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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6443-6443 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferrite plating facilitates the formation of polycrystalline spinel films in an aqueous solution below 100 °C. The plating temperature can be extended up to 200 °C when the pressure of the reaction solution is kept high (15–20 kgf/cm2). We call this "hydrothermal ferrite plating,'' by which solubility limit of Ni in Fe3−xNixO4 increases much, from x=0.3 (by conventional ferrite plating at 90 °C) to x=0.93.1 In this paper we describe preparation of Fe3−xCoxO4 films by the hydrothermal ferrite plating at T=120–200 °C and p=15–40 kgf/cm2, and report their structural and magnetic properties. Plating for 1 h, we obtained films about 1 μm in thickness, which are polycrystalline with no preferential crystal orientation as observed by x-ray diffraction. The solubility limit of Co, which is x=0.6 at 90 °C, increases to x=1.3 at 180 °C. The solubility limit of Co is higher than that of Ni, which may be because Ni tends to keep 2+ state in the spinel structure, while Co can take both 2+ and 3+ states. When prepared at 200 °C, the saturation magnetization of the films are smaller than that reported for bulk samples, though both agree when the films are prepared at 90 °C.2 This suggests that Co is oxidized to 3+ state even when x〈1.0 as large as the Fe3−xCoxO4 films are prepared in the hydrothermal conditions. We found that adding CH3COONH4 into the reaction solution as a pH buffer improves the smoothness of the film surface.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5911-5914 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline spinel ferrite films were plated on glass substrates in an aqueous solution by the thin liquid-film method combined with an electric lamp, which was named "light-enhanced ferrite plating.'' By irradiating the substrate surface with a Xe lamp (450 W/cm2), the deposition rate of Fe3O4 films increased by a factor of ∼5–10 (from 30 to 150–320 nm/min) compared to that obtained without the light irradiation. The Fe3O4 film prepared in a reaction solution with a small FeCl2 concentration had a structure (i.e., grain size ∼200 nm, and columnar structure perpendicular to the film surface) similar to that observed when prepared without the light irradiation. However, the grain size increased and the columnar structure disappeared as the FeCl2 concentration increased. The deposition rate of Fe3−xMxO4 (M=Ni, Mn, Co, and Zn) was 50–100 nm/min and increased by a factor of 2–5 compared to that without the light irradiation. The saturation magnetization of the all films prepared with the light irradiation agrees with the value of the bulk samples.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5915-5917 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high-vacancy-content ferrites represented by x(MFe2O4)⋅y(Fe3O4)⋅z(γ-Fe2O3), where x+y+z=1 (z(approximately-greater-than)0.50), were obtained in the clear and strongly alkaline solutions of Fe(III) and M(II) tartrate [M(II)=Zn(II), Ni(II), and Cd(II)] or dextrose at 100 °C. The vacancies were replaced with the bivalent metal ions in the reaction solutions, and the replaced number increased with an increase in the concentration of the bivalent metal ions. The ferrite particle size was dependent on the bivalent metal species and the content (x,y). The Fe(II) ions enhanced the crystal-growth rate. The particle size of the magnetites (x=0) increased from 100 to 800 A(ring) with an increase in the Fe(II) ion content (y=0.10–0.35). The high-vacancy-content magnetite was transferred from superparamagnetic to ferrimagnetic particles as the size increased. The Zn(II), Ni(II), and Cd(II) ions did not enhance the growth rate so much as compared to the Fe(II) ions. The particle sizes were less than 200 A(ring), and most of the particles were superparamagnetic. The saturation magnetizations were lower than the theoretical values, and increased with an increase in the particle size, indicating the surface effect.
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The molecular-beam epitaxial growth conditions for (InAs)m(GaAs)n short period superlattices (SPSs) on GaAs substrates have been optimized by monitoring reflection high-energy electron diffraction (RHEED) intensity oscillations. The RHEED oscillation measurements enable understanding InAs growth behavior on a 7% lattice-mismatch GaAs substrate. Within one monolayer InAs deposition with lower than 560 °C growth temperature can give high SPS crystalline quality. The SPS periodic structure and the monolayer InAs formation, embedded in GaAs layers, have been confirmed by x-ray diffraction and transmission electron microscopy measurements. The obtained thickness controllability for the SPSs is less than±6% for InAs and ±3% for GaAs. The electron Hall mobilities for modulation-doped structures having an (InAs)1(GaAs)n SPS as an electron channel, whose layer index of n varied from 3 to 6, have been compared with those with a pseudomorphic InGaAs random alloy channel which has the equivalent In composition. The SPS channel samples have shown up to 15% higher electron Hall mobilities than the InGaAs alloy channel samples at 77 K. A 0.2-μm-gate (InAs)1(GaAs)6 superlattice channel modulation-doped field-effect transistor (FET) has exhibited a maximum extrinsic transconductance of as high as 450 mS/mm with a 70-GHz cut-off frequency at room temperature. The best noise figure of 0.58 dB with an associated gain of 11.15 dB has been attained. The obtained device characteristics are comparable or superior to those for the corresponding InGaAs alloy channel FETs. These results demonstrate, for the first time, the (InAs)m(GaAs)n SPS potentialities as an ordered counterpart for InGaAs random alloy for high-speed device applications.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6284-6286 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline NixZnyFe3−x−yO4 films were prepared by the spin-spray ferrite plating method on oxygen-plasma-treated and non-plasma-treated glass substrates from an aqueous solution at 96 °C. The oxygen-plasma treatment increased film adhesion to the substrate, and enabled films thicker than 15 μm to be grown. A film with composition of (x+y)=0.75 had a saturation magnetization of 103 emu/g, a coercive force of ∼7 (Oe), ferromagnetic resonance linewidth (perpendicular to the film plane) of 80 (Oe), and resistivity of 106 Ω cm. These results compare favorably with ceramics of NiZn ferrite on the market.
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We prepared ferrite films of Fe3O4 and α-Fe2O3 in which Au fine particles (which exhibit catalytic activity for CO→CO2 oxidation) are dispersed by ferrite plating in an aqueous solutions below 100 °C. We used as-reaction solution FeCl2 (Fe2+ + Cl−) and as oxidizing solution HAuCl4 (H+ + AuCl−4). The reduction-oxidation reaction between Fe2+ and AuCl−4 facilitates the ferrite formation and also Au-particle formation reactions. The Au particles were ∼30 nm in diameter. Among all the prepared films an α-Fe2O3 film containing Au fine particles at an atomic ratio Au/Fe=0.12 exhibited the highest oxidation activity, which appeared above 100 °C, and converted the CO gas to CO2 completely at 200 °C.
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  • 7
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Absolutely calibrated measurements of the neutron yield are important for the evaluation of the plasma performance such as the fusion gain Q in D-D operating tokamaks. The time-resolved neutron yield is measured with 235U and 238U fission chambers and 3He proportional counters in the JT-60U tokamak. The in situ calibration was performed by moving the 252Cf neutron source toroidally through the JT-60 vacuum vessel. Detection efficiencies of three 235U and two 3He detectors were measured for 92 locations of the neutron point source in toroidal scans at two different major radii. The total detection efficiency for the torus neutron source was obtained by the averaging the point efficiencies over the whole toroidal angle. The uncertainty of the resulting detection efficiency for the plasma neutrons is estimated to be ±11%.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 5270-5278 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Absolutely calibrated measurements of the neutron yield are important for the evaluation of plasma performance such as the fusion gain Q in D–D operating tokamaks. The time-resolved neutron yield is measured with 235U and 238U fission chambers and 3He proportional counters in the JT-60U tokamak. The in situ calibration was performed by moving the 252Cf neutron source toroidally through the JT-60 vacuum vessel. Detection efficiencies of three 235U and two 3He detectors were measured for 92 locations of the neutron point source in toroidal scans at two different major radii. The total detection efficiency for the torus neutron source was obtained by averaging the point efficiencies over the whole toroidal angle. The uncertainty of the resulting detection efficiency for the plasma neutrons is estimated to be ±11%.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6094-6096 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Yttrium iron ferrite films of amorphous structure (as examined by x-ray diffraction), having ferromagnetic moment at room temperature, are successfully synthesized from an aqueous solution by a ferrite plating method in which the substrate is heated by Xe-lamp beams. The atomic ratio of Y/Fe in the films is adjusted to Y/Fe=0.6, as in Y3Fe5O12, by properly choosing the atomic ratio (Y/Fe=3.5) in the reaction solution. The magnetization of the films at room temperature is 10–40 emu/cc, several times smaller than that observed for crystalline YIG. It exhibited, however, a paramagnetic Mössbauer spectrum at room temperature, suggesting that the weak magnetization is ascribed to the magnetic impurity phase whose concentration is too small to be discerned by x-ray diffraction and Mössbauer measurements. The spectrum has an isomer shift of 0.22 mm/sec at 300 K and a hyperfine field splitting of 462 kOe at 12 K, indicating that the Fe ions are in a trivalent high spin state.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1592-1597 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ observations of As atoms at step sites of vicinal Si (100) surfaces have been performed by coaxial impact-collision ion scattering spectroscopy. It is found that some As atoms remain at Si step sites even at a high substrate temperature of 780 °C under an As residual pressure, in spite of evaporation of As atoms from terrace sites. This result indicates that As atoms at step sites are energetically more stable than the As dimers on the terrace. Moreover, the angular profiles of the scattering intensity from As atoms at step sites suggest that there is atomic displacement of As atoms towards the Si substrate at the step sites. An atomic model of the As/Si system is proposed from the results of computer simulation for the scattering intensity profiles.
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