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  • 1
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    In:  Phys. Earth Plan. Int., Amsterdam, Elsevier Scientific Publishing Company, vol. 61, no. 9, pp. 238-252, pp. 2265, (ISSN: 1340-4202)
    Publication Date: 1990
    Keywords: AnisotropyS ; Seismology ; Fault plane solution, focal mechanism ; Shear waves ; PEPI
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  • 2
    ISSN: 1432-1793
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Electron microscopical observations on algal samples collected in 1992 in the middle or final stages of a red tide in Hiroshima Bay, Japan, revealed virus-like particles (VLPs) in the red tide alga Heterosigma akashiwo (Class Raphidophyceae). The host cells appeared moribund and the VLPs were located in and around the nuclear area. The VLPs were icosahedral, ca. 185 nm in diameter, and generated from the periphery of several viroplasms. VLPs were also observed in three other types of H. akashiwo-like cells, which were morphologically distinguishable from each other. The appearance of VLPs in the red tide alga could explain the dramatically rapid termination of this red tide.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 588 (1990), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 858-864 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In1−xGaxSb1−yBiy (0〈x≤0.21, 0〈y≤0.005) quaternary bulk single crystals were grown on InSb seed crystals using a rotary Bridgman method. In order to investigate the quality of these crystals, various kinds of measurements were carried out, such as optical microscope, x-ray topograph, four-crystal x-ray diffractometry, electron-probe microanalysis, energy-dispersive spectroscopy, and secondary-ion-mass spectroscopy. All grown crystals were 10 mm in diameter and more than 10 mm in length. This indicates that the rotary Bridgman method was useful to grow quaternary bulk single crystals. Owing to segregation, the compositional ratio of Bi (y) increased and that of Ga (x) decreased as crystals grew. During growth of InGaSbBi, both Ga and Bi diffused into the InSb seed and there appeared domains of InBi. For comparison, InSb1−yBiy (0〈y≤0.05) and In1−xGaxSb (0〈x≤0.16) were grown on InSb. It turned out that Bi did not diffuse into InSb without Ga, but Ga diffused without Bi. The incorporation of Ga produced the excess In and as a result InBi domains were formed.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5187-5189 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The hard x-ray photoacoustic signal intensities of copper have been measured at an x-ray absorption near-edge structure (XANES) region as functions of sample thickness (from 5 to 300 μm) and modulation frequency (from 5 to 50 Hz). It is shown that the photoacoustic signal intensities show maxima at the sample thickness close to 10 μm for each modulation frequency. The x-ray photoacoustic signal varies from f−1.0 ( f denotes modulation frequency) up to 20 μm sample thickness, whereas it varies from f−0.5 beyond a 20 μm sample thickness, which is not consistent with the Rosencwaig–Gersho theory for the photoacoustic effect in solids.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 182-184 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crystals with varied composition were pulled by the As-partial-pressure controlled liquid encapsulated Czochralski method. The dislocation density was found to be as low as 2×103 cm−2 at the cores of the crystals. Lattice spacing (d) was measured with a precision of Δd/d ∼ 5.9 × 10−6 using synchrotron radiation. For a variation of 7×10−5 in the As-atom fraction in the crystals, the lattice spacing varied by less than 1×10−5 A(ring).
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3578-3583 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to investigate the role of the Eu2+ luminescent centers in determining the electro-optical characteristics of red-emitting CaS:Eu thin-film electroluminescent (TFEL) devices with inherent memory, light irradiation effects on these characteristics were studied. Both the threshold voltage and the response time decreased by light irradiation at wavelengths of 400–600 nm. This wavelength region coincides with that of the direct-excitation spectrum of Eu2+. Furthermore, emission peak height at the trailing edge of the pulse drive voltage increased by light irradiation in the same wavelength region. Since this emission is assumed to be caused by recombination of diffusing electrons with holes located at the ionized Eu2+ luminescent centers, increase in the emission peak height at the trailing edge of the pulse drive voltage indicated an increase in the number of the ionized Eu2+ luminescent centers. From these arguments we conclude that ionized Eu2+ luminescent center is a possible source of positive space-charge, which is known to play a decisive role in the memory and response characteristics of TFEL devices.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed a high resolution monochromatic x-ray computed tomography system using synchrotron radiation in the energy range up to 50 keV. The system was installed in a vertical wiggler beamline (BL14C) at the Photon Factory of the National Laboratory for High Energy Physics, and consists of a double-crystal monochromator employing asymmetric Bragg reflections, a photodiode array detector with a phosphor screen, and a microcomputer for control. Computed tomography (CT) images with a pixel size of 6 to 8 μm and with a slice width ranging from 20 to 100 μm were obtained. An image subtraction technique for CT images above and below the x-ray absorption edge of iodine was also evaluated for liquid-containing glass capillaries. Since the CT value (pixel weighting) is linearly proportional to the concentration, the system can quantitatively evaluate the concentration distribution of iodine. These results indicate that the system is very useful for nondestructively evaluating fine structures and their constituent elements.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An x-ray spectrometer has been designed and constructed for Compton scattering measurements using 40–70 keV x-rays from an ellipsoid multipole wiggler (EMPW) installed in the accumulation ring of the National Laboratory for High Energy Physics at Tsukuba. The spectrometer has four sets of a Cauchois-type energy analyzer and an imaging plate, which are arranged on the surface of a cone and share a scattering angle of 160°. In each energy-analyzing system, to increase signal to noise ratio a set of vertical and horizontal slits are inserted between the analyzer and the imaging plate. A resolution of 0.13 a.u. in terms of electron momentum was achieved. A Compton profile of a vanadium single crystal was measured with an integrated counting rate of 400 counts/s.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5018-5024 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to clarify causes of the slow buildup of the optical output, i.e., slow optical response, in red-emitting CaS:Eu thin-film electroluminescent devices, Eu2+ concentration and temperature dependence of the response time of transferred electrons were measured. It was found that the response time increased exponentially with the increase in Eu2+ concentration and temperature. To understand these results, trapping states in CaS:Eu phosphor layer were studied by measuring temperature dependence of the following electro-optical characteristics with Eu2+ concentration as a parameter; (i) decay profile of trapped electrons, (ii) photoluminescent intensity, and (iii) photoinduced charge density. From these measurements, it was found that there existed two kinds of shallow states in the band gap of CaS. One was electron trapping states located at approximately 0.15 eV below the conduction-band minimum. These states were considered to be generated by Eu2+ clusters. The other was located at 0.06–0.08 eV below the conduction-band minimum. These states were considered to be 5d-excited states of isolated Eu2+ activators. Based on these experimental results, an energy band model for CaS:Eu thin film was proposed and causes for the slow optical response were discussed.
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