Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
67 (1990), S. 3350-3353
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The InP metal-oxide-semiconductor structure using SiO2 film as an insulator was deposited by mercury-sensitized photoinduced chemical vapor deposition ultilizing a gaseous mixture of silane (SiH4 ) and nitrous oxide (N2 O) under 253.7-nm ultraviolet light irradiation. The structural and electrical properties of the deposited film were then evaluated with emphasis on the substrate temperature dependence. An increase of the substrate temperature (Tsub ) has effects of increasing the refractive index and decreasing the etching rate, oxide charge density, and interface state density. Postoxidation annealing in a N2 environment at 300 °C decreases the interface states as well as the oxide charge.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.345372
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