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  • 1
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    Single-Crystal Epitaxial Thin Films of the Isotropic Metallic Oxides Sr1-xCaxRuO3 (0 le x le 1) (1992)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1992-12-11
    Description: Single-crystal epitaxial thin films of the isotropic metallic oxides Sr1-xCaxRuO(3) (0 〈/= x 〈/= 1) were grown on miscut SrTiO(3)(100) substrates in situ by 90 degrees off-axis sputtering. These thin films exhibit low isotropic resistivities, excellent chemical and thermal stability, good surface smoothness, and high crystalline quality. Furthermore, the lattice parameters and magnetic properties can be varied by simply changing the strontium/calcium ratio. These epitaxial thin films, and their multilayer structures with other oxide materials, can be used for the fabrication of superconducting, ferroelectric, magneto-optic, and electro-optic devices.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Eom, C B -- Cava, R J -- Fleming, R M -- Phillips, J M -- Vandover, R B -- Marshall, J H -- Hsu, J W -- Krajewski, J J -- Peck, W F Jr -- New York, N.Y. -- Science. 1992 Dec 11;258(5089):1766-9.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/17831659" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 2
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    Structural chemistry and the local charge picture of copper oxide superconductors (1990)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1990-02-09
    Description: The crystal structures of the known copper oxide superconductors are described, with particular emphasis on the manner in which they fall into structural families. The local charge picture, a framework for understanding the influence of chemical composition, stoichiometry, and doping on the electrical properties of complex structures, is also described.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Cava, R J -- New York, N.Y. -- Science. 1990 Feb 9;247(4943):656-62.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/17771881" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 3
    Electronic Resource
    Electronic Resource
    Transparent conducting thin films of GaInO3 (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 115-117 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaInO3 is recently identified transparent conducting material which is structurally and chemically distinct from indium tin oxide [R. J. Cava, J. M. Phillips, J. Kwo, G. A. Thomas, R. B. van Dover, S. A. Carter, J. J. Krajewski, W. F. Peck, Jr., J. H. Marshall, and D. H. Rapkine, Appl. Phys. Lett. 64, 2071 (1994)]. We have used both dc reactive sputtering in the on- and off-axis geometries and pulsed laser deposition to grow films of this material. Layers of pure GaInO3 as well as those partially substituted with Ge for Ga or Sn for In have been studied. Both growth techniques are capable of producing films with conductivity ∼400 (Ω cm)−1 and transmission as high as 90% throughout the visible spectrum for ∼1-μm-thick films. The growth techniques differ in the morphology of the films produced as well as in the degree of dopant incorporation that can be achieved. A post-growth anneal in H2 can help produce an optimized oxygen content and a reduction of resistivity. Hall measurements indicate a carrier concentration up to 4×1020 cm−3 for all films and a Hall mobility up to 10 cm2/(V s). Doping appears to be due both to oxygen vacancies and aliovalent ion substitution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113052
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  • 4
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance in layered magnetic compounds (invited) (abstract) : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5332-5332 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Some stable compounds form in layered structures, in which magnetically ordered planes alternate with planes that are essentially nonmagnetic or disordered. SmMn2Ge2, for example, consists of planes of ferromagnetically aligned Mn2 separated by a SmGe2 structure (with the Sm moments disordered). Between 90 and 150 K, alternate Mn2 planes align antiferromagnetically, but can be rotated into overall ferromagnetic alignment by a moderate field (2–15 kOe). This is a classic metamagnetic behavior. A first-order structural phase transition accompanies the magnetic transition; it consists of a dilation of the c-axis lattice parameter and contraction of the a-axis lattice parameter with no discernable change in crystal symmetry. We have found that a 4%–8% change in the resistivity is associated with the magnetic transition, which may be related to band-structure effects as well as the elimination of the interlayer magnetic scattering channel. Since these are well-annealed, equilibrium compounds, they allow the study of this scattering channel in the limit of zero layer roughness (unlike thin film multilayers). The use of arc-grown single crystals allows us to measure the anisotropic response of the compounds: for example, the resistivity anisotropy of SmMn2 Ge2 is ρc/ρa∼25, and the AFM-FM transition is found to decrease ρc while it increases ρa. The study of this and similar layered structures serves as a complement to the study of artificial thin film magnetic multilayers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353769
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  • 5
    Electronic Resource
    Electronic Resource
    Easy-axis transition in SmMn2Ge2 (abstract) : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6603-6603 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SmMn2Ge2 is a layered ferromagnet with unusual magnetic and electrical properties. In some regards it is a natural analog to artifically layered thin film materials, and its study can provide valuable insights. SmMn2Ge2 is ferromagnetic from 0 to 90 K, with easy axes parallel to the (110) directions (FM1 state). Between 90 and 150 K it is antiferromagnetic, and from 150 K to Tc (340 K) it is again ferromagnetic, with an easy axis parallel to the (001) direction (FM2 state). We have used a continuous recording torque magnetometer to monitor the energy surface of SmMn2Ge2 as a function of temperature. We have found that the moments are parallel to (110) in the AFM state, and that the anisotropy constant varies continuously, i.e., that K→0 at the easy-axis transition, which is found to be at essentially the same temperature as the zero-field AFM/FM2 transition. The FM1/AFM and AFM/FM2 transition temperatures can be varied over a wide range by substitution on the various sites. Substitution of Y or Gd on the Sm site increases TAFM/FM2 strongly, and is found to increase the temperature of the easy axis transition, but not by precisely the same factor. Substitution of a small amount of Cr on the Mn site decreases TAFM/FM2 but appears to have no effect on the easy-axis transition. M-H curves and M-T curves taken in a vibrating sample magnetometer and in a SQUID magnetometer provide corroborating evidence for these conclusions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356910
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  • 6
    Electronic Resource
    Electronic Resource
    Fabrication and properties of epitaxial ferroelectric heterostructures with (SrRuO3) isotropic metallic oxide electrodes (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2570-2572 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial ferroelectric SrRuO3/Pb(Zr0.52Ti0.48)O3/SrRuO3 heterostructures have been fabricated employing isotropic metallic oxide electrodes on (100) SrTiO3 and (100) Si with an yttria stabilized zirconia buffer layer. The structures have been grown in situ by 90° off-axis sputtering, which allows the growth of uniform stoichiometric films over large areas with excellent step coverage. X-ray diffraction, Rutherford backscattering spectroscopy, and cross-sectional transmission electron microscopy reveal high crystalline quality and coherent interfaces. They exhibit superior fatigue characteristics over those made with metal electrodes, showing little degradation over 1010 cycles, with a large remnant polarization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110436
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  • 7
    Electronic Resource
    Electronic Resource
    Electronic structure of BaSn1−xSbxO3, for 0.0≤x≤0.2 (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 830-832 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Mössbauer effect of the 37.2 keV transition of 121Sb and the 23.88 keV γ transition of 119Sn has been employed to study the electronic configuration of Sb and Sn ions in the conducting materials BaSn1−xSbxO3 for 0≤x≤0.2. A single-resonance absorption line is observed for each isotope. The isomer shifts change slightly with Sb content and fall in the region corresponding to Sb(V) and Sn(IV) valence states, respectively. The Sb isomer shift (IS) of 7.5 mm/s is significantly depressed (∼1 mm/s) relative to its value in a typical Sb(V)O6 chromophore and indicates a high degree of covalency, corresponding to significant 5sm5pn hybridization. The Sn IS of 0.1 mm/s indicates that the Sn atoms in BaSn1−xSbxO3 are more covalent than in BaSnO3. Charge disproportionation of the Sn and Sb into Sn(II) and Sn(IV) or Sb(III) and Sb(V) has not been observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106528
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  • 8
    Electronic Resource
    Electronic Resource
    Electronic structure of Sb in perovskite superconducting compounds (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2848-2850 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Mössbauer effect of the 37.2 keV γ transition of 121Sb has been employed to study the electronic configuration of Sb ions in perovskite superconducting materials. The isomer shift (IS) changes with Sb content and falls in the region of the Sb(V) valence state. The IS increases from 7.00 mm/s for BaPb0.75Sb0.25O3 to 7.25 mm/s for BaPb0.75Bi0.25O3 and to 7.70 mm/s for (Ba0.6K0.4)BiO3 compounds, indicating a high degree of covalency, corresponding to changes in the 5sm5pn hybridization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104755
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  • 9
    Electronic Resource
    Electronic Resource
    Electronic structure of Sb in BaPb1−xSbxO3 superconducting compounds (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2339-2341 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Mössbauer effect of the 37.2 keV γ transition of 121Sb has been employed to study the electronic configuration of Sb ions in BaPb1−xSbxO3 superconducting materials. The isomer shift is constant as a function of Sb content and falls in the region correspoding to the Sb(V) valence state. The isomer shift of 7 mm/s is the lowest value yet observed for an Sb(V)O6 chromophore and indicates a high degree of covalency, corresponding to significant 5sm 5pn hybridization. The mixed valence state of an equal amount of Sb(III) and Sb(V) has not been observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103248
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  • 10
    Electronic Resource
    Electronic Resource
    GaInO3: A new transparent conducting oxide (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2071-2072 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaInO3, a layered material with the β Ga2O3 crystal structure, can be doped with electrons through the introduction of oxygen deficiency, Sn doping for In, or Ge doping for Ga. At atomic doping levels of 10% or less, resistivities as low as 3 mΩ cm are obtained. In contrast to polycrystalline indium tin oxide (ITO), which is distinctly green, conductive gallium indium oxide is light grey with no visible coloration. Thin films of doped GaInO3 display good transparency over the whole optical window, superior to that of ITO in the green-blue region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111686
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