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  • 1990-1994  (50)
  • 1
    Electronic Resource
    Electronic Resource
    DLTS of High-Resistivity Si (1991)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 19-20 (Jan. 1991), p. 493-498 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.19-20.493.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Defect Engineering in Submicron CMOS Technologies (1991)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 19-20 (Jan. 1991), p. 95-108 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.19-20.95.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Hot-Carrier degradation of the Random Telegraph Signal amplitude in submicrometer Si MOSTs (1993)
    Springer
    Applied physics 57 (1993), S. 283-289 
    Details
    ISSN: 1432-0630
    Keywords: 85.30.Tv ; 72.70.+m
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper studies the Hot-Carrier (HC) degradation of submicrometer Si MOSTs by the changes in the Random Telegraph Signal (RTS) parameters. It is demonstrated that the amplitude of a pre-existing RTS is markedly changed after stress. In linear operation, a reduction is generally observed for n-MOSTs, while an increase is found for p-MOSTs. For larger drain voltages, the changes are most pronounced in reverse operation, i.e. with source and drain switched, for a forward stress. Hence, the trap-amplitude asymmetry increases after stress. As is demonstrated, there exists a close correlation between the observed changes in the RTS amplitude and in the static device parameters. A simple, first-order model is derived, showing that the HC stress-induced reduction (n-channel), or increase (p-channel) is proportional to the variation of the oxide/interface charge density near the drain. Alternatively, it is demonstrated that the normalized change in the RTS amplitude is equal to the normalized conductance change of the narrow hot-carrier damaged region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00332604
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  • 4
    Electronic Resource
    Electronic Resource
    A study of the kink-related excess low-frequency noise in silicon- on-insulator n-metal-oxide-semiconductor transistors operated at liquid helium temperatures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1416-1422 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, the drain voltage dependence of the low-frequency (lf) noise of partially depleted silicon-on-insulator n-metal-oxide-semiconductor-transistors (n-MOSTs) is investigated in detail at liquid helium temperature. As will be shown, an increase in the noise spectral density is observed at the kink position, similar to bulk n-MOSTs operated at 4.2 K. This excess noise introduces a Lorentzian generation-recombination (GR) component in the lf noise spectrum. The physical mechanism underlying the GR noise is thought to be the same as for bulk transistors: ionization and capture in the depletion region of carriers, which are created at the drain. This generates a fluctuation in the depletion charge, which is translated into a fluctuation of the drain current via a change in the threshold voltage. A model will be proposed that is derived from the analysis previously established for the bulk case. Extension of the model to fully depleted, thin-film transistors and to higher temperatures (77 K, 300 K) will be briefly outlined. As will be demonstrated, a good overall agreement between theory and experiment is obtained whereby the key features of the noise overshoot, i.e., its position and amplitude, are consistently reproduced.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351701
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  • 5
    Electronic Resource
    Electronic Resource
    Random telegraph signals in silicon-on-insulator metal-oxide- semiconductor transistors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3647-3653 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Possible physical mechanisms for random telegraph signal (RTS) -like fluctuations in the front-channel drain current of a silicon-on-insulator (SOI) metal-oxide-semiconductor (MOS) transistor are discussed. Particular emphasis is on two RTS mechanisms which are believed to be typical for a SOI MOS transistor. The first one is related to carrier trapping in the Si film, by a deep-level trap in the depletion region. As such, this type of RTS is more or less complementary to the standard behavior, which is caused by carrier trapping through a near-interface oxide trap. Second, it is demonstrated experimentally that by varying the back-gate bias of a thin-film SOI MOS transistor "new'' RTSs may be detected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356079
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  • 6
    Electronic Resource
    Electronic Resource
    The hysteresis and transient behavior of Si metal-oxide-semiconductor transistors at 4.2 K. II. Prekink clockwise hysteresis regime (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3074-3081 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The experimental transient behavior of Si metal-oxide-semiconductor transistors (MOSTs) operated at liquid-helium temperatures in the prekink, clockwise hysteresis regime is described in detail. As is shown, the drain current exhibits a pronounced decay, after switching on the device, both in n- and pMOSTs. The effective "exponential'' time constant τ of the transient is in the order of seconds to hundreds of seconds and is a strong function of the gate, the drain, and the substrate biases. Generally, a strong reduction of τ with increasing drain current is observed. These findings are critically discussed in view of the dominant dopant ionization mechanisms at 4.2 K. It is demonstrated that the reported drain current dependence of the transient time constant can be interpreted by considering shallow-level impact ionization by the channel carriers. It is furthermore demonstrated that the anomalous transients occasionally observed point to the occurrence of the reverse process, namely capture of free carriers. By considering these two mechanisms, a comprehensive model for the prekink hysteresis behavior is established.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352991
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  • 7
    Electronic Resource
    Electronic Resource
    The hysteresis and transient behavior of Si metal-oxide-semiconductor transistors at 4.2 K. I. The kink-related counterclockwise hysteresis regime (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3068-3073 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The experimental hysteresis behavior of Si metal-oxide-semiconductor transistors (MOSTs) operated at liquid-helium temperatures (LHT) is described in detail. It is demonstrated that two different hysteresis regimes can be distinguished: a kink-related counterclockwise and a prekink clockwise regime. The difference in hysteresis sense is related to the different physical mechanisms underlying the phenomena. It is demonstrated that there exists a strong relationship between the hysteresis and the transient behavior of a Si MOST at 4.2 K. The possible transient mechanisms, e.g., self-heating or dopant ionization, are critically reviewed. The transient results presented are in line with the field-assisted ionization of the frozen-out dopant atoms in the Si substrate. For the counterclockwise hysteresis regime an improved analysis is presented, which is based on the original forced depletion layer formation approach. In the companion article the transient behavior in the prekink, clockwise regime is described in detail and discussed in view of the different possible dopant ionization mechanisms at LHT.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352990
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  • 8
    Electronic Resource
    Electronic Resource
    The behavior of silicon p-n junction-based devices at liquid helium temperatures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1016-1024 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, the forward current-voltage (I-V) characteristics of Si p-n junction diodes, fabricated in different state-of-the-art complementary-metal-oxide-semiconductor (CMOS) technologies, are investigated at liquid helium temperatures. As will be shown, three different I-V regimes can exist: a forward breakdown/hysteresis regime at a turn-on voltage which may be larger than the built-in potential of the junction; a thermionic emission regime, corresponding to a I=A exp(qV/kT) relation and a high-injection space-charge-limited regime, giving rise to a current which is proportional to Vn. The anomalous turn-on behavior can be explained by considering the small barrier for carrier injection, which exists at the "ohmic'' contact. It will be demonstrated that the presence of this forward breakdown is strongly determined by the fabrication technology used. In extreme cases (large-area well diodes) multiple breakdown is observed, indicating an inhomogeneous, filamentary current flow. As will be shown, similar breakdown behavior is observed in more complex junction-based Si devices at 4.2 K; the consequences for deep-cryogenic CMOS circuitry will be briefly addressed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349683
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  • 9
    Electronic Resource
    Electronic Resource
    The charge transport in a silicon resistor at liquid-helium temperatures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4091-4099 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple, one-dimensional model describing the steady-state charge transport in a silicon n+nn+ (p+pp+) resistor at liquid-helium temperatures is derived. This model includes both space-charge and (contact) barrier limitations to the current flow, typically occurring at these temperatures (T〈30 K) in Si. Furthermore, account is made for the interactions between the injected free carriers and the shallow doping atoms, i.e., mainly trapping and shallow level impact ionization, yielding breakdown of the material at rather low electrical fields F. Good qualitative agreement with measured current-voltage characteristics is found. In addition, the model is able to describe the flow of avalanche-generated current through the substrate/well of a metal-oxide-semiconductor transistor, which is essential for developing a truly analytical description of the low-temperature drain current kink.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346248
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  • 10
    Electronic Resource
    Electronic Resource
    Empirical relationship between the low-frequency noise spectral density and the transconductance of silicon-on-insulator n-channel metal-oxide-semiconductor transistors (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1946-1948 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, the relationship between the input-referred low-frequency noise spectral density SVG and the transconductance gm of a large number of similar silicon-on-insulator n-channel metal-oxide-semiconductor transistors is investigated. As will be shown, a large, two orders of magnitude dispersion is observed in the noise, which corresponds with a factor two variation in gm. It is demonstrated that the average SVG depends exponentially on the corresponding transconductance. This holds both for linear operation—in strong and weak inversion—and for saturation. The practical implications of these findings are discussed. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112825
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