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  • American Institute of Physics (AIP)  (2)
  • Springer Nature
  • American Chemical Society
  • 1990-1994  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Gas source molecular beam epitaxy of FeSi2/Si(111) heterostructures (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2271-2273 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial iron disilicide thin layers have been grown on silicon by gas source molecular beam epitaxy (GSMBE) in the temperature range 450–550 °C. Fe(CO)5 and SiH4 are used as sources for the silicide growth on a heated Si(111) surface. The growth phases are characterized in situ by means of high-resolution electron energy loss spectroscopy, ultraviolet and x-ray photoelectron spectroscopies. The formation of an epitaxial metallic γ-FeSi2 layer at the interface with the silicon substrate is revealed and no complete relaxation of this strained metastable interface layer is observed, as the growth proceeds with the semiconducting equilibrium β-FeSi2 phase. The coexistence in the GSMBE grown heterostructures of the metallic (CaF2) and semiconducting (orthorhombic) FeSi2 structures is confirmed by cross-section transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109411
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  • 2
    Electronic Resource
    Electronic Resource
    Two-dimensional Shubnikov–de Haas oscillations in modulation-doped CdTe/CdMnTe quantum-well structures (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3010-3012 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For the first time clear evidence for two-dimensional Shubnikov–de Haas oscillations in modulation-doped CdTe/CdMnTe quantum-well structures is reported. The structures were grown by molecular-beam epitaxy using ZnBr2 as a novel source material for the n-type doping of II-VI epitaxial layers. From an analysis of the Shubnikov–de Haas oscillations a carrier density of 9×1011 cm−2 and an effective mass of 0.1 m0 could be deduced. Due to band filling the Fermi energy in the subbands is shifted above the conduction-band edge. This can be detected as a Stokes shift of absorption compared to photoluminescence recombination. From the Fermi energy shift the carrier concentration can be estimated, which agrees well with values determined by Hall-effect measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109173
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