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  • American Institute of Physics (AIP)  (4)
  • 1990-1994  (4)
  • 1
    Electronic Resource
    Electronic Resource
    Effect of ion beam assistance on the microstructure of nonhydrogenated amorphous carbon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3121-3129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonhydrogenated diamondlike carbon films have been prepared by dual ion beam sputtering and ion-beam-assisted magnetron. The assistance parameters—ion energy, ion mass, ion flux/atom flux—have been systematically varied, and the films have been characterized by Rutherford backscattering spectroscopy, high-resolution transmission electron microscopy, electron energy loss spectroscopy, positron annihilation spectroscopy, Raman spectroscopy, and nanoindentation. It was found that the density and the degree of disorder of the films go through a maximum with ion energy, and the void concentration goes through a minimum. Microstructure analysis shows that the films are mostly sp2 bonded, with a maximum of about 16% concentration of sp3 bonding from the largest values of density. The evolution of density with ion flux and energy is consistent with a combined effect of atomic displacements in the film leading to densification, and damage buildup leading to progressive graphitization as the energy is increased. The large hardness/elastic modulus ratios obtained should lead to excellent friction properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356164
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  • 2
    Electronic Resource
    Electronic Resource
    Positron beam defect profiling of silicon epitaxial layers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3003-3006 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of silicon grown on a Si(100) substrate by molecular-beam epitaxy (MBE) and solid-phase epitaxy (SPE) have been investigated by slow positron beam analysis methods. Results of Doppler broadening measurements revealed that the S parameter of the SPE material is considerably higher than the value measured for the MBE layer, indicative of a higher concentration of open-volume defects in the former material. This was confirmed by measurements of the positronium fraction at elevated temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349329
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  • 3
    Electronic Resource
    Electronic Resource
    Structural and electrical defects in amorphous silicon probed by positrons and electrons (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5145-5152 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of pure amorphous Si, prepared by ion implantation, has been investigated by variable-energy positron annihilation spectroscopy (PAS) and lifetime measurements of optically generated free carriers. In general, PAS measurements are thought to be sensitive to vacancy-type defects while the carrier lifetime depends on the density of band-gap states (e.g., dangling bonds). The PAS measurements indicate that the density of positron-trapping defects can be reduced by thermal annealing at 500 °C. Concurrent with the removal of structural defects the density of band gap states is reduced as indicated by an increased photocarrier lifetime by a factor of 10. Some material has been implanted with H+ and annealed at a low temperature (150 °C). The hydrogen is expected to passivate electrical defects associated with strained and dangling bonds and indeed the photocarrier lifetime is increased in this material. Moreover, the PAS measurements cannot distinguish this material from 500 °C annealed amorphous Si, indicating that (some of) the electrical defects are associated with positron-trapping, and therefore possibly vacancy-type, structural defects. Finally, both methods have been used to detect small amounts of ion irradiation damage in annealed amorphous Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351993
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  • 4
    Electronic Resource
    Electronic Resource
    Positron annihilation study of low pressure chemical vapor deposited silicon nitride films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1687-1689 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Doppler S-parameter measurements have been performed on low-pressure chemical vapor deposited (LPCVD) Si3N4 samples. Annealing of the samples at 1000 °C for times up to 1 h resulted in a decrease of both the S parameter and the positron diffusion length of the silicon nitride. The diffusion length recovers after reimplantation of deuterium, but the S parameter remains low. The data are discussed using a model also applied to understand some electrical properties of the LPCVD nitride.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106218
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