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  • 1
    Electronic Resource
    Electronic Resource
    Atomic layer growth of oxide thin films with perovskite-type structure by reactive evaporation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2840-2845 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of BaTiO3 and SrTiO3 films by the reactive evaporation method was investigated using reflection high-energy electron diffraction (RHEED). The investigations were carried out using two growth methods: coevaporation and alternate evaporation of the metal elements in an oxygen atmosphere. Atomic layer growth was achieved by the alternate supply of Ba or Sr and Ti on the growing surface. In the case of coevaporation, epitaxial growth occurred in a two-dimensional unit-cell-by-unit-cell mode. The surface of each unit cell is terminated by a (TiO2) layer. Artificial superlattices of BaTiO3/SrTiO3 were fabricated by monitoring the film thickness with the RHEED oscillations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351536
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial growth and dielectric properties of BaTiO3 films on Pt electrodes by reactive evaporation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7833-7838 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of BaTiO3 have been epitaxially grown on Pt(001)/MgO(100) substrates by reactive evaporation. Structural and electrical properties were investigated as a function of film thickness. In situ reflection high-energy electron diffraction and cross-sectional transmission electron microscope observations have revealed that the BaTiO3 films are epitaxially grown on Pt/MgO substrates from the initial stage without any other phase formation. From the images of an atomic force microscope, it has been found that islands of BaTiO3 are present on the bare Pt surface at the initial stage of deposition; the island structure changes to a continuous layer above 1.2 nm in thickness and BaTiO3 grows in a two-dimensional mode. The lattice parameters and the dielectric properties are dependent on the film thickness. Thermodynamic theory was introduced to explain the thickness dependence of the relative dielectric constant εr. Good agreement between the experimental results and the theoretical calculations leads to the conclusion that the thickness dependencies of the lattice parameters and the dielectric constants are caused by the two-dimensional stress due to the lattice mismatch between Pt and BaTiO3 and/or the difference in the thermal expansion coefficients of BaTiO3 and the MgO substrate. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357891
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  • 3
    Electronic Resource
    Electronic Resource
    Anomalous misfit strain relaxation in ultrathin YBa2Cu3O7−δ epitaxial films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3653-3662 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin YBa2Cu3O7−δ epitaxial films were successfully grown in situ on (001) SrTiO3 and MgO substrates by means of ozone-incorporating activated reactive evaporation. The x-ray-diffraction study was carefully examined to determine the structural properties of the grown films. Excellent crystallinity with no interfacial disorders was revealed by the appearance of the Laue oscillations. It was found that in a well lattice-matched YBa2Cu3O7−δ/SrTiO3 system, the crystallinity was deteriorated due to defect introduction at the critical layer thickness hc ( ∼ 130 A(ring)). Interestingly, also in a poorly lattice-matched YBa2Cu3O7−δ/MgO system, excellent crystallinity was revealed even at above hc ( 〈 24 A(ring)). This implies that an anomalous misfit relaxation process exists in the YBa2Cu3O7−δ/MgO system. In such a system, no crystal imperfection of the MgO substrate caused by defect introduction was elucidated by the grazing incidence x-ray scattering, which indicated that the MgO substrate did not contribute to the anomalous misfit relaxation. The anomalous growth manner was also found in YBa2Cu3O7−δ/MgO according to surface morphology investigations. Below 40 A(ring)( (approximately-greater-than) hc), island nucleation growth was found. Above 40 A(ring), it was observed that an atomically smooth surface was obtained and the crystallinity was simultaneously improved. It is suggested that YBa2Cu3O7−δ possesses an anomalous misfit relaxation mechanism, and that especially in the growth on MgO, it couples with the characteristic growth behavior at the initial stage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348513
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  • 4
    Electronic Resource
    Electronic Resource
    In situ growth of superconducting Nd-Ce-Cu-O thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 677-679 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting Nd-Ce-Cu-O thin films were epitaxially grown on SrTiO3 (100) by activated reactive evaporation. As-grown films showed the metallic temperature dependence of the resistivity and superconducting transition at 12.5 K (R=0). The remarkable parallel shift of the onset temperature of the resistive transition in the magnetic fields was observed. Ginzburg–Landau coherence lengths along the c axis and in the basal plane are 7 and 96 A(ring), respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103309
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  • 5
    Electronic Resource
    Electronic Resource
    Preparation of ferroelectric BaTiO3 thin films by activated reactive evaporation (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 527-529 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric BaTiO3 thin films were directly and epitaxially grown on SrTiO3 single crystal and epitaxial Pt film substrates by activated reactive evaporation. The substrate temperature was around 600 °C. For (100) oriented as-grown films, a typical ferroelectric hysteresis loop and a maximum of dielectric constant at about 115 °C were observed. The resistivity was as high as 109 Ω cm and the breakdown voltage was 2.7 MV/cm for as-grown BaTiO3 films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103300
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  • 6
    Electronic Resource
    Electronic Resource
    Tunneling measurements on superconductor/insulator/superconductor junctions using single-crystal YBa2Cu3O7−x thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 683-685 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have, for the first time, made quasi-particle tunneling measurements on a YBa2Cu3O7−x(001)/Y2O3 (001)/YBa2 Cu3 O7−x (001)junction, which was epitaxially grown on a MgO(100) substrate in an in-situ process. Both layers of YBa2 Cu3 O7−x showed the same superconducting transition of Tc end =86 K with ΔT(R=10–90%)=1.5 K. Quasi-particle tunneling in the direction perpendicular to the Cu-O planes was measured. A gap parameter Δ(4.5 K) of 9.0±0.2 meV and a value of 2Δ/kTc of 3.5+0.4−0.6 were obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103311
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  • 7
    Electronic Resource
    Electronic Resource
    Structure of xanthone (1990)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 46 (1990), S. 1725-1727 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108270190000543
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  • 8
    Electronic Resource
    Electronic Resource
    Somatic chromosome map of rice by imaging methods (1991)
    Springer
    Theoretical and applied genetics 81 (1991), S. 589-596 
    Details
    ISSN: 1432-2242
    Keywords: Rice ; Chromosome map ; Ideogram ; Image analysis ; Condensation pattern
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary Rice somatic chromosomes were completely identified and quantitatively mapped based on an image parameter, condensation pattern (CP), or a chromosomal density profile determined by imaging methods. The CP corresponds to the compactness of the chromatin fibers along the chromatid, which is characteristic in small plant chromosomes such as rice chromosomes at the mitotic pro-metaphase stage. The standard CP for every chromosome was obtained by averaging 60 CPs from 30 chromosome spreads. Each standard CP exhibited a characteristic pattern of the chromosome, which enabled it to be distinguished from the other chromosomes. An ideogram based on the numerical data and the standard CP was established. The chromosomal address was also determined based on the degree of condensation, and the fractional length of each chromosomal address was quantitatively presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00226723
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  • 9
    Electronic Resource
    Electronic Resource
    Identification and characterization of somatic rice chromosomes by imaging methods (1991)
    Springer
    Theoretical and applied genetics 81 (1991), S. 597-605 
    Details
    ISSN: 1432-2242
    Keywords: Rice ; Somatic chromosome ; Condensation pattern ; Karyotype ; Discrimination chart
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary Somatic rice chromosomes from 30 spreads were analyzed by imaging methods. Morphological characters of each of the 12 rice chromosomes were obtained both by the imaging methods and by visual inspection. The numerical data of relative length, arm ratio, and condensation pattern (CP) were statistically analyzed. The descriptive morphological information obtained was also summarized into numbers of “key characters” or essential short sentences to characterize the traits. The fitness probability or the appearing frequencies of the key character for each of the 30 chromosomes was calculated. Altogether, 118 key characters were extracted to distinguish each rice chromosome. Furthermore, several “discriminants” or critical key characters were determined among the key characters, and a discrimination chart or flowchart to identify all the rice chromosomes was constructed using the discriminants.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00226724
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  • 10
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    Reflection high-energy electron diffraction oscillations during epitaxial growth of high-temperature superconducting oxides (1990)
    American Physical Society
    Details
    Publication Date: 1990-11-19
    Print ISSN: 0031-9007
    Electronic ISSN: 1079-7114
    Topics: Physics
    Published by American Physical Society
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