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  • 1990-1994  (4)
  • 1
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    Unknown
    InAs/GaAs and InAs doping superlattices (1990)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: The extension of the optical response of narrow band gap III-V semiconductors into the long wavelength infrared radiation (LWIR) regime for high sensitivity sensor applications is a challenging problem. Recent advances in nipi doped GaAs superlattices, lattice mismatched epitaxy and the heteroepitaxial growth of III-V compound semiconductors on silicon substrates offer a number of opportunities. Researchers describe two different device approaches based on the molecular beam epitaxy (MBE) growth of superlattice materials which are directed to LWIR focal plane array technology. The first of these uses nipi superlattices fabricated in bulk InAs which has been grown on either GaAs or Si substrates. The second is based on the growth of a new pseudomorphic tetragonal phase of InAs on GaAs to create a semimetal/semiconductor superlattice material.
    Keywords: SPACECRAFT INSTRUMENTATION
    Type: Innovative Long Wavelength Infrared Detector Workshop Proceedings; p 463-478
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 2
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    Unknown
    MBE growth technology for high quality strained III-V layers (1990)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: The III-V films are grown on large automatically perfect terraces of III-V substrates which have a different lattice constant, with temperature and Group III and V arrival rates chosen to give a Group III element stable surface. The growth is pulsed to inhibit Group III metal accumulation of low temperature, and to permit the film to relax to equilibrium. The method of the invention: (1) minimizes starting step density on sample surface; (2) deposits InAs and GaAs using an interrupted growth mode (0.25 to 2 monolayers at a time); (3) maintains the instantaneous surface stoichiometry during growth (As-stable for GaAs, In-stable for InAs); and (4) uses time-resolved RHEED to achieve aspects (1) through (3).
    Keywords: SOLID-STATE PHYSICS
    Type: NAS 1.71:NPO-17723-1-CU
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 3
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    Unknown
    Growth of III-V films by control of MBE growth front stoichiometry (1992)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: For the growth of strain-layer materials and high quality single and multiple quantum wells, the instantaneous control of growth front stoichiometry is critical. The process of the invention adjusts the offset or phase of molecular beam epitaxy (MBE) control shutters to program the instantaneous arrival or flux rate of In and As4 reactants to grow InAs. The interrupted growth of first In, then As4, is also a key feature.
    Keywords: SOLID-STATE PHYSICS
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 4
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    Unknown
    MBE growth technology for high quality strained III-V layers (1992)
    In:  CASI
    Details
    Publication Date: 2019-08-28
    Description: III-V films are grown on large automatically perfect terraces of III-V substrates which have a different lattice constant, with temperature and Group II and V arrival rates chosen to give a Group III element stable surface. The growth is pulsed to inhibit Group III metal accumulation to low temperature, and to permit the film to relax to equilibrium. The method of the invention 1) minimizes starting step density on sample surface; 2) deposits InAs and GaAs using an interrupted growth mode (0.25 to 2 mono-layers at a time); 3) maintains the instantaneous surface stoichiometry during growth (As-stable for GaAs, In-stable for InAs); and 4) uses time-resolved RHEED to achieve aspects (1)-14 (3).
    Keywords: Solid-State Physics
    Format: application/pdf
    Location Call Number Expected Availability
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    NASA TECHNICAL REPORTS
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