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  • American Institute of Physics (AIP)  (2)
  • Nature Publishing Group
  • 1990-1994  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 150-157 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pairing of solute atoms in solution-hardened binary and ternary face-centered cubic (fcc) binary and ternary Cu alloys has been investigated with the EXAFS (extended x-ray-absorption fine structure) technique using synchrotron radiation. Two binary Cu alloys, one containing 6 at. % Ni and the other 6 at. % Pd and a ternary Cu alloy containing 3 at. % Ni and 3 at. % Pd alloy were studied. The solute concentration in each system was chosen below that (8.33 at. %) required for finding one solute-solute pair in the first coordination sphere in the fcc structure. Detailed simulations of the experimental EXAFS signal arising from the first coordination shell of the Ni and Pd solute atoms in these alloys give the following results: (i) In both binary and ternary alloys, Ni is coordinated by 12 Cu host atoms at a distance equal to sum of the Goldschmidt radii. There is little evidence for Ni-Ni pairing. (ii) On the other hand, Pd-Pd pairing is found in both the binary and ternary systems. In addition, chemical interaction with the Cu matrix is evident from the Pd-Cu separation of 2.60 A(ring) which is ∼0.05 A(ring) shorter than the sum of their Goldschmidt radii. (iii) Finally, there is no pairing of Ni-Pd solute atoms in the ternary alloy.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use, transportation, and storage of the hazardous gas, arsine, raise serious safety issues. Consequently, there is considerable interest in the generation of arsine on demand from less hazardous substances. We report the first use of in situ generated arsine for III-V epitaxy. The gas has been generated electrochemically at an arsenic cathode in an aqueous electrolyte and used to supply a hydride vapor phase epitaxy reactor. InGaAs/InP test structures were grown on InP substrates and were similar to comparison structures grown using tank arsine. Recessed-gate enhanced Schottky metal-semiconductor field-effect transistors were fabricated and exhibited well-behaved current-voltage characteristics.
    Type of Medium: Electronic Resource
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