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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 657-659 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-dimensional analysis of the in-plane misfit stress and its elastic relaxation in rectangular patterned heteroepitaxial SiGe/Si multilayer structures on Si substrate is presented. Based on the model of relaxing film stress the distribution of the misfit stress versus distance from the free surface of a multilayered mesa edge is calculated. By superposition of the isolated stress fields of the mesa edges, the biaxial misfit stress distribution in a finite heteroepitaxial thin-film structure on thick substrate is obtained. The formalism developed permits the determination of the variation of misfit stress values as a function of material and size characteristics of the patterned multilayer-substrate system. An elementary application of the theoretical analysis of the biaxial state of stress existing in the structured layer system is discussed briefly.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4994-5000 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Copper silicide precipitates in silicon by forming elliptical colonies in {110} planes. In strained Ge0.02Si0.98 heteroepitaxial layers on (001) silicon substrates the colonies prefer {110} planes intersecting the surface under an angle of 45° with zero strain and avoid {110} planes perpendicular to the surface with maximum compressive strain. For the first time copper silicide precipitate colonies lying in (001) surrounded by Lomer dislocations have been observed and studied in detail. They are due to the maximum tensile strain in the [001] direction. The ordering of colonies increases as long as no relaxation via misfit dislocations occurs. The depth of the defect zone containing copper silicide precipitate colonies in the substrate wafer increases with the thickness of a thermal oxide layer on its surface. After annealing in nitrogen the copper silicide precipitate zone remains constant. The morphology of the copper precipitate colonies is first of all determined by the stress of the studied layer system and only to a less extent by the available silicon self-interstitials. Copper silicide precipitate colonies grow below a relaxing heteroepitaxial layer in a patterned arrangement that corresponds to the arrangement of the misfit dislocations. The elastic strain of the heteroepitaxial layer strongly influences the accumulation of copper impurities in the silicon substrate. The smaller the distance between the misfit dislocations becomes, the smaller is the depth of the defect zone containing copper silicide precipitate colonies.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6576-6579 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In these studies the gettering efficiency of copper at a direct bonded interface is compared to the gettering efficiency of a bulk defect zone formed during a one step and three step annealing process of Czochralski silicon wafers. The gettering efficiency of a bulk defect zone is considerably higher than that of the interface. Thus intrinsic gettering is expected to be effective in gettering direct bonded p-n junctions. Without any intrinsic gettering zone, copper silicide readily precipitates at the bonded interface, forming complex star-shaped colonies. Their morphology changes into single colonies in {110} planes if the wafer pairs are prestressed during contacting at room temperature. In this case the gettering efficiency of the bonded interface increases in comparison to the bulk defect zone. Prestressing experiments have shown that the denuded zone width in tensile stressed regions of a wafer increases.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3081-3087 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The determination of the first-order anisotropy field strength using the torsion pendulum method is described. Since the applied field need not necessarily be in the range of the anisotropy field, this method is particularly useful for characterizing modern permanent magnet materials which have a very high uniaxial anisotropy. The method requires oriented samples. Measurements were made on polycrystalline samples of NdFeB, SmCo, and barium ferrite. The method is described and error sources are discussed. It is pointed out that the torsion pendulum method is closely related to reversible transverse susceptibility measurements. It is shown both experimentally and theoretically, that using susceptibility measurements similar results can be obtained. The susceptibility method is, however, not applicable to conducting materials at present.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5512-5516 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a three-dimensional vector vibrating sample magnetometer the magnetization reversal behavior of obliquely evaporated Co-Ni-O layers (metal-evaporated tapes) is studied. It is found that the direction of preferred magnetization is tilted out of the film plane. In addition, the measurements show that the projection of the axis of preferred magnetization into the film plane does not coincide with the direction of tape motion in general. This is caused by the geometry of the evaporation process.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2656-2658 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a two-dimensional analysis of the in-plane misfit stress and its elastic relaxation in rectangular patterned heteroepitaxial SiGe structures on the Si substrate. Based on the generally acknowledged model of relaxing film stress we calculate the distribution of the misfit stress versus distance from the free surface of a mesa edge. By superposition of the isolated stress fields of the mesa edges, we obtain the biaxial misfit stress distribution in a finite heteroepitaxial SiGe mesa on silicon substrate. The formalism developed permits the determination of the variation of stress values as a function of material and size characteristics of the patterned layer-substrate system. A main result of this letter is that the elastic misfit stress is relaxed appreciably in small square SiGe/Si mesa structures, but not in a narrow/long pattern. Furthermore, the theoretical analysis can be applied to most of the pseudomorphic and heteroepitaxial material systems of current interest.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1218-1220 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an alternate model for metastable strain relaxation in heteroepitaxial semiconductor structures which includes the elastic interaction between misfit dislocations. The concept of the self-stress of straight misfit dislocations lying in the interface in two orthogonal arrays is introduced and applied to standard expressions for the residual in-plane epitaxial film stress of noninteracting dislocations. Our model of plastic flow and work hardening in strained layer heterostructures agrees well with the experimental work. The theoretical analysis can be applied to most of the pseudomorphic and heteroepitaxial material systems of current interest.
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Plant, cell & environment 15 (1992), S. 0 
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: A pressure collar, assembled around 25cm sections of 4-year-old willow twigs, was used to examine cavitation events under field conditions. When the air pressure inside the collar was raised to between 1–8 and 2–8MPa, ultrasound acoustic emission signals were triggered which indicated the breaking of water columns in the xylem. The hydraulic conductivity of the twig portion inside the chamber decreased markedly. As a result, water potentials and conductances in leaves at the end of the twig decreased. Similar changes were induced at comparable pressures in detached twigs. The equipment used is described in detail, and evidence is presented that the mechanism of this artificial production of emboli follows the air-seeding principle hypothesized for natural cavitation events.
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of fish biology 36 (1990), S. 0 
    ISSN: 1095-8649
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Attempts were made to find methods for the staining of fish otoliths which would give results comparable to those of the Christensen burning technique. A variety of different histological stains and otoliths of different species were experimented with. Otoliths of sole, turbot, brill and scad gave best results when sectioned and stained in acidified Neutral Red, whereas those of cod, hake, whiting, plaice and grey mullet showed up the annuli better when dyed in aqueous Aniline Blue or Toluidine Blue and then sectioned. Small, translucent otoliths such as those of pelagic species may be enhanced by staining in Eosin Y.
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 5 (1994), S. 503-506 
    ISSN: 1573-4838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine , Technology
    Notes: This paper reports the findings of a finite element analysis applied to the study of ceramic femoral ball heads. The objective of carrying out these analyses was to assess the shape design and loading conditions applied to specific femoral heads and to capture the stress fields developed when they are subjected to idealized test conditions. Two designs were considered, these being the existing Biolox keyhole shape, manufactured by Cerasiv, Medical Products Division and an alternative design with a flat top internal hole. For each of these designs, three load cases and two types of frictional contact were considered. It is shown that the key hole shape with full taper contact conditions together with the higher value of surface friction produce the lowest tensile stress fields in the ball head hence increasing mechanical reliability.
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