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  • American Institute of Physics (AIP)  (4)
  • 1990-1994  (4)
  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high-field magnetization process in the randomly diluted metamagnet Fe1−xMgxTiO3 has been investigated in single crystal samples with x≤0.3 by using dc magnetic fields of up to 300 kOe generated by a hybrid magnet. In contrast to the sharp metamagnetic transition along the hexagonal c axis observed in FeTiO3, the diluted compounds show a considerable smearing in the transition with increasing Mg concentration. When the field is applied along the a axis at 4.2 K, a sudden jump in magnetization occurs at 235 kOe in FeTiO3, while no anomaly is observed up to 300 kOe along the a* axis which is taken to be perpendicular to both c and a axes. The jump field is lower in the diluted compounds. For the sample with x=0.185 we have also observed an anomalous increase in magnetization along the a* axis at 270 kOe.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A broadband reflectometric system in O-mode operation has been developed for the density profile determination, MHD and turbulent fluctuation measurement, and evaluation of the particle diffusion coefficient in the JT-60 tokamak. For the profile determination, full Ka-Q band frequencies of BWOs have been swept in 750 μs, in order to minimize the effect of Doppler shift due to the fluctuation of reflection layers. The heterodyne fixed-frequency reflectometer has unveiled its effectiveness to probe MHD activities, diagnosing the m=1 tearing mode oscillations. It has also enabled the observation of the dramatic suppression of edge plasma density fluctuations at the L to H-mode transition in the LHCD limiter plasma. Furthermore, the propagation delay of density pulses has been observed by different fixed-frequency channels during a series of sawteeth, from which the particle diffusion coefficient was evaluated, with a newly proposed method applicable to fully diffusive plasmas.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 3524-3527 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A broadband reflectometric system in O-mode operation has been developed for the density profile determination, MHD and turbulent fluctuation measurement, and evaluation of the particle diffusion coefficient in the JT-60 tokamak. For the profile determination, full Ka-Q band frequencies of BWOs have been swept in 750 μs, in order to minimize the effect of doppler shift due to the fluctuation of reflection layers. The heterodyne fixed-frequency reflectometer has unveiled its effectiveness to probe MHD activities, diagnosing the m=1 tearing mode oscillations. It has also enabled the observation of the dramatic suppression of edge plasma density fluctuations at the L- to H-mode transition in the LHCD limiter plasma. Furthermore, the propagation delay of density pulses has been observed by different fixed-frequency channels during a series of sawteeth, from which the particle diffusion coefficient was evaluated, with a newly proposed method applicable to fully diffusive plasmas.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1445-1447 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline silicon has been grown by ArF excimer laser (193 nm) induced dissociation of Si2H6 adsorbed on a quartz substrate cooled to −69 °C. Silicon atomic layer growth has also been achieved by controlling the Si2H6 adsorbed layer thickness. It is found that the chemical reactivity of the first one monolayer of Si2H6 in contact with the growing Si surface is extremely high compared to that of the second or third Si2H6 layer. The effective photodissociation reaction rate at 193 nm for the first Si2H6 layer is estimated to be more than 40 times faster than that of an isolated Si2H6 molecule. Such high reactivity of the first monolayer is a possible mechanism of the self-limiting process in the atomic layer growth.
    Type of Medium: Electronic Resource
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