ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • American Institute of Physics (AIP)  (4)
  • Nature Publishing Group (NPG)
  • 1990-1994  (4)
Collection
Publisher
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Structure and adhesion of ZrN films formed by reactive magnetron sputtering ion plating and dynamic ion mixing (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2886-2891 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ceramic coatings of zirconium nitride have been fabricated on nickel, silicon, and M2 high-speed steel by methods of reactive magnetron sputtering ion plating (RMSP) and the dynamic ion mixing (DIM). The microhardness values of ZrN film prepared by RMSP with different nitrogen partial pressure have been discussed. The scratch tests provide that the adhesion of ZrN film produced by dynamic ion mixing is better than that by reactive magnetron sputtering ion plating. Auger electron spectroscopy analysis is used to analyze the composition distribution of ZrN film prepared by DIM and indicates that there is a transitional layer between the ZrN film and substrate. Meanwhile, by cross-sectional and the plan-view transmission electron microscopy, it is observed that the interlayer of amorphous structure exists in the interface zone between ZrN film and substrate. According to the analysis of energy-dispersive x-ray analysis patterns, the composition of this amorphous region fabricated by RMSP is Ni51Zr49 (≈NiZr), as is that fabricated by DIM. (Up to now it has not been reported that the amorphous transitional layer occurs in reactive magnetron sputtering ion plating). The reason why the adhesion of coating by DIM is better than that by RMSP is not the formation of the transitional layer in ion-beam-assisted deposition but the particle bombardment effects on the bulk of the thin film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354642
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Lithographic processing of YBa2Cu3O7 thin films: Impact on electrical contacts (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 6167-6171 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silver contact pads to c-axis-oriented thin films of YBa2Cu3O7 (YBCO) were defined using three different techniques: (1) deposition through stencil masks; (2) liftoff; and (3) Ar plasma etching of in situ deposited Ag. A specific contact resistance of ρc(77 K) = 1 × 10−7 Ω cm2 was found for the in situ deposited contacts. Contacts defined with stencil masks and liftoff showed a ρc(77 K) ∼ 10−5 and ∼ 10−2 Ω cm2, respectively. Core-level photoelectron spectroscopy measurements indicate that the resist and acetone applied to the YBCO thin film during patterning do not introduce surface impurity phases in addition to those formed upon air exposure. Distinct chemical shifts originating from process-induced surface impurity phases were observed in photoelectron spectra taken on films prepared for contact definition by liftoff, i.e., exposed to the lithographic developer and deionized water. These findings correlate with the measured increase in contact resistance. Cross-sectional transmission electron microscopy images of an in situ deposited Ag contact unveil a 20–30-A(ring)-thick interface layer, in which the 12 A(ring) periodicity along the YBCO c axis vanishes. The presence of this layer could explain the absence of Josephson effects in YBCO/noble-metal/low-Tc superconductor junctions where the currents are forced to flow perpendicular to the a-b planes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350425
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Processing dependence of the interfacial microstructure of Ag contacts to YBa2Cu3O7−δ thin films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 836-838 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interfacial microstructure of three differently prepared silver contacts on c-axis oriented YBa2Cu3O7−δ (YBCO) thin films was examined using high-resolution transmission electron microscopy (HRTEM). For contacts prepared in situ by Ag sputter deposition on films maintained at elevated temperature and ex situ by Ag vapor deposition on films annealed in ultrahigh vacuum prior to metallization, regions of atomically sharp YBCO(001)/Ag interfaces were observed. In contrast, the cross-section HRTEM images of contacts prepared by in situ Ag deposition at room temperature reveal an amorphous interfacial zone, typically 20 A(ring) thick. Scattered Y2O3 precipitates are found at the YBCO surface of all three contacts. The data suggest that intrinsic reactions between Ag and YBCO(001) are negligible, and that the amorphous interface layer for in situ contacts to cold films must be ascribed to reactions with gaseous impurities in the sputter chamber ambient. In conclusion, we strongly emphasize the importance of using ultrahigh purity process gases in order to avoid formation of a resistive interfacial barrier.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109870
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy study of Ag contacts to a- and c-axis oriented YBa2Cu3O7 thin films (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 498-500 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interface atomic structure of in situ sputter deposited silver contacts to a- and c-axis oriented thin films of YBa2Cu3O7 (YBCO) was investigated with cross-section transmission electron microscopy (TEM). A structurally disordered interface layer, approximately 25 A(ring) thick, was found for Ag contacts to c-axis oriented films. Electron diffraction analysis provides clear evidence for loss of the 11.7 A(ring) lattice periodicity along the YBCO c-axis in this zone. No such disordered interface layer could be identified in TEM images of Ag contacts to a-axis oriented films. These findings may have important bearing on fabrication of high Tc proximity coupled superconductor/normal metal/superconductor Josephson devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106612
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...