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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 857-859 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A characteristic infrared luminescence band, dominated by a zero-phonon line at 1.30 eV has been consistently detected in gallium nitride (GaN) epitaxial layers. It is assigned to the intra-3d-shell transitions 4T1(G)→6A1(S) of omnipresent iron trace impurities, Fe3+Ga(3d5). Another infrared emission is often also observed at 1.19 eV. This is tentatively assigned to chromium trace impurities, Cr4+Ga(3d2). The role of iron and chromium as minority-carrier lifetime killers in GaN-based optoelectronic devices is suggested from these data.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 304-309 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient capacitance methods were used to analyze traps occurring in unintentionally doped n-type GaN grown by hydride vapor-phase epitaxy. Studies by deep-level transient spectroscopy (DLTS) and isothermal capacitance transient spectroscopy indicated the presence of three majority-carrier traps occurring at discrete energies below the conduction band with activation energies (eV) ΔE1=0.264±0.01, ΔE2=0.580±0.017, and ΔE3=0.665±0.017. The single-crystal films of GaN were grown on GaN formed by metal-organic chemical-vapor deposition and on sputter-deposited ZnO; a similar deep-level structure was found in both types of samples. Pulse-width modulation tests using DLTS to determine the capture rates of the traps showed that the capture process is nonexponential, perhaps due to the high trap concentration. The origins of the deep levels are discussed in light of secondary-ion-mass-spectroscopy analysis and group theory results in the literature.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 771-774 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are reported of electric-field dependence on thermal emission of electrons from the 0.40 eV level at various temperatures in InGaP by means of deep-level transient spectroscopy. The data are analyzed according to the Poole–Frankel emission from the potentials which are assumed to be Coulombic, square well, and Gaussian, respectively. The emission rate from this level is strongly field dependent. It is found that the Gaussian potential model is more reasonable to describe the phosphorus-vacancy-induced potential in InGaP than the Coulombic and square-well ones.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7410-7414 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mobility limited by the scattering of a phosphorous vacancy-induced deep center in In0.5Ga0.5P alloy grown by liquid-phase epitaxy on a (100) GaAs substrate has been investigated by means of Hall mobility and deep-level transient spectroscopy measurements. Two kinds of scattering potentials, Gaussian well type and square-well type, were considered. It was found that the scattering potential can be better described by the Gaussian-type potential than the square-well one. The mobility limited by deep center scattering has been fully calculated and analyzed. As a result, the mobility is characterized by a temperature dependence of T−1/2 in the temperature range from 77 to 400 K. The point defect scattering severely reduces the total mobility as its concentration increases. In addition, the scattering case when there is an electron trapped in the Gaussian potential well was also quantitatively investigated. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2676-2678 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Schottky barrier on unintentionally doped n-type GaN grown by hydride vapor phase epitaxy was obtained and characterized. Using vacuum evaporated gold as the Schottky barrier contact and aluminum for the ohmic contact, good quality diodes were obtained. The forward current ideality factor was n∼1.03 and the reverse bias leak current below 1×10−10 A at a reverse bias of −10 V. The barrier height φBn was determined to be 0.844 and 0.94 eV by current-voltage and capacitance measurements, respectively.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2688-2690 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In hydride vapor phase epitaxial (HVPE) growth of GaN, the sputtered ZnO layer has been found to be one of the best buffer layers because of the fact that physical properties of ZnO are nearly analogous with those of GaN. With a ZnO buffer layer, the reproducibility of growing GaN single crystal by HVPE has been greatly improved. The GaN films grown by this method show excellent crystalline, electrical, and optical properties. In particular, the Hall mobility of 1920 cm2 V−1 s−1 at 120 K is the highest value that has ever been reported by HVPE.
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  • 7
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Concentrated alumina slurries were fluidized in an optimum amount of polyacrylates (PAA) in the content region where a good dispersion was obtained. Dispersion was necessary, but not sufficient for fluidization. The expected role of PAA in the thickening was retention of a water-reducing ability to retain the fluidity. Thickening of the alumina slurry to the limit of retaining the fluidity was achieved by the amount of PAA at which the flow point showed a minimum. The flow of alumina slurries around the limit was approximated by the Bingham model which was characterized by the yield stress and the Bingham viscosity. The flow curves of the slurries containing insufficient PAA had a yield stress which decreased with increasing amount of PAA and disappeared at an optimum amount of PAA to give a minimum flow point. The yield stress again increased retaining the low Bingham viscosity with increasing amount of PAA, to exceed the optimum amount for molecular weights smaller than 10 000. On the other hand, the Bingham viscosity increased without increasing the yield stress with increasing amount of PAA, to exceed the optimum amount for molecular weights larger than 20 000. The effect of PAA on the dispersion and flow behaviour could be explained by the electrostatic stabilization based on the Derjaguin-Landau, Verwey-Overbeek (DLVO) theory for the PAA with a molecular weight smaller than 10 000, and by the steric stabilization for the PAA with a molecular weight larger than 20 000.
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  • 8
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The limit of thickening of an alumina suspension by ammonium polyacrylates (PAA) and its molecular weight dependence of the limit were determined from the lowering of the flow point to be a measure of simultaneous promotion of the thickening and the dispersion. PAA of a smaller molecular weight gave a lower flow point minimum and a thicker alumina suspension retaining fluidity up to 85 wt % alumina for PAA of molecular weight 2500. The suspension thickened to the limit has the smallest gap between the flow point and the wet point, supporting Daniel's statement on good dispersion. The average water layer thickness, calculated by dividing the amount of water of suspension at the limit of thickening by the particle numbers, indicated no linearity with the chain length of the PAA. The thickening for PAA with molecular weights smaller than 21 000 resulted in a limit in the average water layer thickness of ∼30 nm being accompanied by dilatant flow. The suspension at high solid loadings showed various extension features on the glass plate with changes in the PAA concentration around the flow point minimum. The flow behaviour of the alumina suspension around the limit of thickening was characterized by the Bingham model with two parameters of the yield stress, σ0, and the Bingham viscosity, η. Increase in the fluidity on PAA addition was strongly attributed to a greater lowering of σ0 than of η. A balanced ratio between the two parameters in the apparent viscosity under a suitable shear rate was suggested to be necessary for the flow of the castable thick suspension.
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  • 9
    Publication Date: 1993-01-01
    Print ISSN: 0022-2461
    Electronic ISSN: 1573-4803
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Published by Springer
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  • 10
    Publication Date: 1994-12-01
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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