Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
76 (1994), S. 4173-4183
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A physical theory of the bipolar junction transistor which provides closed-form solutions for current/voltage relations for generalized bias conditions is introduced. Included are the new concepts of emitter and collector collection efficiency. Both emitter and collector regions are treated symmetrically to allow for accurate treatment of operation in both the saturation region and the forward-active region, as well as the reverse-active region. There are six components each of emitter and collector current, resulting from inclusion of emitter injection efficiency, surface recombination at the pn junction peripheries, and bulk base recombination as well as finite minority-carrier collection efficiency. Direct comparison between theory and experiment over the entire transistor operating range from deep saturation where IC=0 continuously into the forward-active region where VCE is much greater than the thermal voltage VT shows excellent agreement.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357371
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