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  • Institute of Physics  (175)
  • American Institute of Physics (AIP)  (23)
  • 2010-2014  (116)
  • 1990-1994  (82)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4265-4267 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of a Bi surfactant layer on the growth of Ge on Si(100) substrates was investigated by using a medium-energy ion-backscattering spectrometer and a transmission electron microscope. A monolayer of Bi predeposited on the Si substrates suppressed islanding in the subsequent molecular-beam-epitaxial growth of Ge. The Bi atoms moved on top of the Ge film during the growth process.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1924-1928 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oligosilanes bridging microgaps between silicon microcrystallites were investigated as a possible model for the origin of the intense visible photoluminescence of porous silicon by means of the semiempirical molecular-orbital method. The incomplete structural relaxation of the oligosilane bridge after the photoexcitation was found to be a key factor to give the visible photoluminescence. The calculated structure-insensitive photoexcitation energy around 3.3 eV and the structure-sensitive light emission energy around 1.2–2.1 eV are consistent with the experimental evidence. The sufficient transition probabilities between the concerning electronic states support the high efficiency of photoluminescence. Durabiliy of the structure under the photoexcitation was also suggested. The model is valid even if the silicon microcrystallites are partly or thoroughly replaced by silicon oxides particles as is more realistic for the porous silicon exposed to the air.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1284-1287 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky characteristics of undoped AlInAs grown by metal-organic chemical-vapor deposition have been investigated. I-V characteristics and their dependence on donor concentrations in AlInAs layers were explained well by assuming the existence of an interfacial layer. The presence of oxygen atoms at the metal-AlInAs interface was revealed by Auger electron spectroscopy measurements. The oxide formation on AlInAs surface may be an inevitable result because of the high composition of aluminum atoms in AlInAs. Reduction in donor concentration in AlInAs layers is effective in minimizing the influence of the interfacial layer on barrier height lowering. Reduction in gate leakage current was successfully demonstrated for fabricated GaInAs/AlInAs high-electron-mobility transistors by reducing donor concentration in AlInAs Schottky layers.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6529-6531 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The modulation of interband-resonant light by intersubband-resonant light using an n-doped quantum well is proposed, and results of the theoretical analysis are reported. It is shown that a large change in absorption coefficient from 100 to 3160 cm−1 for interband-resonant light can be obtained by changing the intensity of intersubband-resonant light from 0 to 1 MW/cm2. Very fast modulation speed (∼ps) can be expected.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5318-5323 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A disordered superlattice, a recently proposed artificially constructed material, is fabricated and photoluminescent properties and optical absorption are investigated. Disorder is intentionally introduced into the period of the superlattice in order to enhance its photoluminescence. The photoluminescent temperature dependences and the optical absorption spectra of Al0.5Ga0.5As bulk alloy, AlAs/GaAs ordered superlattice, and AlAs/GaAs disordered superlattice are studied and compared. The optical absorption spectra suggest that localized states are created in the band tail of the AlAs/GaAs disordered superlattice. The photoluminescence spectra of the disordered superlattice are strongly dependent on the localized states, and the temperature dependence of photoluminescence intensities obeys the same relation IPL∝[1+A exp(T/T0)]−1 as that reported for amorphous semiconductors.
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 9433-9433 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 2099-2105 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Temperature dependence of the fundamental vibrational transition of CO on NaCl(100) single crystal surfaces has been measured between 4 and 55 K using Fourier-transform infrared spectroscopy. The absorption profiles at various temperatures are very nearly symmetric. At 4 K, the transition is centered at 2154.93 cm−1, and the full-width at half-maximum (FWHM) is 0.17 cm−1; at 55 K, the transition shifts to 2155.14 cm−1, and the FWHM broadens to 0.39 cm−1. The temperature-dependent frequency shift and broadening of the fundamental transition are interpreted by a vibrational phase relaxation process, in which the coupling between the stretching mode of CO and a low frequency CO-surface mode causes the dephasing of the excited state vibrational motion. The Boltzmann factor associated with the spectroscopic temperature dependence allows us to determine that the surface mode has a frequency of 40 cm−1 . We associate this mode with the frustrated translational motion of CO over the NaCl(100) surface. The observed temperature-dependent absorption band undoubtedly is a consequence of collective motions among the CO stretching vibrations within the monolayer. However, the current model, that assumes this collective motion is coupled by the CO transition dipoles, cannot explain the data. Further theoretical work will be required to understand the infrared spectroscopy of CO on NaCl(100). Below 10 K, the CO fundamental absorption becomes temperature independent. However, the limiting bandwidth and bandshape depend on the NaCl(100) crystal surface preparation. For one set of crystals, the 4 K bandshape was Lorentzian with a FWHM of 0.17 cm−1 . For another set, the 4 K bandshape was Gaussian with a FWHM of 0.11 cm−1. We believe these bandwidths, narrower than those reported previously for any adsorbate system, are limited by heterogeneities of the monolayer and/or substrate. The 0.11 cm−1 bandwidth provides a lower limit of 45 ps for the lifetime of vibrationally excited CO on NaCl(100).
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 240-241 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new resistor network for an octupole deflector combined with a stigmator is proposed. Improvement on the time constant due to the octupole's stray capacity, which is made by connecting phase-compensative capacitors parallel to the resistors, is also described.
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  • 9
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The development of an electron cyclotron resonance ion source for the heavy ion medical accelerator in Chiba (HIMAC) injector is reported. The HIMAC is a heavy ion medical accelerator for cancer therapy. The electron cyclotron resonance (ECR) ion source is expected to provide a long lifetime, easy operation, and easy maintenance for medical use. The NIRS-ECR ion source has a single closed ECR stage, and a microwave frequency of 10 GHz is applied. Under the present performance, the output electrical currents of the ions are 2500 eμA for He1+, 300 eμA for C2+, 480 eμA for Ne3+, and 110 eμA for Ar6+. Stability of the intensity is better than 2%. The transmission efficiency through a low-energy beam-transport line with an acceptance of 200 πmm mrad is more than 70%; the typical 50% and 90% emittances of the injection beam with 8 keV/u are 20 and 80 πmm mrad, respectively. These performances satisfy the requirements for radiotherapy.
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  • 10
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mechanisms of molecular beam epitaxy have been investigated for GaAs and AlAs by growing and analyzing the shapes of facet structures consisting of an (001) top surface and two (111)B side surfaces. It is found that all of the Ga flux on the three facet planes is incorporated into the film, but the growth rates on (111)B and (001) depend strongly on the As flux and are mainly determined by the diffusion of Ga ad-atoms between the two planes. In contrast, the diffusion of Al is found to be almost negligible, irrespective of the As flux. By analyzing the shape of the facet, the diffusion length, λ, of Ga on a (001) surface is estimated to be about 1 μm at 580 °C, while that of Al is about 0.02 μm. On (111)B, λ of Ga is found to be several μms. The reflectivity of diffusing Ga atoms is found to be far less than 1 for the (001)-(111)B boundary, and almost unity at facet boundaries where the (111)B side surfaces are bound by the (11¯0) side walls.
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