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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2692-2699 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and optical properties of n-type and p-type epitaxial GaAs layers have been studied after MeV implantation of heavy (Xe and Er) ions. All implanted layers were highly resistive immediately after implantation. Annealing to only moderate temperature (725 °C) recovered the as-grown electrical properties of beryllium-doped p-type layers. However, after annealing silicon-doped n-type layers, we observe a dramatic change from the as-grown carrier profiles. After anneal, the silicon-doped, n-type layers became conductive but the carrier profiles were markedly different from the as-grown material. A significant thickness of the implanted portion of the epitaxial layers shows distinct p-type conductivity after annealing. We have correlated this p-type activity with a transfer of silicon from the gallium sublattice (SiGa) to the arsenic sublattice (SiAs). The site transfer is viewed to result from the altered thermodynamics governing site occupancy during annealing of Si in GaAs under the unique damage conditions produced by heavy ion MeV implantation. Additionally, the observed thermal stability of the site transfer process above 875 °C may have implications for implantation isolation techniques.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7774-7778 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si, Ge, and Be implantations were performed into (x11)A-oriented semi-insulating InP and GaAs substrates for x≤4. For comparison some of the implantations were also performed into (110)- and (100)-oriented substrates. For 200 keV/5×1013 cm−2 Si and 200 keV/3×1013 cm−2 Ge implants after 850 °C/7 s annealing, the InP is always n type with similar sheet resistance independent of the substrate orientation. No in-diffusion of Si or Ge was observed after annealing for any substrate orientation. Similar behavior was observed for Si implants in GaAs and for Si/B co-implants in both InP and GaAs. Photoluminescence measurements were performed on the Si- and Si/B-implanted InP and GaAs. For 30 keV/1.5×1014 cm−2 Be implants in both InP and GaAs, the in-diffusion of Be in (311)A-oriented substrates is less compared to the (100) material.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2136-2138 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Steady state and time resolved photoluminescence studies of type IIb boron-doped synthetic diamond reveal a new broad red emission band that exhibits many of the features of classic donor–acceptor pair recombination. This recombination is thought to be between an as-yet unidentified neutral donor, possibly nitrogen related, approximately 3.6 eV below the conduction band edge and neutral boron acceptors at 0.37 eV above the valence band edge.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 502-504 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of post-implantation annealing have been studied in MeV Er-implanted GaAs by monitoring the Er3+ electron paramagnetic resonance (EPR) signal as well as the Er3+ and near-band-edge photoluminescence (PL) spectra as a function of the anneal temperature. Er3+ PL is observed from several distinct Er sites in the annealed material. In addition, the observed dependences upon anneal temperature suggest that the Er3+ PL is emitted from centers that are not in the Er3+ state at equilibrium. Absolute EPR measurements of the Er3+ concentration indicate that only a small fraction (〈0.1%) of the Er in the sample is Er3+.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 6
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    London : Periodicals Archive Online (PAO)
    Journal of the Economic and Social History of the Orient. 34 (1991) 365 
    ISSN: 0022-4995
    Topics: Ethnic Sciences , History , Sociology , Economics
    Description / Table of Contents: INDIAN SUBCONTINENT
    Notes: SUBJECTS
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  • 7
    ISSN: 1432-0983
    Keywords: Mutagen resistance ; DNA sequencing ; Transmembrane protein ; Gene disruption
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary SNQ1 gene function is required for the expression of resistance to 4NQO in wild-type yeast. The sequence of a 3.7 kb yeast DNA containing the gene SNQ1 was determined. The SNQ1 gene consists of an open reading frame of 1641 bp and encodes, according to the hydrophobicity analysis of the putative protein, a transmembrane protein of 547 amino acids. Homology searches in yeast genome databanks revealed a 100% sequence homology with gene ATR1 which controls resistance to aminotriazole in S. cerevisiae. Pre-treatment of wild-type yeast, but not of snq1-0::LEU2 disruption mutants, with sublethal doses of aminotriazole induced hyper-resistance to 4-nitroquinoline-N-oxide. Partial deletion of the nucleotide sequence coding for a putative ATP-binding site has no, or little, influence on resistance to 4NQO whereas total deletion of the region coding for this ATP-binding domain leads to 4NQO-sensitive nullmutants.
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  • 8
    ISSN: 1572-9982
    Source: Springer Online Journal Archives 1860-2000
    Topics: Economics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 26 (1991), S. 5149-5154 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Zirconium fluoride (ZrF4)-based glass preforms made by the rotational casting process were treated prior to fibre drawing to eliminate pre-existing defects. Emphasis was given to the removal of external defects by different surface preparation methods which include mechanical polishing, and chemical etching in 0.2m H3BO3 solution as well as microwave-assisted plasma fluorination. The strength of the fibres was measured using both bending and dynamic loading tests. Fluorine exposure increased the median tensile strength by an additional 20%. As expected, the Weibull distribution for bending tests was shifted to the higher strength range, and was generally a factor of two more than in the dynamic tensile measurements.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 0021-9541
    Keywords: Life and Medical Sciences ; Cell & Developmental Biology
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Biology , Medicine
    Notes: The tissue distribution of P-glycoprotein (Pgp) and the structurally related cystic fibrosis transmembrane conductance regulator (CFTR) is apparently mutually exclusive, particularly in epithelia; where one protein is expressed the other is not. To study the possible function(s) of Pgp and its potential effects on CFTR expression in epithelia, HT-29 colon adenocarcinoma cells, which constitutively express CFTR, were pharmacologically adapted to express the classical multidrug resistance (MDR) phenotype (Pgp+). Concomitant with the appearance of Pgp and MDR phenotype (drug resistance, reduced drug accumulation and increased drug efflux), CFTR levels and cAMP-stimulated Cl conductances were markedly decreased compared to wild-type HT-29 (Pgp-) cells (as shown using the whole cell patch clamp technique). Removal of drug pressure led to the gradual decrease in Pgp levels and MDR phenotype, as evidenced by increased rhodamine 123 accumulation (Pgp-Rev). Concomitantly, CFTR levels and cAMP-stimulated Cl- conductances incresed. The cell responses of Pgp/Rev cells were heterogeneous with respect to both Pgp and CFTR functions. We also studied the possible contribution of Pgp to hypotonically activated (HCS) ion conductances. K+ and Cl- effluxes from Pgp- cells were markedly increased by HCS. This increase was twice as high as that induced by the cation ionophore gramicidin; it was blocked by the Cl- channel blocker DIDS (4,4′-disothiocyano-2,2′-disulfonic stilbene) and required extracellular Ca2+. In Pgp+ cells, the HCS-induced fluxes were not significantly different from those of Pgp- cells. Verapamil (10 μM), which caused 80% reversal of Pgp-associated drug extrusion, failed to inhibit the HCS-evoked Cl- efflux of Pgp+ cells. Similarly, HCS increased Cl- conductance to the same extent in Pgp-, Pgp+ and Pgp-Rev cells. Verapamil (100 μM), but not 1,9-dideoxyforskolin (50 and 100 μM), partially inhibited the HCS-evoked whole cell current (WCC) in all three lines. Since the inhibition by verapamil was not detected in the presence of the K+ channel blocker Ba2+ (3 mM), it is suggested that verapamil affects K+ and not Cl- conductance. We conclude that hypotonically activated Cl- and K+ conductances are similar in HT-29 cells irrespective of Pgp expression. Expression of high levels of Pgp in HT-29 cells confers no physiologically significant capacity for cell volume regulation. © 1994 Wiley-Liss, Inc.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
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