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  • 1
    Electronic Resource
    Electronic Resource
    The synthesis of soluble, substituted silane high polymers by Wurtz coupling techniques (1991)
    Bognor Regis [u.a.] : Wiley-Blackwell
    Journal of Polymer Science Part A: Polymer Chemistry 29 (1991), S. 813-824 
    Details
    ISSN: 0887-624X
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: The Wurtz-type coupling of a number of representative classes of substituted dichlorosilane monomers was investigated in considerable detail. Low temperature polymerization techniques, including ultrasonic activation, were also studied. Similarly, the effect of dipolar additives on the polymerization process was examined. The conclusions drawn from these studies provide some insight into the selection of useful polymerization conditions for the conversion of various monomer types into linear high polymers.
    Additional Material: 5 Tab.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pola.1991.080290604
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  • 2
    Electronic Resource
    Electronic Resource
    Block interrupt polysilane derivatives (1990)
    Bognor Regis [u.a.] : Wiley-Blackwell
    Journal of Polymer Science Part A: Polymer Chemistry 28 (1990), S. 2665-2677 
    Details
    ISSN: 0887-624X
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: High molecular weight block interrupt polysilane derivatives have been prepared by the condensation of a number of α,ω-dichloropolysilanes with some aromatic bis silanols. In this manner, polymers containing polysilane blocks of 2, 4, or 6 catenated silicon atoms have been prepared. The materials are thermally stable and the UV spectroscopic properties mimic those of the corresponding monomers. Although these materials bleach upon irradiation in the deep UV, surprisingly, the block interrupt polysilanes behave as negative resists upon exposure to 254 nm radiation. This behavior contrasts with that of standard polysilane homopolymers which usually function in a positive lithographic mode.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pola.1990.080281007
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  • 3
    Electronic Resource
    Electronic Resource
    Block interrupt polysilane derivatives (1990)
    Bognor Regis [u.a.] : Wiley-Blackwell
    Journal of Polymer Science Part A: Polymer Chemistry 28 (1990), S. 1397-1411 
    Details
    ISSN: 0887-624X
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: High molecular weight block interrupt polysilane derivatives have been prepared by the condensation of a number of α,ω-dichloropolysilanes with some aromatic bis silanols. In this manner, polymers containing polysilane blocks of 2, 4, or 6 catenated silicon atoms have been prepared. The materials are thermally stable and the UV spectroscopic properties mimic those of the corresponding monomers. Although these materials bleach upon irradiation in the deep UV, surprisingly, the block interrupt polysilanes behave as negative resists upon exposure to 254 nm radiation. This behavior contrasts with that of standard polysilane homopolymers which usually function in a positive lithographic mode.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pola.1990.080280608
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  • 4
    Electronic Resource
    Electronic Resource
    Polymeric silicon-containing resist materials (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 95-127 
    Details
    ISSN: 1057-9257
    Keywords: Resists ; Silicon-containing ; Single layer ; Multilayer ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Silicon-containing bilayer and trilayer photoresist technology is reviewed. Multilayer resist processes of this type rely on pattern generation in a thin imaging layer followed by pattern transfer to the thick planarising underlayer by oxygen reactive ion etching (RIE). The review concentrates on materials in which the silicon is an integral part of the polymer and does not specifically address photoresists where silicon is incorporated in a post-imaging process step (Such as top-surface-imaging resists). The review is not exhaustive but emphasizes instead specific examples of representative resist chemistry.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040206
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