ISSN:
1600-5724
Source:
Crystallography Journals Online : IUCR Backfile Archive 1948-2001
Topics:
Chemistry and Pharmacology
,
Geosciences
,
Physics
Notes:
A new type of Pendellösung fringe, which is induced by X-ray resonant scattering, is measured for several reflections of Ge. This is an extension of a previous study on the GaAs 600 reflection near the Ga K-absorption edge. The energy resolution is much improved, especially by use of synchrotron radiation. The measured profiles of the fringe agree well with the theoretical ones, which in turn makes it possible to determine the anomalous scattering factors f′ from the fringes near the absorption edge. The obtained f′ values are in good agreement with reported theoretical ones.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1107/S0108767390008157
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