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  • 1
    Electronic Resource
    Electronic Resource
    Combined therapy with probucol and pravastatin in hypercholesterolaemia (1993)
    Springer
    European journal of clinical pharmacology 44 (1993), S. 535-539 
    Details
    ISSN: 1432-1041
    Keywords: Apolipoproteins ; Hypercholesterolaemia ; Pravastatin ; lipids ; lipoproteins ; probucol
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Notes: Summary The effect of co-administration of low doses of pravastatin to hypercholesterolaemic patients already receiving long-term probucol treatment (mean 500–1,000 mg/day for 350 days) were investigated. Pravastatin 5 mg/day (Group 1; 12m, 13f; mean age 59.1 y) or 10 mg/day (Group 2; 8m, 11f; mean age 60.8 y) was administered, and blood was taken after 0, 3, 6, and 12 months. Both groups showed a significant reduction in serum total cholesterol (TC), phospholipid (PL), low density lipoprotein-cholesterol (LDL-C), LDL-triglyceride (TG), LDL-PL, apolipoprotein (apo) B, and apo E after the combined therapy. These levels were reduced more in Group 2 than in Group 1 subjects. In Group 2, significant falls in serum TG and apo CII were also observed. The changes in TC, PL, LDL-C, apo B, apo CII and apo E were dependent upon the dose of pravastatin, as assessed by two-way analysis of variance. Serum high density lipoprotein (HDL)3-C, apo AI and apo AII were slightly but significantly increased in both groups after 12 months of combined therapy, but the increase was not sufficient to reverse the probucol-induced lowering of the HDL level. We conclude that combined therapy resulted in a significant reduction in atherogenic lipoproteins and apolipoproteins, and an increasing dose of pravastatin (5 mg to 10 mg daily) made the lipid lowering effect more prominent. The reduction in serum HDL-C due to long-term probucol administration was not reversed by the addition of pravastatin.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02440854
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  • 2
    Electronic Resource
    Electronic Resource
    Anomalous misfit strain relaxation in ultrathin YBa2Cu3O7−δ epitaxial films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3653-3662 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin YBa2Cu3O7−δ epitaxial films were successfully grown in situ on (001) SrTiO3 and MgO substrates by means of ozone-incorporating activated reactive evaporation. The x-ray-diffraction study was carefully examined to determine the structural properties of the grown films. Excellent crystallinity with no interfacial disorders was revealed by the appearance of the Laue oscillations. It was found that in a well lattice-matched YBa2Cu3O7−δ/SrTiO3 system, the crystallinity was deteriorated due to defect introduction at the critical layer thickness hc ( ∼ 130 A(ring)). Interestingly, also in a poorly lattice-matched YBa2Cu3O7−δ/MgO system, excellent crystallinity was revealed even at above hc ( 〈 24 A(ring)). This implies that an anomalous misfit relaxation process exists in the YBa2Cu3O7−δ/MgO system. In such a system, no crystal imperfection of the MgO substrate caused by defect introduction was elucidated by the grazing incidence x-ray scattering, which indicated that the MgO substrate did not contribute to the anomalous misfit relaxation. The anomalous growth manner was also found in YBa2Cu3O7−δ/MgO according to surface morphology investigations. Below 40 A(ring)( (approximately-greater-than) hc), island nucleation growth was found. Above 40 A(ring), it was observed that an atomically smooth surface was obtained and the crystallinity was simultaneously improved. It is suggested that YBa2Cu3O7−δ possesses an anomalous misfit relaxation mechanism, and that especially in the growth on MgO, it couples with the characteristic growth behavior at the initial stage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348513
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  • 3
    Electronic Resource
    Electronic Resource
    Measurement of a population inversion on the 551.4-nm transition in an optically pumped Ti vapor laser (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 67-72 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A population inversion density on the Ti 551.4-nm (3D01−3F2) transition in a N2 -laser-pumped Ti-vapor laser has been estimated from measurements of an optical gain on the laser transition, length of the laser medium, and temperature in the vapor to determine the linewidth. Ti vapor is generated by irradiation of a pulsed YAG laser light of 1 J/pulse energy and then the Ti atoms are optically pumped by a N2 laser of 0.2 mJ/cm2 intensity. It has been experimentally observed that, in pure Ti vapor, the population of Ti (3d24s2 3F2) is about 8×1013/cm3, the temperature in the vapor is about 9000 K, the population inversion on the 551.4-nm transition is about 1.5×1011/cm3, and the absorption cross section of the N2 -laser light at 337.044 nm by a Ti atom is 3.0×10−15 cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347658
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  • 4
    Electronic Resource
    Electronic Resource
    Characteristics of an optically pumped titanium vapor laser (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1460-1464 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Characteristics of an optically pumped titanium vapor laser have been investigated on the 3d2 4s(4P)4p 3D01−3d3(4F)4Rs 3F2 transition at 551.4 nm. An excimer laser of 14 mJ/pulse for vaporization and an N2 laser of 5 mJ/pulse for optical pumping are employed. The laser output energy is measured as a function of buffer gas pressure, delay time, output mirror reflectivity, pumping laser intensity, and vaporizing laser intensity. The possibility of lasing on the other transitions is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346674
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  • 5
    Electronic Resource
    Electronic Resource
    Visible laser action in N2-laser-pumped Ti vapor (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5378-5380 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ti vapor is produced in a He buffer gas. Ti metal is irradiated by a pulsed YAG laser, and its vapor is optically pumped by a N2 laser at 337 nm. Laser lines at 551.4, 472.3, and 471.0 nm from the Ti 3D01 level which is connected to the ground state by the 337-nm resonance line. Laser lines are reported for the first time at 551.5, 551.3, 431.5, and 547.4 nm from the 3D02, 3D03, or 3G05 levels which are not optically connected to the ground state by the 337 nm line. The laser transitions from the 3D02, 3D03, or 3G05 levels are observed only in a He-Ti mixture.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347038
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  • 6
    Electronic Resource
    Electronic Resource
    Optically pumped titanium vapor laser at 551.4 nm (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 45-48 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The output characteristics of an optically pumped titanium vapor laser on various buffer gas species and pressures have been measured, and the role of buffer gas on the laser output is accordingly discussed. He, Ne, Ar, and Kr are used as buffer gases. The optimum condition for the maximum output energy is 4 Torr of He with 10 μs delay time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345226
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  • 7
    Electronic Resource
    Electronic Resource
    Amplification by stimulated emission from optically pumped nickel vapor in an ultraviolet region (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1709-1711 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amplification by stimulated emission has been observed from an optically pumped nickel vapor on the transitions at 347 and 381 nm. Nickel vapor was produced by direct laser vaporization, and the nickel atoms were optically pumped by a N2 laser at 337 nm. The amplification factor at 347 nm reaches a maximum after the amplification factor at 381 nm reaches a maximum. The maximum amplification factors are 1.62 and 1.69, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104065
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  • 8
    Electronic Resource
    Electronic Resource
    Epitaxial growth of YBa2Cu3O7 films on GaAs with MgO buffer layers (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1841-1843 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown epitaxial YBa2Cu3O7 films on GaAs using MgO buffer layers similar to Fork, Nashimoto, and Geballe [Appl. Phys. Lett. 60, 1621 (1992)]. However, the YBa2Cu3O7 was deposited by thermal coevaporation at an even lower substrate temperature of 620 °C. We obtained substantially improved quality [Tc=86.8 K, jc(77 K)=1.2×106 A/cm2, ρ(100 K)≤100 μΩ cm] and smooth surfaces free of outgrowth. An important aspect is preventing As contamination from the gas phase. This was achieved by encapsulating the free sample surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108392
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  • 9
    Electronic Resource
    Electronic Resource
    In situ growth of superconducting Nd-Ce-Cu-O thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 677-679 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting Nd-Ce-Cu-O thin films were epitaxially grown on SrTiO3 (100) by activated reactive evaporation. As-grown films showed the metallic temperature dependence of the resistivity and superconducting transition at 12.5 K (R=0). The remarkable parallel shift of the onset temperature of the resistive transition in the magnetic fields was observed. Ginzburg–Landau coherence lengths along the c axis and in the basal plane are 7 and 96 A(ring), respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103309
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  • 10
    Electronic Resource
    Electronic Resource
    Preparation of ferroelectric BaTiO3 thin films by activated reactive evaporation (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 527-529 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric BaTiO3 thin films were directly and epitaxially grown on SrTiO3 single crystal and epitaxial Pt film substrates by activated reactive evaporation. The substrate temperature was around 600 °C. For (100) oriented as-grown films, a typical ferroelectric hysteresis loop and a maximum of dielectric constant at about 115 °C were observed. The resistivity was as high as 109 Ω cm and the breakdown voltage was 2.7 MV/cm for as-grown BaTiO3 films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103300
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