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  • 1
    Electronic Resource
    Electronic Resource
    Book reviews (1994)
    Springer
    Pure and applied geophysics 143 (1994), S. 753-780 
    Details
    ISSN: 1420-9136
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00879508
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  • 2
    Electronic Resource
    Electronic Resource
    Book reviews (1994)
    Springer
    Pure and applied geophysics 142 (1994), S. 407-412 
    Details
    ISSN: 1420-9136
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00879312
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical transport properties of Cu3Ge thin films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1616-1619 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resistivity, Hall-effect, and magnetoresistance measurements have been performed in the temperature range 4.2–300 K on thin films of the ε1-Cu3Ge phase that has a long-range ordered monoclinic crystal structure. The results show that ε1-Cu3Ge is a metal with a room-temperature resistivity of ∼6 μΩ cm. The temperature dependence of resistivity follows the Block-Grüneisen model with a Debye temperature of 240±25 K. The density of charge carriers, which are predominantly holes, is ∼8×1022/cm3 and is independent of temperature and film thickness. The Hall mobility at 4.2 K is ∼ 132 cm2/V s. The elastic mean free path is found to be ∼1200 A(ring), which is surprisingly large for a metallic compound film. The results show that the residual resistivity is dominated by surface scattering rather than grain-boundary scattering. An increase in Ge concentration above 25 at. % (but less than 35 at. %) is found to affect the resistivity and Hall mobility, but not the density of charge carriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356400
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  • 4
    Electronic Resource
    Electronic Resource
    Optical constants and electrical transport parameters of HfSi2 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7645-7650 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: HfSi2 polycrystalline thin films, grown by coevaporation of Hf and Si and subsequently annealed at 850 °C, were studied by electrical resistivity measurements (from 10 to 900 K), Hall voltage (from 10 to 300 K), and optical reflectance (at room temperature) from 5 meV to 12 eV. Composition and structure of the films were investigated by Rutherford backscattering spectroscopy and x-ray diffraction. HfSi2 is metallic with (i) a high residual resistivity, (ii) a phonon contribution to the resistivity showing a negative deviation from linearity, and (iii) low-energy interband transitions. Transport measurements yielded a Debye temperature of 430 K, a free-carrier concentration of ∼4×1021 cm−3, and a mean free path of 139 A(ring). The reflectivity was Kramers–Kronig transformed to obtain the dielectric functions which, at low energies, are discussed in term of the Drude model. The optical parameters agree quite well with transport results, thus permitting one to obtain a reasonable value for the Fermi velocity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347535
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical and optical characterization of GdSi2 and ErSi2 alloy thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3393-3399 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GdSi2 and ErSi2 polycrystalline thin films were studied using electrical resistivity in the temperature range 10–900 K, Hall effect from 10–300 K and reflectivity spectra from 0.2–100 μm at room temperature. Composition and structure in these films were investigated by Rutherford backscattering spectroscopy and x-ray diffraction techniques. These silicides are metallic with (i) a remarkable difference in their residual resistivity, (ii) a phonon contribution to the resistivity which showed a negative deviation linearity, and (iii) low energy interband transitions. Resistivity data indicated that GdSi2 and ErSi2 have a Debye temperature of 328 and 300 K respectively and a limiting resistivity value much higher than that observed in other transition metal disilicides. The charge carrier concentration was estimated to be 4×1021 cm−3 at room temperature according to Hall measurements, and the mean free path was 63 A(ring) and 320 A(ring) for GdSi2 and ErSi2, respectively, at 10 K. The parameters obtained by the optical analysis are in good agreement with those extracted from the transport measurements, thus permitting one to obtain a reasonable value for the Fermi velocity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345351
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  • 6
    Electronic Resource
    Electronic Resource
    Assessment of possible peak accelerations through stochastic variations (1991)
    Oxford, UK : Blackwell Publishing Ltd
    Terra nova 3 (1991), S. 0 
    Details
    ISSN: 1365-3121
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: A method is presented for the estimation of possible maximum accelerations, as well as of other accelerogram or seismogram characteristics, based on the stochastic variation of the spectral phase of pulses from an observed time series of interest, possibly the ‘design earthquake’. For a seismic source with the same spectral amplitude the variations are caused by slight differences in source time function, source or receiver location, etc.A large number of variations define the range of possible time series, as well as clear and stable relationships between the standard deviations of phase variation distributions (here considered Gaussian) and possible values of the studied features, as well as their distributions and probabilities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3121.1991.tb00146.x
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  • 7
    Electronic Resource
    Electronic Resource
    Seismic activity related to the 1991 eruption of Colima Volcano, Mexico (1994)
    Springer
    Bulletin of volcanology 56 (1994), S. 228-237 
    Details
    ISSN: 1432-0819
    Keywords: Colima Volcano ; Mexico ; volcanic earthquakes ; harmonic tremors ; volcanic hazard ; monitoring of volcanos ; correlation of eruptive and seismic activities
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences
    Notes: Abstract Ten years after the last effusive eruption and at least 15 years of seismic quiescence, volcanic seismic activity started at Colima volcano on 14 February 1991, with a seismic crisis which reached counts of more than 100 per day and showed a diversity of earthquake types. Four other distinct seismic crises followed, before a mild effusive eruption in April 1991. The second crisis preceded the extrusion of an andesitic scoriaceous lava lobe, first reported on 1 March; during this crisis an interesting temporary concentration of seismic foci below the crater was observed shortly before the extrusion was detected. The third crisis was constituted by shallow seismicity, featuring possible mild degassing explosion-induced activity in the form of hiccups (episodes of simple wavelets that repeat with diminishing amplitude), and accompanied by increased fumarolic activity. The growth of the new lava dome was accompanied by changing seismicity. On 16 April during the fifth crisis which consisted of some relatively large, shallow, volcanic earthquakes and numerous avalanches of older dome material, part of the newly extruded dome, which had grown towards the edge of the old dome, collapsed, producing the largest avalanches and ash flows. Afterwards, block lava began to flow slowly along the SW flank of the volcano, generating frequent small incandescent avalanches. The seismicity associated with the stages of this eruptive activity shows some interesting features: most earthquake foci were located north of the summit, some of them relatively deep (7–11 km below the summit level), underneath the saddle between the Colima and the older Nevado volcanoes. An apparently seismic quiet region appears between 4 and 7 km below the summit level. In June, harmonic tremors were detected for the first time, but no changes in the eruptive activity could be correlated with them. After June, the seismicity decreasing trend was established, and the effusive activity stopped on September 1991.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00279608
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  • 8
    Electronic Resource
    Electronic Resource
    Seismic activity related to the 1991 eruption of Colima Volcano, Mexico (1994)
    Springer
    Bulletin of volcanology 56 (1994), S. 228-237 
    Details
    ISSN: 1432-0819
    Keywords: Key words: Colima Volcano ; Mexico ; volcanic earthquakes ; harmonic tremors ; volcanic hazard ; monitoring of volcanos ; correlation of eruptive and seismic activities.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences
    Notes: Abstract. Ten years after the last effusive eruption and at least 15 years of seismic quiescence, volcanic seismic activity started at Colima volcano on 14 February 1991, with a seismic crisis which reached counts of more than 100 per day and showed a diversity of earthquake types. Four other distinct seismic crises followed, before a mild effusive eruption in April 1991. The second crisis preceded the extrusion of an andesitic scoriaceous lava lobe, first reported on 1 March; during this crisis an interesting temporary concentration of seismic foci below the crater was observed shortly before the extrusion was detected. The third crisis was constituted by shallow seismicity, featuring possible mild degassing explosion-induced activity in the form of hiccups (episodes of simple wavelets that repeat with diminishing amplitude), and accompanied by increased fumarolic activity. The growth of the new lava dome was accompanied by changing seismicity. On 16 April during the fifth crisis which consisted of some relatively large, shallow, volcanic earthquakes and numerous avalanches of older dome material, part of the newly extruded dome, which had grown towards the edge of the old dome, collapsed, producing the largest avalanches and ash flows. Afterwards, block lava began to flow slowly along the SW flank of the volcano, generating frequent small incandescent avalanches. The seismicity associated with the stages of this eruptive activity shows some interesting features: most earthquake foci were located north of the summit, some of them relatively deep (7–11 km below the summit level), underneath the saddle between the Colima and the older Nevado volcanoes. An apparently seismic quiet region appears between 4 and 7 km below the summit level. In June, harmonic tremors were detected for the first time, but no changes in the eruptive activity could be correlated with them. After June, the seismicity decreasing trend was established, and the effusive activity stopped on September 1991.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004450050032
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  • 9
    Electronic Resource
    Electronic Resource
    Influence of annealing temperature on structural, electrical and optical properties of WSi2 (1992)
    Springer
    Applied physics 54 (1992), S. 181-185 
    Details
    ISSN: 1432-0630
    Keywords: 81.40.Tv ; 81.40.Rs ; 78.65.Ez
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract WSi2 polycrystalline films of different thicknesses were prepared by low pressure chemical vapor deposition on silicon wafers, and their crystallization properties were studied as a function of the annealing temperature. Structural measurements were performed by X-ray diffraction, detailing for the first time the phase transition from the amorphous to the hexagonal structure at an annealing temperature 380° C and from hexagonal to tetragonal above 700° C. The electrical sheet resistance showed the same transition temperatures. Optical characterization was performed by spectroscopic ellipsometry, and the real and imaginary part of the complex refractive index were obtained as a function of the annealing temperature in the 0.25–0.9 μm wavelength range. A broad optical band was found for samples annealed up to 700° C, while for higher annealing temperatures a transparency region for wavelengths greater than 0.5 μm and some significant structures appear. A corresponding behavior was observed in the infrared reflectance spectra. Furthermore, it was shown that the determination of the thickness of SiO2 grown on WSi2 requires a multilayer model, taking into account the transparency of tetragonal WSi2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323908
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  • 10
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    Assessment of possible peak accelerations through stochastic variations (1991)
    Wiley
    Details
    Publication Date: 1991-05-01
    Print ISSN: 0954-4879
    Electronic ISSN: 1365-3121
    Topics: Geosciences
    Published by Wiley
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