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  • 1
    Electronic Resource
    Electronic Resource
    Study of Al3+ binding and conformational properties of the alanine-substituted C-terminal domain of the NF-M protein and its relevance to Alzheimer's disease (1994)
    s.l. : American Chemical Society
    Biochemistry 33 (1994), S. 9627-9636 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00198a031
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  • 2
    Electronic Resource
    Electronic Resource
    Energy and Environmental Policy in China (1991)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Environment and Resources 16 (1991), S. 205-233 
    Details
    ISSN: 1056-3466
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.eg.16.110191.001225
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetism of ultrathin films of Fe on Cu(100) : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5209-5211 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetism in ultrathin (1–10 ML) Fe films grown on Cu(100) has been studied by spin-polarized secondary electron emission spectroscopy. The variation of the magnetization with temperature and oxygen adsorption was investigated for various film thicknesses. The orientation of the magnetization for films between 5 and 6 ML thick switches reversibly between perpendicular (at low temperature) to in-plane (at high temperature). The switching transition temperature decreases with increasing film thickness, and is accompanied by a loss of long-range order over a range of 20–30 K. The transition is attributed to the temperature dependence of the perpendicular anisotropy. The effect of oxygen adsorption onto films with perpendicular remanence is to first suddenly turn the magnetization into the plane at a critical coverage, and then to kill the magnetization gradually with continued exposure. This indicates that the uniaxial surface anisotropy at the Fe-vacuum interface plays a major role in the magnetization of the film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348077
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  • 4
    Electronic Resource
    Electronic Resource
    Interaction of overlayers of Al and Rb with single-crystalline surfaces of Bi2Sr2CaCu2O8 (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2667-2670 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoemission results from Al and Rb interfaces with single crystals of Bi2Sr2CaCu2O8 high-temperature superconductors are reported. The Al and Rb adsorbates are found to react quite differently with the Bi2Sr2CaCu2O8 substrate. While adatoms of Rb significantly affect only the Bi and O atoms in the top atomic layer, the Al adsorbate profoundly disrupts the bonding character of the whole Bi2Sr2CaCu2O8 material. For Al, the Bi and Cu states are strongly reduced, and the Sr and O states show evidence of oxidized components. In addition, Al causes a strong out-diffusion of oxygen from the bulk. The differences in the reactivity of Al and Rb are discussed in terms of the different mobility of the two atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345480
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  • 5
    Electronic Resource
    Electronic Resource
    Electronic structure of the gold/Bi2Sr2CaCu2O8 and gold/EuBa2Cu3O7−δ interfaces as studied by photoemission spectroscopy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 307-309 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution photoemission has been used to probe the electronic structure of the gold/Bi2Sr2CaCu2O8 and gold/EuBa2Cu3O7−δ interface formed by a low-temperature (20 K) gold evaporation on cleaved high quality single crystals. We find that the metallicity of the EuBa2Cu3O7−δ substrate in the near surface region (∼5 A(ring)) is essentially destroyed by the gold deposition, while the near surface region of Bi2Sr2CaCu2O8 remains metallic. This has potentially wide ranging consequences for the applicability of the different types of superconductors in real devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104219
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  • 6
    Electronic Resource
    Electronic Resource
    Search for a proximity effect induced gap in gold/high Tc junctions (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1332-1334 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used high-resolution photoemission spectroscopy to search for a proximity effect induced superconducting gap in gold overlayers on c-axis single crystals of Bi2Sr2CaCu2O8 and a-axis thin films of YBa2Cu3O7. These two junction types give us a representative sampling of very well characterized near-ideal interfaces (gold/c-axis Bi2Sr2CaCu2O8) and junctions in which the geometry more strongly favors the existence of the proximity effect but the interfacial quality may not be as ideal (gold/a-axis YBa2Cu3O7). In neither of these junction types did we observe any evidence for a proximity effect induced gap, and we place an upper limit of approximately 5 meV on its existence in the junctions that we have studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104301
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  • 7
    Electronic Resource
    Electronic Resource
    On certain computable tests and componentwise error bounds (1993)
    Springer
    Computing 50 (1993), S. 353-368 
    Details
    ISSN: 1436-5057
    Keywords: 65G10 ; 65H10 ; 65R20 ; Interval arithmetic ; existence ; uniqueness ; convergence ; componentwise error bounds
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science
    Description / Table of Contents: Zusammenfassung Existenz- und Eindeutigkeitstests von Pandian werden verallgemeinert und in Zusammenhang gebracht mit Ergebnissen von Moore und Kioustelidis sowie von Shen und Neumaire.
    Notes: Abstract Improved forms of the existence and uniqueness tests due to Pandian are given and are related to results due to Moore and Kioustelidis and to Shen and Neumaier.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02243877
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  • 8
    Electronic Resource
    Electronic Resource
    Wall pressure fluctuations in the reattachment region of a supersonic free shear layer (1993)
    Springer
    Experiments in fluids 14 (1993), S. 10-16 
    Details
    ISSN: 1432-1114
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A study was made of the wall pressure fluctuations in the reattachment region of a supersonic free shear layer. The free shear layer was formed by the separation of a Mach 2.9 turbulent boundary layer from a backward facing step. Reattachment occurred on a 20° ramp. By adjusting the position of the ramp, the base pressure at the step was set equal to the freestream pressure, and the free shear layer formed in the absence of any turning. An array of flush-mounted, miniature, high-frequency pressure transducers was used in the vicinity of the reattachment region to make multichannel measurements of the fluctuating wall pressure. Contrary to previous observations of this flow, the reattachment region was found to be highly unsteady, and the pressure fluctuations were found to be large. The overall behavior of the wall pressure loading is similar in scale and magnitude to the unsteadiness of the wall pressure field in compression ramp flows at the same Mach number. Rayleigh scattering was used to visualize the instantaneous shock structure in the streamwise and spanwise direction. Spanwise “wrinkles” on the order of half the boundary layer thickness were observed on the shock sheet.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00196982
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  • 9
    Electronic Resource
    Electronic Resource
    Diallel analysis of tiller number at different growth stages in rice (Oryza sativa L.) (1991)
    Springer
    Theoretical and applied genetics 83 (1991), S. 243-249 
    Details
    ISSN: 1432-2242
    Keywords: Oryza sativa L. ; Inheritance ; Tiller number ; Combining ability ; Gene effects
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary The genetics of tiller number at different development stages in rice was studied in a 6 x 6 diallel cross set involving six indica rice varieties in which a large difference of phenotypes existed. Estimates of genetic parameters following Hayman's method showed significant additive and nonadditive gene action, and the latter appeared to be solely due to dominance. High tillering ability was inherited as a partial dominant character conditioned by two or more blocks of genes, and var ‘H1459’ had more dominant genes, whereas ‘Zhu-Yun-Luo’ had more recessive ones. Combining ability analysis by Griffing's method also indicated significance of both additive and nonadditive effects, but the former was more important than the latter. ‘H1459’ and ‘Bi-Yu-Zao-Luo’ were good general combiners, and their hybrids ‘H1459’ x ‘Le-Yi’ and ‘Zhu-Yun-Luo’ x ‘Bi-Yu-Zao-Luo’ were better crosses for combining an optimum tiller number with high percentage of productive tiller. An identical polygenic system appeared to be responsible for the genetic control of both tiller number at the different growth stages and the terminal character, productive tiller number. However, with growth of the plant, relative contributions of nonadditive gene action and environmental factors to the variation decreased, while those of additive gene action increased. Selection for high tillering ability, therefore, should be exercised at peak tillering or later stages.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00226258
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  • 10
    Electronic Resource
    Electronic Resource
    Surface resistance of large-area Tl2Ba2CaCu2O8 thin films at microwave and millimeter wave frequencies measured by three noncavity techniques (1993)
    Springer
    Journal of superconductivity 6 (1993), S. 191-200 
    Details
    ISSN: 1572-9605
    Keywords: Superconductor ; microwave surface resistance ; measurement techniques ; Tl2Ba2CaCu2O8
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The surface resistanceR s of Tl2Ba2CaCu2O8 films fabricated on LaAlO3 wafers up to 3 inches (7.6 cm) in diameter through a post-deposition anneal process was measured over the frequency range 5.55–94.1 GHz by the following techniques: 5.55 and 27.5 GHz high-temperature superconductor (HTS)-sapphire resonators, 10 GHz parallel plate resonator, and 94.1 GHz scanning confocal resonator.R s was found to exhibit a quadratic dependence on frequencyf at 77 K:R s ∝f 2.0±0.1. The highest-quality films yieldR s =145±15μΩ at 10 GHz and 77 K. Scanning confocal resonator mapping ofR s across a 2-inch (5.1 cm) diameter wafer yielded a base value forR s of 16±1 mΩ at 77 K and 94.1 GHz (equivalent to 180±10μΩ at 10 GHz) and good uniformity inR s across the wafer. HTS-sapphire resonator measurements ofR s for fifteen 1.2 cm square parts cut from a 3-inch diameter wafer yieldedR s values scaled to 10 GHz of 196±10μΩ at 80 K. Similar values were measured for Tl2Ba2CaCu2O8 films prepared on both sides of a 2-inch diameter wafer.Rs values at 10 GHz and 80 K of 147−214μΩ were maintained over the course of 40 independent and successive deposition runs and corresponding anneals under nominally identical film fabrication conditions. Surface resistance at 5.55 GHz remained below 80μΩ for maximum rf magnetic fields up to 85 Oe at 4.2 K and 7 Oe at 80 K, respectively. Results are compared with predictions of the two-fluid model. The relative advantages and disadvantages of the different techniques for measuring surface resistance are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00625746
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