for the voltage required to establish an accumulation layer on n− GaAs at low temperatures, which is determined from magnetotunneling measurements on AlGaAs capacitors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345133
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  • 8
    Electronic Resource
    Electronic Resource
    Threshold shifting in pseudomorphic semiconductor-insulator-semiconductor heterostructure field-effect transistors (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2285-2287 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pseudomorphic (In,Ga)As layers are used in GaAs-based semiconductor-insulator- semiconductor (SIS) structures to shift the threshold voltage from the natural, near-zero value. The threshold voltage is shifted positively for (In,Ga)As gate layers, and negatively for (In,Ga)As channel layers, by the (In,Ga)As/GaAs conduction-band offset. The thermionic and field emission barrier heights agree with shifts obtained in capacitance-voltage characteristics. The structures withstand implant activation anneals, establishing a simple technology to create either enhancement or depletion-mode devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104900
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  • 9
    Electronic Resource
    Electronic Resource
    Regrown ohmic contacts to thin GaAs layers and two-dimensional electron gas (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 171-173 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the first realization of extremely low resistivity regrown ohmic contacts to a variety of GaAs/AlGaAs structures using selective epitaxy. For planar regrown n+-GaAs contacts to n-GaAs we have obtained contact resistivity values ∼1×10−7 Ω cm2, and ∼1×10−8 Ω cm2 for lateral contacts to a 10-nm-thick buried n+-GaAs layer. The contact resistances were substantially temperature independent from 77 to 300 K. Regrown contacts to a 2DEG structure exhibited a much higher and temperature-dependent contact resisitivity which could be accounted for (according to numerical simulation) by ∼5×1012 cm−2 traps at the AlGaAs/ regrown GaAs interface. Post-growth annealing of the regrown annealing of the regrown interface drastically reduced the value of contact resistivity for 2DEG structures to ∼2×10−8 Ω cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103019
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  • 10
    Electronic Resource
    Electronic Resource
    Molecular gas content of the primaeval galaxy IRAS 10214+4724 (1992)
    [s.l.] : Nature Publishing Group
    Nature 356 (1992), S. 318-319 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Monochromatic luminosity L(i〉rest), observed flux S(^obs) and luminosity distance DL are related by6 vrestL(vrest) = 47rDi^obs5(i/obs), where the redshifted frequency */obs = *-Vest/(l + z)- From the measured2, velocity-integrated CO(3 -" 2) line flux, SAu = 21 Jy km s""1, we find that the ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/356318a0
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