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  • 1
    Electronic Resource
    Electronic Resource
    The tungsten-tungsten triple bond. 19. Preparation and characterization of W26+-containing compounds supported by amide/alkoxide and trifluoromethanesulfonate ligands (1992)
    s.l. : American Chemical Society
    Inorganic chemistry 31 (1992), S. 4469-4474 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic00048a007
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  • 2
    Electronic Resource
    Electronic Resource
    Impurity distribution and electrical characteristics of boron-doped Si1−x Ge x /Si p +/N heterojunction diodes produced using pulsed UV-laser-induced epitaxy and Gas-immersion laser doping (1993)
    Springer
    Applied physics 57 (1993), S. 91-95 
    Details
    ISSN: 1432-0630
    Keywords: 73.40.Lq ; 73.61.Le ; 85.30.Kk
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A two-step pulsed UV-laser process which independently controls the metallurgical and electrical junction depth of a Si1−x Ge x /Si heterojunction diode has been implemented. Pulsed Laser-Induced Epitaxy (PLIE) combined with Gas-immersion Laser Doping (GILD) are used to fabricate boron-doped heteroepitaxial p +/N Si1−x Ge x /Si layers and diodes. Borontrifluoride is used as the gaseous dopant source in the GILD process step. Boron incorporation and activation are investigated as a function of laser energy fluence and the number of laser pulses using SIMS and Halleffect measurements. The dose of incorporated dopant is on the order of 1013 cm−2 per pulse. The B profiles obtained are flat except for a peak at the interface resulting from segregation effects. The B and Ge distributions are compared with shifts in the turn-on voltage of p +/N Si1−x /Si heterojunction diodes produced by the process. The GILD/PLIE process is spatially selective with the resulting diodes fabricated being quasiplanar. Hole mobilities in the heavily doped Si1−x Ge x films are found to be slightly lower than in comparable Si films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331223
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  • 3
    Electronic Resource
    Electronic Resource
    Heteroepitaxial Si/Si1−xGex/Si structures produced using pulsed UV-laser processing (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1709-1711 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality heteroepitaxial regrowth of arsenic-implanted a-Si on Si1−xGex layers with Ge fractions between 0 and 0.2 is accomplished using pulsed laser induced epitaxy (PLIE). The structures of boron-doped Si1−xGex on Si(100) are created beforehand using a combination of (PLIE) and gas immersion laser doping. A small amount of Ge and B backdiffusion from the Si1−xGex film into the top Si layer is observed. During the laser pulse, the implanted arsenic diffuses up to the maximum melt depth so that melt depth and junction depth coincide. The a-Si is sputter deposited to a thickness of 900 A(ring), and the As is implanted to a dose of 5×1014 cm−2 at 40 keV. A single XeCl excimer laser pulse with an energy fluence to be selected between 0.6 and 0.8 J/cm2 is sufficient to heteroepitaxially regrow the a-Si and activate the implanted arsenic.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112893
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  • 4
    Electronic Resource
    Electronic Resource
    Pulsed laser assisted epitaxy of GexSi1−x alloys on Si 〈100〉 (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3455-3457 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial quality of GexSi1−x films grown on Si〈100〉 by a novel laser-assisted technique has been investigated for compositions in the range x≤0.37 and thicknesses between 50 and 500 nm. Epitaxy is induced during electron beam deposition of GexSi1−x films on Si substrates by pulses of an excimer laser operating at 308 nm with 30 ns pulse duration. Good epitaxial growth is obtained for 50 nm films for x≤0.04 on chemically cleaned Si(100) surfaces even in the presence of substantial fluorine coverage. Using a predeposition/crystallization of a 50 nm pure-Si buffer layer, good epitaxy is then obtained in 50 nm films for x=0.05–0.13. At x=0.07, defect-free alloys have been grown up to thicknesses of 0.5 μm. However, for films with compositions above 19 at.% Ge, dislocations at a nearly constant density of ≈10 μm/μm2 are observed. This uniform density suggests a breakdown mechanism other than simple strain relaxation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105676
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  • 5
    Electronic Resource
    Electronic Resource
    Crystallinity, strain, and thermal stability of heteroepitaxial Si1−xGex/Si (100) layers created using pulsed laser induced epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 769-771 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxy of Si1−xGex/Si alloy layers on Si (100) substrates has been achieved using pulsed laser induced epitaxy (PLIE). The energy of 1 to 20 pulses from a spatially homogenized XeCl excimer laser beam is used to melt a structure consisting of electron-beam evaporated Ge on Si (100) substrates. Alloy films with different Ge fractions are investigated and films with up to 21% Ge content are found to exhibit excellent crystallinity, as confirmed by MeV-ion channeling along the 〈100〉 direction. MeV-ion channeling is also used to determine the level of strain in the layers. This is done by comparing angular yield curves around the 〈110〉 direction for the substrate and alloy layer. The strain values obtained match with calculations for an ideally strained layer state. The strain is also measured for layers that have been subjected to different thermal cycles. A high level of strain is preserved in the alloy layer even after heating to 950 °C for 1 h. This unusual thermal stability is believed to be due to two process features, the ultrarapid nature of the process and the interfacial grading of the Ge fraction created during the melt-regrowth process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107793
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  • 6
    Electronic Resource
    Electronic Resource
    Demonstration of laser-assisted epitaxial deposition of GexSi1−x alloys on single-crystal Si (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1768-1770 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report initial results of a novel technique for epitaxial growth of GexSi1−x alloys on single-crystal Si. During electron beam deposition of amorphous GexSi1−x, an incident XeCl excimer laser, operating at 308 nm with a 30 ns pulse duration, melts and crystallizes the amorphous layer in situ after each ≈5 nm of deposition. This laser-induced melt extends approximately 20 nm and provides epitaxy from the underlying substrate (or previous layers) at each stage of deposition. This melt/solidification process can be repeated continuously until the final desired alloy thickness is achieved. For layers up to 260 nm with Ge concentrations of 1.5–3 at. %, MeV ion channeling and cross-sectional transmission electron microscopy confirm epitaxial growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105085
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  • 7
    Electronic Resource
    Electronic Resource
    Insect Cuticle Sclerotization (1992)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Entomology 37 (1992), S. 273-302 
    Details
    ISSN: 0066-4170
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.en.37.010192.001421
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  • 8
    Electronic Resource
    Electronic Resource
    A modelling analysis of the effects of climatic warming on the probability of spring frost damage to tree species in The Netherlands and Germany (1994)
    Oxford, UK : Blackwell Publishing Ltd
    Plant, cell & environment 17 (1994), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Two studies presented in the literature (Murray, Canned & Smith 1989; Hanninen 1991) evaluate the effect of increasing winter temperature on the probability of spring frost damage to trees, but yield contradictory results. It is unclear whether the disparity can be ascribed to the fact that different models were used, or is the result of different climatic warming scenarios being used, or is because the tree species at the different locations do indeed respond differently to warmer winters. To evaluate the effects of climatic warming to tree species in The Netherlands and in Germany, both models were fitted to long series of observations on the date of leaf unfolding of eleven tree species. The impact of the two scenarios (uniformly and non-uniformly changing winter temperature) on the date of leaf unfolding and on the probability of freezing temperature around that date was evaluated. To test the importance of adaptation to local climate, hypothetical provenance transfers were analysed. It was concluded that, for tree species in The Netherlands and Germany, the probability of spring frost damage will decrease. The contradictory results found in the literature could be ascribed to differences between provenances adapted to their local climate, and is not because different models and different climatic warming scenarios were used in these studies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3040.1994.tb00305.x
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  • 9
    Electronic Resource
    Electronic Resource
    Avidin and streptavidin as insecticidal and growth inhibiting dietary proteins (1993)
    Springer
    Entomologia experimentalis et applicata 69 (1993), S. 97-108 
    Details
    ISSN: 1570-7458
    Keywords: avidin ; streptavidin ; biotin ; insecticide ; stored product insects ; corn borer ; beetles ; moths ; plant resistance
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Avidin was found to be an insecticidal and growth inhibiting dietary protein for five species of Coleoptera (red flour beetle,Tribolium castaneum, confused flour beetle,T. confusum, sawtoothed grain beetle,Oryzaphilus surinamensis, rice weevil,Sitophilus oryzae, and lesser grain borer,Rhyzopertha dominica) and two species of Lepidoptera (European corn borer,Ostrinia nubilalis, and Indianmeal moth,Plodia interpunctella). At levels ranging from 10 to 1000 ppm in the diet depending on the species, avidin retarded the growth and caused mortality of all seven species. Addition of biotin to the avidin-treated diets forT. castaneum, T. confusum, R. dominica, andO. nubilalis prevented the growth inhibition and mortality caused by avidin. Streptavidin exhibited similar insecticidal and growth inhibiting activity towardsT. castaneum andO. nubilalis. The results support the hypothesis that feeding avidin or streptavidin to insects causes a biotin deficiency which in turn leads to stunted growth and mortality. Avidin and streptavidin are insect growth inhibiting proteins whose genes potentially could be manipulated into plants and provide host plant resistance to insect pests.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02380637
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  • 10
    Electronic Resource
    Electronic Resource
    Catecholamines and related o-diphenols in cockroach hemolymph and cuticle during sclerotization and melanization: comparative studies on the order Dictyoptera (1990)
    Springer
    Journal of comparative physiology 160 (1990), S. 175-181 
    Details
    ISSN: 1432-136X
    Keywords: Cockroaches ; Catecholamines ; Diphenols ; Cuticle ; Hemolymph ; Selerotization ; Melanization ; Pigmentation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary Catecholamines and related o-diphenols extracted from the cuticle and hemolymph of adult cockroaches during sclerotization and pigmentation of the cuticle were analyzed by reverse phase HPLC with electrochemical detection. At ecdysis, dopamine (DA) oconjugates predominated in the hemolymph of Periplaneta americana, P. australasiae, P. fuliginosa, P. brunnea, and Blatta orientalis (Blattidae); Blattella germanica (Blattellidae); and Gromphadorhina portentosa and Blaberus craniifer (Blaberidae). n-Acetyldopamine (NADA) conjugates were second in abundance in these species, but were major in the hemolymph of the other blaberoid species, Leucophaea maderae and Nauphoeta cinerea. After ecdysis NADA became the major hemolymph catecholamine in all species as DA decreased rapidly. n-β-Alanyldopamine (NBAD) concentrations in the hemolymph remained low in all species, although NBAD and its metabolite, n-β-alanylnorepinephrine (NBANE), were generally the major catecholamines in tanning cuticle. Catechol (1,2-dihydroxybenzene) occurred mainly as a conjugate(s) at high levels in the hemolymph of nymphs and adults of all blattid species. Only trace amounts were detected in B. germanica and Cryptocercus punctulatus (Cryptocercidae), and none was found in any of the blaberoid species. High concentrations of NBANE and NBAD accumulated in tanning cuticle of B. germanica, G. portentosa, and all blattid species, whereas NADA and DA predominated in cuticle from the other blaberoid species, particularly L. maderae and N. cinerea. However, cockroaches as a group appear to utilize both the n-acetyl and n-β-alanyl catecholamines for stabilization of the exoskeleton. The Blattidae differed most from the other families in having considerably higher concentrations of catecholamines in hemolymph and cuticle, as well as the large amounts of catechol conjugates in the hemolymph.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00300950
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